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Applied Physics Letters / Volume 93 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 93, 111107 (2008); http://dx.doi.org/10.1063/1.2980451 (3 pages)

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David

Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, United Kingdom

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(Received 8 August 2008; accepted 12 August 2008; published online 15 September 2008)

An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm−1 with useful gain observed at biases below 10 V.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

avalanche photodiodes, electron impact ionisation, III-V semiconductors, indium compounds, p-i-n photodiodes, semiconductor diodes

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

  • 85.30.Kk

    Junction diodes

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2980451

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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