APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 93 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 93, 111109 (2008); http://dx.doi.org/10.1063/1.2985900 (3 pages)

Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

S. G. Li1, Q. Gong1, Y. F. Lao1, K. He1, J. Li1, Y. G. Zhang1, S. L. Feng1, and H. L. Wang2

1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China
2College of Physics and Engineering, Qufu Normal University, Qufu 273165, People’s Republic of China

View MapView Map

(Received 22 July 2008; accepted 28 August 2008; published online 18 September 2008)

We report on the InAs quantum dots (QDs) laser in the 1.55 μm wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70 °C, with characteristic temperature of 69 K. High internal quantum efficiency (56%) and low infinite length threshold current density (128 A/cm2 per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605 μm can be covered by varying the laser cavity length.

© 2008 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

current density, III-V semiconductors, indium compounds, molecular beam epitaxial growth, quantum dot lasers, waveguide lasers

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.By

    Design of specific laser systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2985900

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, Appl. Phys. Lett. 73, 2564 (1998)APPLAB000073000018002564000001.

    R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers, Appl. Phys. Lett. 67, 3795 (1995)APPLAB000067000025003795000001.

    V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. Yu. Egorov, A. V. Lunev, B. V. Volovik, I. L. Krestnikov, Y. G. Musikhin, N. A. Bert, P. S. Kopev, Zh. I. Alferov, N. N. Ledentsov, and D. Bimberg, Appl. Phys. Lett. 74, 2815 (1999)APPLAB000074000019002815000001.

    C. Paranthoen, N. Bertru, O. Dehaese, A. Le Corre, S. Loualiche, B. Lambert, and G. Patriarche, Appl. Phys. Lett. 78, 1751 (2001)APPLAB000078000012001751000001.

    Q. Gong, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 84, 275 (2004)APPLAB000084000002000275000001.

    Q. Gong, R. Nötzel, P. J. van Veldhoven, T. J. Eijkemans, and J. H. Wolter, Appl. Phys. Lett. 85, 1404 (2004)APPLAB000085000008001404000001.

    J. W. Jang, S. H. Ryun, S. H. Lee, I. C. Lee, W. G. Jeong, R. Stevenson, P. Daniel Dapkus, N. J. Kim, M. S. Hwang, and D. Lee, Appl. Phys. Lett. 85, 3675 (2004)APPLAB000085000017003675000001.

    S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and J. H. Wolter, Appl. Phys. Lett. 89, 073115 (2006)APPLAB000089000007073115000001.

    H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 78, 267 (2001)APPLAB000078000003000267000001.

    J. F. Carlin, A. V. Syrbu, C. A. Berseth, J. Behrend, A. Rudra, and E. Kapon, Appl. Phys. Lett. 71, 13 (1997)APPLAB000071000001000013000001.


For access to citing articles, you need to log in.


Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Room temperature continuous-wave operation of InAs/InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy
  2. Continuous terahertz-wave generation using a monolithically integrated horn antenna
  3. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
  4. Waveguiding and nonlinear optical properties of three-dimensional waveguides in LiTaO3 written by high-repetition rate ultrafast laser
  5. Effects of laser pulse duration on extreme ultraviolet spectra from double optical gating
Go to AIP Home
Copyright © American Institute of Physics
close