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Applied Physics Letters / Volume 93 / Issue 11 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 93, 111111 (2008); http://dx.doi.org/10.1063/1.2986527 (3 pages)

Characteristics of GaN-based photonic crystal surface emitting lasers

Tien-chang Lu, Shih-Wei Chen, Tsung-Ting Kao, and Tzu-Wei Liu

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 30050, Taiwan

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(Received 1 April 2008; accepted 28 August 2008; published online 18 September 2008)

Characteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of 1.6 Å and shows a threshold energy density about 2.7 mJ/cm2 under the optical pumping at room temperature. The lasing wavelength emitted from PCSELs with different lattice constants occurs at the calculated band edges showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to Γ, K, and M directions in the K-space. Furthermore, the PCSEL also shows a spontaneous emission coupling efficiency β of about 5×10−3 and a characteristic temperature of 148 K.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, optical pumping, photonic crystals, semiconductor quantum wells, spontaneous emission, surface emitting lasers, wide band gap semiconductors

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.55.Tv

    Photonic crystal lasers and coherent effects

  • 42.60.By

    Design of specific laser systems

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2986527

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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