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Appl. Phys. Lett. 93, 111115 (2008); http://dx.doi.org/10.1063/1.2987999 (3 pages)

Near-infrared absorption of germanium thin films on silicon

V. Sorianello1, A. Perna1, L. Colace1, G. Assanto1, H. C. Luan2, and L. C. Kimerling2

1NooEL-Nonlinear Optics and OptoElectronics Laboratory, University “Roma Tre”, Via della Vasca Navale 84, 00146 Rome, Italy
2Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, USA

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(Received 21 July 2008; accepted 2 September 2008; published online 18 September 2008)

Using differential optical absorption spectroscopy of germanium thin films epitaxially grown on silicon, we accurately evaluate the near-infrared absorption versus wavelength and temperature. The results allow for optimized design and realization of Ge-on-Si photodetectors.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 78.66.Db

    Elemental semiconductors and insulators

  • 78.30.Am

    Elemental semiconductors and insulators

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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    W. C. Dash and R. Newman, Phys. Rev. 99, 1151 (1955).

    Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. C. Luan, and L. C. Kimerling, Appl. Phys. Lett. 82, 2044 (2003)APPLAB000082000013002044000001.

    Y. Ishikawa, K. Wada, J. Liu, D. D. Cannon, H. C. Luan, J. Michel, and L. C. Kimerling, J. Appl. Phys. 98, 013501 (2005)JAPIAU000098000001013501000001.

    T. P. Pearsall, Appl. Phys. Lett. 60, 1712 (1992)APPLAB000060000014001712000001.

    H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, Appl. Phys. Lett. 75, 2909 (1999)APPLAB000075000019002909000001.


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