High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching

Verma, V. B.; Coleman, J. J.

doi:doi:10.1063/1.2981207

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Projecting deep-subwavelength patterns from diffraction-limited masks using metal-dielectric multilayers

We utilize a metal-dielectric multilayer structure to generate deep-subwavelength one-dimensional and two-dimensional periodic patterns with diffraction-limited masks. The working wavelength and the pattern are set by the flexible design of the multilayer structure. This scheme is suitable to be applied to deep-subwavelength photolithography. As an example, we numerically demonstrate pattern periods down to 50 nm under 405 nm light illumination.

Contrasting characteristics of linear-field and cross-field atmospheric plasma jets

This letter reports an experimental study of two types of atmospheric pressure plasma jets in terms of their fundamental properties and their efficiency in etching polymeric materials. The first plasma jet has a cross-field configuration with its electric field perpendicular to its gas flow field, whereas the second is a linear-field device having parallel electric and flow fields. The linear-field jet is shown to drive electron transportation to the downstream application region, thus facilita...

We present a quantum dot (QD) fabrication method which allows for the definition of the explicit location and size of an individual QD. We have obtained high optical quality, high density QD arrays utilizing hydrogen silsesquioxane, a negative tone electron beam resist, as a wet etch mask for an underlying quantum well. Linewidths as small as 24 meV from a large ensemble of QDs have been demonstrated in photoluminescence measurements at 77 K. The magnitude of the experimentally obtained blueshift due to quantum confinement effects is found to be consistent with that predicted by theory.

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KEYWORDS and PACS

Keywords

aluminium compounds, electron beam lithography, etching, gallium arsenide, III-V semiconductors, nanotechnology, photoluminescence, semiconductor quantum dots, spectral line shift

PACS

81.16.Nd

Micro- and nanolithography
81.65.Cf

Surface cleaning, etching, patterning
78.67.Hc

Quantum dots
78.55.Cr

III-V semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2981207

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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