Contrasting characteristics of linear-field and cross-field atmospheric plasma jets

Walsh, J. L.; Kong, M. G.

doi:doi:10.1063/1.2982497

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High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching

We present a quantum dot (QD) fabrication method which allows for the definition of the explicit location and size of an individual QD. We have obtained high optical quality, high density QD arrays utilizing hydrogen silsesquioxane, a negative tone electron beam resist, as a wet etch mask for an underlying quantum well. Linewidths as small as 24 meV from a large ensemble of QDs have been demonstrated in photoluminescence measurements at 77 K. The magnitude of the experimentally obtained blueshi...

Measurement of electron density by Stark broadening in an ablative pulsed plasma thruster

Electron density was measured by Stark broadening in an ablative pulsed plasma thruster. The asymmetrical deconvolution is used to obtain Stark broadening. The result shows that the electron density in the discharge channel is 2.534×1022 m−3 when the discharge energy is 5 J and the measured electron temperature is 18 000 K, and it is in excellent agreement with other experimental and theoretical data. The electron density in the discharge channel increases very minimally with increasing dischar...

This letter reports an experimental study of two types of atmospheric pressure plasma jets in terms of their fundamental properties and their efficiency in etching polymeric materials. The first plasma jet has a cross-field configuration with its electric field perpendicular to its gas flow field, whereas the second is a linear-field device having parallel electric and flow fields. The linear-field jet is shown to drive electron transportation to the downstream application region, thus facilitating more active plasma chemistry there. This is responsible for its etching rate of polyamide films being 13-fold that of its cross-field counterpart.

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KEYWORDS and PACS

Keywords

plasma chemistry, plasma flow, plasma jets, plasma transport processes, polymer films, sputter etching

PACS

52.77.Bn

Etching and cleaning
81.65.Cf

Surface cleaning, etching, patterning
82.33.Xj

Plasma reactions (including flowing afterglow and electric discharges)
52.25.Fi

Transport properties
52.75.-d

Plasma devices
52.30.-q

Plasma dynamics and flow

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2982497

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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