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Appl. Phys. Lett. 93, 111901 (2008); http://dx.doi.org/10.1063/1.2980583 (3 pages)

Structural and electronic properties of crystalline InGaO3(ZnO)m

W.-J. Lee, E.-A. Choi, J. Bang, B. Ryu, and K. J. Chang

Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea

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(Received 27 June 2008; accepted 29 July 2008; published online 15 September 2008)

Based on theoretical calculations, we find that the crystal structure of InGaO3(ZnO)m consists of an alternating stack of a wurtzite (Ga/Zn)–O block and an In–O octahedral layer. In the (Ga/Zn)–O block, the Ga atoms favor a modulated boundary structure against a flat boundary structure. The band spectrum shows that hole carriers are spatially confined whereas electrons move more freely through the whole crystal. The characteristics of a superlattice structure appears especially in the flat boundary structure. The band gap decreases with m due to the reduction in the quantum confinement effect.

© 2008 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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