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Appl. Phys. Lett. 93, 111903 (2008); http://dx.doi.org/10.1063/1.2983656 (3 pages)

Nature of quasi-LO phonon in ZnO

Y. Y. Tay1,2, T. T. Tan1, M. H. Liang2, F. Boey2, and S. Li1

1School of Materials Science and Engineering, The University of New South Wales, New South Wales 2052, Australia
2School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore

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(Received 26 June 2008; accepted 24 August 2008; published online 16 September 2008)

The quasi-LO phonon mode is related to the specific defects that strongly affect the photonic properties of materials such as zinc oxide (ZnO). The line shapes of the quasi-LO phonon of ZnO annealed in different environments have been investigated. The experimental results show that this mode has the greatest Raman shift to lower wavenumber for the ZnO annealed in ambient atmosphere, suggesting that it has the largest concentration of defects that may be related to its green emission.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 63.20.D-

    Phonon states and bands, normal modes, and phonon dispersion

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 78.20.-e

    Optical properties of bulk materials and thin films

  • 78.30.Fs

    III-V and II-VI semiconductors

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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