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Applied Physics Letters / Volume 93 / Issue 11 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 93, 111904 (2008); http://dx.doi.org/10.1063/1.2985816 (3 pages)

Reduction of stacking fault density in m-plane GaN grown on SiC

Y. S. Cho1, Q. Sun1, I.-H. Lee1, T.-S. Ko1, C. D. Yerino1, J. Han1, B. H. Kong2, H. K. Cho2, and S. Wang3

1Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
2School of Advanced Materials Sci. and Eng., Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Republic of Korea
3Fairfield Crystal Technology, LLC, New Milford, Connecticut 06776, USA

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(Received 7 August 2008; accepted 28 August 2008; published online 16 September 2008)

We report the reduction in basal-plane stacking faults (BSFs) in m-plane GaN grown on m-plane SiC. The origin of BSFs is linked to heteronucleation of m-plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm−1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m-plane GaN heteroepitaxial layers, is greatly reduced. A possible mechanism of BSF generation, and the demonstration of improved InGaN/GaN quantum well emission are presented.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

gallium compounds, III-V semiconductors, indium compounds, nucleation, photoluminescence, semiconductor epitaxial layers, semiconductor quantum wells, stacking faults, transmission electron microscopy, wide band gap semiconductors, X-ray diffraction, X-ray scattering

PACS

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 61.72.Dd

    Experimental determination of defects by diffraction and scattering

  • 78.67.De

    Quantum wells

  • 78.55.Cr

    III-V semiconductors

  • 61.72.Nn

    Stacking faults and other planar or extended defects

  • 68.37.Og

    High-resolution transmission electron microscopy (HRTEM)

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2985816

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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