Microstructural properties of phosphorus-doped p-type ZnO grown by radio-frequency magnetron sputtering

Oh, Min-Suk; Hwang, Dae-Kue; Choi, Yong-Seok; Kang, Jang-Won; Park, Seong-Ju; Hwang, Chi-Sun; Cho, Kyoung Ik

doi:doi:10.1063/1.2936962

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Reduction of stacking fault density in m-plane GaN grown on SiC

We report the reduction in basal-plane stacking faults (BSFs) in m-plane GaN grown on m-plane SiC. The origin of BSFs is linked to heteronucleation of m-plane GaN and the presence of N-face basal-plane sidewalls of three-dimensional islands. Graded AlGaN layers help to alleviate mismatched nucleation and the generation of BSFs. Transmission electron microscopy shows that the density of BSFs is decreased to the low 105 cm−1. Anisotropy in on-axis x-ray rocking curves, a salient feature in m-plan...

Interband and intersubband optical characterization of semipolar (112)-oriented GaN/AlN multiple-quantum-well structures

We report on semipolar GaN/AlN multiple-quantum-well structures grown on m-plane sapphire by plasma-assisted molecular-beam epitaxy. Optical investigation confirms a significant reduction in the quantum-confined Stark effect, in agreement with theoretical calculations, which predict an internal electric field between 0.6 and −0.55 MV/cm in the quantum wells, depending on the strain state. With respect to polar materials, the reduction in the internal electric field results in a substantial reds...

Phosphorus (P)-doped ZnO thin films were grown by radio-frequency magnetron sputtering to study the microstructural properties of p-type ZnO. As-grown P-doped ZnO, a semi-insulator, was converted to p-type ZnO after being annealed at 800 °C in an N₂ ambient. X-ray diffraction, secondary-ion-mass spectrometry, and Hall effect measurements indicated that P₂O₅ phases in as-grown P-doped ZnO disappeared after thermal annealing to form a substitutional P at an O lattice site, which acts as an acceptor in P-doped ZnO. Transmission electron microscopy showed that the formation of stacking faults was facilitated to release the strain in P-doped ZnO during post-thermal annealing.

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KEYWORDS and PACS

Keywords

annealing, crystal microstructure, Hall effect, II-VI semiconductors, phosphorus, secondary ion emission, semiconductor growth, semiconductor thin films, sputter deposition, stacking faults, transmission electron microscopy, wide band gap semiconductors, X-ray diffraction, zinc compounds

PACS

81.15.Cd

Deposition by sputtering
61.72.Cc

Kinetics of defect formation and annealing
68.55.ag

Semiconductors
73.61.Ga

II-VI semiconductors
72.20.My

Galvanomagnetic and other magnetotransport effects

ARTICLE DATA

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http://dx.doi.org/10.1063/1.2936962

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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