In situ stress evolution during magnetron sputtering of transition metal nitride thin films

Abadias, G.; Guerin, Ph.

doi:doi:10.1063/1.2985814

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Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

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KEYWORDS and PACS

Keywords

compressive strength, sputter deposition, thin films, titanium compounds, transition metals, voids (solid)

PACS

81.15.Cd

Deposition by sputtering
68.37.-d

Microscopy of surfaces, interfaces, and thin films
61.72.Qq

Microscopic defects (voids, inclusions, etc.)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.2985814

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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