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Applied Physics Letters / Volume 93 / Issue 11 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 93, 111910 (2008); doi:10.1063/1.2986448 (3 pages)

In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films

Jeremy D. Acord1, Ian C. Manning1, Xiaojun Weng1, David W. Snyder2, and Joan M. Redwing3

1Department of Materials Science and Engineering and Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2Electro-Optics Center, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
3Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennyslvania 16802, USA

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(Received 20 July 2008; accepted 22 August 2008; published online 18 September 2008)

The effect of Si-doping on the stress and microstructure of AlxGa1−xN (x ≈ 0.39–0.45) films grown by metalorganic chemical vapor deposition on SiC substrates was investigated. In situ measurements revealed a compressive-to-tensile transition of the stress state at the film surface upon the addition of SiH4 during growth, which correlated with a change in the angle of inclination of threading dislocations in the film. The magnitude of the in situ measured stress gradient was comparable to that predicted by the dislocation effective climb model, suggesting that dislocation inclination is the dominant mechanism responsible for tensile stress generation in the films.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, dislocation climb, gallium compounds, III-V semiconductors, MOCVD, semiconductor doping, semiconductor thin films, silicon

PACS

  • 68.55.ag

    Semiconductors

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

  • 61.72.uj

    III-V and II-VI semiconductors

  • 61.72.Lk

    Linear defects: dislocations, disclinations

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.2986448

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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