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Applied Physics Letters / Volume 93 / Issue 11 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 93, 111911 (2008); http://dx.doi.org/10.1063/1.2987423 (3 pages)

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

D. Cherns1, L. Meshi1, I. Griffiths1, S. Khongphetsak1, S. V. Novikov2, N. R. S. Farley2, R. P. Campion2, and C. T. Foxon2

1Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
2Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

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(Received 23 July 2008; accepted 27 August 2008; published online 18 September 2008)

Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on {10math0} planes and bounded by opposite partial screw dislocations with Burgers vectors of 1/2〈0001〉. The faults nucleate, as dislocation half-loops, from points close to the GaN/(0001)sapphire interface. It is proposed that the spiral growth of the partial atomic step joining the emerging dislocations controls nanorod growth and accounts for the growth surface morphology. The significance of these defects for nanorod growth and applications is discussed.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

dislocations, gallium compounds, III-V semiconductors, molecular beam epitaxial growth, nanotechnology, semiconductor growth, surface morphology, transmission electron microscopy

PACS

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.47.Fg

    Semiconductor surfaces

  • 81.05.Ea

    III-V semiconductors

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 81.07.-b

    Nanoscale materials and structures: fabrication and characterization

  • 61.72.Ff

    Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2987423

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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