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Applied Physics Letters / Volume 93 / Issue 13 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 93, 132102 (2008); http://dx.doi.org/10.1063/1.2991448 (3 pages)

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

S. Dasgupta1, S. Birner1, C. Knaak1, M. Bichler1, A. Fontcuberta i Morral1, G. Abstreiter1, and M. Grayson2

1Walter Schottky Institut, Technische Universität München, Garching D-85748, Germany
2Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA and Walter Schottky Institut, Technische Universität München, Garching D-85748, Germany

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(Received 23 July 2008; accepted 9 September 2008; published online 29 September 2008)

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Å wide QW. Our calculations of strain and quantum confinement for these samples predict single anisotropic-mass valley occupancy for well widths W greater than 53 Å. Below this, double-valley occupation is predicted such that the longitudinal mass axes are collinear. We observed mobility anisotropy in the electronic transport along the crystallographic directions in the ratio of 2.8, attributed to the mass anisotropy as well as anisotropic scattering of the electrons in the X-valley of AlAs.

© 2008 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electron mobility, III-V semiconductors, semiconductor quantum wells

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.2991448

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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