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29 Sep 2008

Volume 93, Issue 13, Articles (13xxxx)

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Appl. Phys. Lett. 93, 132101 (2008); http://dx.doi.org/10.1063/1.2988720 (3 pages)

Yueh-Nan Chen and Lukas Gilz
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Polarization switching using single-walled carbon nanotubes grown on epitaxial ferroelectric thin films

P. Paruch, A.-B. Posadas, M. Dawber, C. H. Ahn, and P. L. McEuen

Appl. Phys. Lett. 93, 132901 (2008); http://dx.doi.org/10.1063/1.2985815 (3 pages) | Cited 9 times

Online Publication Date: 29 September 2008

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We have directly grown single-walled carbon nanotubes on epitaxial BaTiO3 thin films, fabricating prototype carbon nanotube-ferroelectric devices. We demonstrate polarization switching using the nanotube as a local electric field source and compare the results to switching with an atomic force microscopy tip. The observed variation of domain growth rates in the two cases agrees with the changes in electric field intensity at the ferroelectric surface.
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81.07.De Nanotubes
77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization

High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer

Hyoung-Sub Kim, Injo Ok, Feng Zhu, M. Zhang, S. Park, J. Yum, H. Zhao, Prashant Majhi, Domingo I. Garcia-Gutierrez, Niti Goel, W. Tsai, C. K. Gaspe, M. B. Santos, and Jack C. Lee

Appl. Phys. Lett. 93, 132902 (2008); http://dx.doi.org/10.1063/1.2990645 (3 pages) | Cited 3 times

Online Publication Date: 29 September 2008

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The electrical characteristics of HfO2-based n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) and metal-oxide-semiconductor capacitors (MOSCAPs) on high indium content In0.53Ga0.47As channel layers are presented. N-channel MOSFETs with a germanium (Ge) interfacial passivation layer (IPL) show maximum mobility 3186 cm2/V s from split capacitance-voltage (C-V) method and the normalized drain current (to the channel length of 1 μm) of 753 mA/mm at Vg = Vth+2 V and Vd = 2 V. On the contrary, MOSFETs without a Ge IPL or with high temperature post-metal annealing (PMA) exhibit inferior characteristics. MOSCAPs on n-type In0.53Ga0.47As layers demonstrate excellent C-V characteristics including low C-V frequency dispersion and low dielectric leakage current.
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85.30.Tv Field effect devices
84.32.Tt Capacitors

Hardening of the ferroelectric soft mode in SrTiO3 thin films

Ikufumi Katayama, Hiroshi Shimosato, Dhanvir Singh Rana, Iwao Kawayama, Masayoshi Tonouchi, and Masaaki Ashida

Appl. Phys. Lett. 93, 132903 (2008); http://dx.doi.org/10.1063/1.2991442 (3 pages) | Cited 12 times

Online Publication Date: 30 September 2008

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We have studied the origin of soft-mode hardening in SrTiO3 thin films using broadband terahertz time-domain spectroscopy. We measured the dielectric dispersions in the terahertz region of as-deposited, O2 annealed, and high-temperature annealed SrTiO3 thin films deposited on MgO and La0.3Sr0.7Al0.65Ta0.35O3 substrates. The results show that the ferroelectric soft mode softens dramatically by the high-temperature annealing. We also measure x-ray diffractions and atomic force microscope images and conclude that the hardening of the ferroelectric soft mode in the thin films is determined by the grain size of each crystalline domain which is enlarged by the high-temperature annealing due to remelting.
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77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets

L. W. Chang, M. McMillen, F. D. Morrison, J. F. Scott, and J. M. Gregg

Appl. Phys. Lett. 93, 132904 (2008); http://dx.doi.org/10.1063/1.2990760 (3 pages) | Cited 19 times

Online Publication Date: 1 October 2008

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Thin lamellae were cut from bulk single crystal BaTiO3 using a focused ion beam microscope. They were then removed and transferred onto single crystal MgO substrates, so that their functional properties could be measured independent of the original host bulk ferroelectric. The temperature dependence of the capacitance of these isolated single crystal films was found to be strongly bulklike, demonstrating a sharp Curie anomaly, as well as Curie–Weiss behavior. In addition, the sudden change in the remanent polarization as a function of temperature at TC was characteristic of a first order phase change. The work represents a dramatic improvement on that previously published by Saad et al. [J. Phys.: Condens. Matter 16, L451 (2004) ], as critical shortcomings in the original specimen geometry, involving potential signal contributions from bulk BaTiO3, have now been obviated. That the functional properties of single crystal thin film lamellae are comparable to bulk, and not like those of conventionally deposited heterogeneous thin film systems, has therefore been confirmed.
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77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point

Temperature characteristics and development of field-induced phase transition in relaxor ferroelectric Pb(Mg1/3Nb2/3)0.87Ti0.13O3 ceramics

J. Peräntie, J. Hagberg, A. Uusimäki, and H. Jantunen

Appl. Phys. Lett. 93, 132905 (2008); http://dx.doi.org/10.1063/1.2993345 (3 pages) | Cited 7 times

Online Publication Date: 1 October 2008

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Ferroelectric phase inducing threshold electric field Eth and its temperature dependence were determined in relaxor ferroelectric 0.87Pb(Mg1/3Nb2/3)O3−0.13PbTiO3 (PMN–13PT) ceramics by measuring dielectric response on a dc field pulse. Evolution of the induced ferroelectricity was observed by means of polarization measurements. An inducing threshold field was found to have a minimum of Eth,min = 1.55 kV/cm at T = −5 °C. In contrast to pure PMN, which shows a minimum threshold field near the depolarization temperature, the temperature of the minimum threshold field differs by an amount of ΔT = 23 °C from the depolarization temperature Tdp = 18 °C in PMN-13PT.
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77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Ej Polarization and depolarization

Observation of magnetoelectric coupling in Bi0.7Dy0.3FeO3 thin films at room temperature

V. R. Palkar and K. Prashanthi

Appl. Phys. Lett. 93, 132906 (2008); http://dx.doi.org/10.1063/1.2994692 (3 pages) | Cited 16 times

Online Publication Date: 2 October 2008

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Spatial coexistence of ferroelectric and magnetic domains in micrometer scale is confirmed by multimode scanning probe microscopy of pulsed laser deposited Bi0.7Dy0.3FeO3 thin films. The observed change in ferroelectric polarization with applied magnetic field proves the coupling between magnetic and ferroelectric order parameters. Moreover, the alignment of magnetic domains with externally applied electric field further confirms the presence of coupling in this system. Remarkably, the effect persists even after the electric field is removed, thereby implying an electric field induced magnetic hysteresis phenomenon in the magnetic domain structure. The results suggest an in-principle usability of this system for multifunctional applications.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Bandgap engineering of tunnel oxide with multistacked layers of Al2O3/HfO2/SiO2 for Au-nanocrystal memory application

Yun-Shan Lo, Ke-Chih Liu, Jyun-Yi Wu, Cheng-Hao Hou, and Tai-Bor Wu

Appl. Phys. Lett. 93, 132907 (2008); http://dx.doi.org/10.1063/1.2995862 (3 pages) | Cited 14 times

Online Publication Date: 2 October 2008

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Charge storage characteristics of metal-oxide-semiconductor (MOS) structure containing Au nanocrystals on tunnel oxide composed of triply stacked SiO2, HfO2, and Al2O3 layers were studied. Significantly high charge injection and detrapping efficiency for program and erase operations along with a satisfactory long-term charge retention were obtained from the above MOS structure. It is attributed to the bandgap engineering of tunnel oxide with a multistacked concave barrier, from which the effective thickness of the tunneling barrier can be greatly reduced under a moderate bias, while a thick and high barrier is retained for charge retention.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
84.30.Sk Pulse and digital circuits
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films

Effects of unequally biaxial misfit strains on polarization phase diagrams in embedded ferroelectric thin layers: Phase field simulations

Ping-Li Liu, Jie Wang, Tong-Yi Zhang, Yulan Li, Long-Qing Chen, Xing-Qiao Ma, Wu-Yang Chu, and Li-Jie Qiao

Appl. Phys. Lett. 93, 132908 (2008); http://dx.doi.org/10.1063/1.2975161 (3 pages) | Cited 2 times

Online Publication Date: 3 October 2008

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Phase field simulations were conducted to investigate the effects of unequally biaxial misfit strains on domain stability diagrams and equilibrium domain structures in an epitaxial ferroelectric PbTiO3 thin layer, which is sandwiched in a nonferroelectric medium. The simulations reveal a multidomain structure in the layer and allow constructing “misfit strain-misfit strain” and “temperature-misfit strain” phase diagrams. It is found that unequally biaxial misfit strains may lead to the presence of a single tetragonal variant, either a-domains or b-domains, which do not exist if the misfit strains are equally biaxial.
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77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
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