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6 Oct 2008

Volume 93, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 141901 (2008); http://dx.doi.org/10.1063/1.2990662 (3 pages)

J. H. Han, K. B. Kim, S. Yi, J. M. Park, S. W. Sohn, T. E. Kim, D. H. Kim, J. Das, and J. Eckert
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Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite

Brian J. Rodriguez, Y. H. Chu, R. Ramesh, and Sergei V. Kalinin

Appl. Phys. Lett. 93, 142901 (2008); http://dx.doi.org/10.1063/1.2993327 (3 pages) | Cited 8 times

Online Publication Date: 6 October 2008

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The ferroelectric polarization switching behavior at the 24° (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Piezoelectric behavior of SrRuO3 buffered lanthanum modified bismuth ferrite thin films grown by chemical method

A. Z. Simões, A. H. M. Gonzalez, E. C. Aguiar, C. S. Riccardi, E. Longo, and J. A. Varela

Appl. Phys. Lett. 93, 142902 (2008); http://dx.doi.org/10.1063/1.2979692 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2008

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Lanthanum modified bismuth ferrite thin film (BLFO) of pure perovskite phase was deposited on SrRuO3-buffered Pt/TiO2/SiO2/Si (100) substrates by soft chemical method. (111)-preferred oriented BLFO film was coherently grown at a temperature of 500 °C. The crystal structure of the film was characterized by using x-ray diffraction. The spontaneous polarization of the film was 25 μC/cm2. The film has a piezoelectric coefficient d33 equal to 85 pm/V and a weak pulse width dependence indicating intrinsic ferroelectricity. Retention measurement showed no decay of polarization while piezoelectric response was greatly improved by the conductor electrode.
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77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects
61.66.Fn Inorganic compounds
75.50.Gg Ferrimagnetics
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
68.55.at Other materials

Antiferroelectric dielectric relaxation processes and the interlayer interaction in antiferroelectric liquid crystals

Jang-Kun Song, U. Manna, A. Fukuda, and J. K. Vij

Appl. Phys. Lett. 93, 142903 (2008); http://dx.doi.org/10.1063/1.2977871 (3 pages) | Cited 4 times

Online Publication Date: 7 October 2008

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Antiphase relaxation process of antiferroelectric phase is investigated in binary mixtures of antiferroelectric and ferroelectric liquid crystalline compounds. It is found that the frequency of the antiphase mode ranges from 2 to 4 MHz, being one of the fastest collective processes reported so far. This can be exploited in a photonic switch with a submicrosecond response time. However, the frequency of the antiphase mode decreases by the mixing ratio of the ferroelectric compound. The decrease in the frequency is shown to be due to a reduction in the elastic constant in between the adjacent layers.
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77.80.-e Ferroelectricity and antiferroelectricity
61.30.-v Liquid crystals
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
77.22.Gm Dielectric loss and relaxation
64.70.M- Transitions in liquid crystals

Leakage mechanisms of self-assembled (BiFeO3)0.5:(Sm2O3)0.5 nanocomposite films

H. Yang, H. Wang, G. F. Zou, M. Jain, N. A. Suvorova, D. M. Feldmann, P. C. Dowden, R. F. DePaula, J. L. MacManus-Driscoll, A. J. Taylor, and Q. X. Jia

Appl. Phys. Lett. 93, 142904 (2008); http://dx.doi.org/10.1063/1.3000013 (3 pages) | Cited 11 times

Online Publication Date: 10 October 2008

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Nanocomposite (BiFeO3)0.5:(Sm2O3)0.5 films were deposited on (001) oriented Nb-doped SrTiO3 substrates by pulsed laser deposition. The leakage current density versus electric field characteristics were investigated and compared with those of as-deposited and annealed pure BiFeO3 (BFO) thin films. The dominant leakage mechanisms of nanocomposite films were space-charge-limited current and Poole–Frenkle emission for positive and negative biases, respectively. The leakage current density of nanocomposite films was reduced three orders of magnitude in comparison with the as-deposited pure BFO films. The less oxygen vacancies in the BFO phase in the nanocomposite is believed to contribute to the leakage reduction.
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73.63.Bd Nanocrystalline materials
73.61.-r Electrical properties of specific thin films
73.50.Fq High-field and nonlinear effects
81.16.Mk Laser-assisted deposition
68.55.at Other materials
81.16.Dn Self-assembly
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