APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

6 Oct 2008

Volume 93, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 141901 (2008); http://dx.doi.org/10.1063/1.2990662 (3 pages)

J. H. Han, K. B. Kim, S. Yi, J. M. Park, S. W. Sohn, T. E. Kim, D. H. Kim, J. Das, and J. Eckert
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Direct observation of the birth of a nanocrystalline nucleus in an amorphous matrix

Ijaz A. Rauf

Appl. Phys. Lett. 93, 143101 (2008); http://dx.doi.org/10.1063/1.2998256 (3 pages) | Cited 3 times

Online Publication Date: 6 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nucleation of crystals within an amorphous phase can be induced using electron beam irradiation in an electron microscope. In contrast to generally believed two-step phase transformation involving nucleation and growth, we observe a three-step transformation: a two-step nucleation stage followed by the growth process. The two steps in the nucleation stage are: the formation of a basic crystalline skeleton followed by the diffusion of excess defects to the periphery of the crystalline skeleton.
Show PACS
81.07.Bc Nanocrystalline materials
64.60.Q- Nucleation
64.70.Nd Structural transitions in nanoscale materials
61.82.Rx Nanocrystalline materials
66.30.Pa Diffusion in nanoscale solids
64.70.K- Solid-solid transitions

Enhanced spontaneous emission in a photonic-crystal light-emitting diode

M. Francardi, L. Balet, A. Gerardino, N. Chauvin, D. Bitauld, L. H. Li, B. Alloing, and A. Fiore

Appl. Phys. Lett. 93, 143102 (2008); http://dx.doi.org/10.1063/1.2964186 (3 pages) | Cited 13 times

Online Publication Date: 6 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report direct evidence of enhanced spontaneous emission in a photonic-crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1.3 μm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimes.
Show PACS
85.60.Jb Light-emitting devices

Conducting polymer/carbon nanotube composite as counter electrode of dye-sensitized solar cells

Benhu Fan, Xiaoguang Mei, Kuan Sun, and Jianyong Ouyang

Appl. Phys. Lett. 93, 143103 (2008); http://dx.doi.org/10.1063/1.2996270 (3 pages) | Cited 41 times

Online Publication Date: 6 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports dye-sensitized solar cells with a thin film of multiwall carbon nanotube/conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) composite as the counterelectrode. The composite thin film was prepared by spin coating the aqueous solution of the composite. The devices exhibited high performance with the energy conversion efficiency of 6.5%, short-circuit current of 15.5 mA cm−2, open-circuit voltage of 0.66 V, and fill factor of 0.63. This performance is close to the devices using conventional platinum as the counterelectrode and is significantly higher than the ones using a thin film of multiwall carbon nanotube/poly(styrenesulfonate acide) composite as the counterelectrode.
Show PACS
84.60.Jt Photoelectric conversion

Electronically patterning through one-dimensional nanostripes with high density of states on single-crystalline Al2O3 domain

Pin-Jui Hsu, Chii-Bin Wu, Hong-Yu Yen, Sheng-Syun Wong, Wen-Chin Lin, and Minn-Tsong Lin

Appl. Phys. Lett. 93, 143104 (2008); http://dx.doi.org/10.1063/1.2996578 (3 pages) | Cited 3 times

Online Publication Date: 7 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-assembled one-dimensional nanostripes on the single-crystalline Al2O3 domains are found to be the nucleation sites of nanoparticles through an enhanced density of states observed by the scanning tunneling microscopy and spectroscopy. Bias-dependent topographic images and the conductivity spectra indicate that these nanostripes have both enhanced occupied and unoccupied states within the oxide bandgap. These more metallic nanostripes have stronger electronically trapping ability than the oxide domain, which can be used as a one-dimensional electronically self-patterned template for the guided growth of nanostructures.
Show PACS
81.07.Bc Nanocrystalline materials
81.16.Rf Micro- and nanoscale pattern formation
81.16.Dn Self-assembly
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.22.-f Electronic structure of nanoscale materials and related systems
73.63.Bd Nanocrystalline materials

Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks

Hung-Ta Wang, Omkar A. Nafday, Jason R. Haaheim, Emma Tevaarwerk, Nabil A. Amro, Raymond G. Sanedrin, Chih-Yang Chang, Fan Ren, and Stephen J. Pearton

Appl. Phys. Lett. 93, 143105 (2008); http://dx.doi.org/10.1063/1.2995859 (3 pages) | Cited 9 times

Online Publication Date: 7 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Low cost, direct writing of conductive traces is highly desired for applications in nanoelectronics, photonics, circuit repair, flexible electronics, and nanoparticle-based gas detection. The unique ability of Dip Pen Nanolithography (DPN®) to direct write a variety of materials onto suitable surfaces with nanoscale resolution and area-specific patterning is leveraged in this work. We present a direct-write approach toward creating traces with commercially available silver nanoparticle (AgNP)-based inks using DPN. In this work we demonstrate submicron AgNP feature creation together with a discussion on the ink transport mechanism.
Show PACS
85.40.Hp Lithography, masks and pattern transfer
81.16.Rf Micro- and nanoscale pattern formation

Defect-free ZnSe nanowire and nanoneedle nanostructures

Thomas Aichele, Adrien Tribu, Catherine Bougerol, Kuntheak Kheng, Régis André, and Serge Tatarenko

Appl. Phys. Lett. 93, 143106 (2008); http://dx.doi.org/10.1063/1.2991298 (3 pages) | Cited 12 times

Online Publication Date: 7 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.
Show PACS
81.07.Vb Quantum wires
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
61.72.Nn Stacking faults and other planar or extended defects

Differential surface stress sensor for detection of chemical and biological species

K. Kang, M. Nilsen-Hamilton, and P. Shrotriya

Appl. Phys. Lett. 93, 143107 (2008); http://dx.doi.org/10.1063/1.2996411 (3 pages) | Cited 2 times

Online Publication Date: 7 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a sensor consisting of two micromachined cantilevers (a sensing/reference pair) that is suitable for detection of chemical and biological species. The sensing strategy involves coating the sensing cantilever with receptors that have high affinities for the analyte. The presence of analyte is detected by determining the differential surface stress associated with its adsorption/absorption to the sensing cantilever. An interferometric technique is utilized to measure the differential bending of the sensing cantilever with respect to reference. Surface stress associated with hybridization of single stranded DNA is measured to demonstrate the unique advantages of the sensor.
Show PACS
87.85.fk Biosensors
82.80.-d Chemical analysis and related physical methods of analysis
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems

Shape dependence of nonlinear optical behaviors of nanostructured silver and their silica gel glass composites

Chan Zheng, Yuhong Du, Miao Feng, and Hongbing Zhan

Appl. Phys. Lett. 93, 143108 (2008); http://dx.doi.org/10.1063/1.2998398 (3 pages) | Cited 15 times

Online Publication Date: 8 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanostructured Ag in shapes of nanoplate, nanowire, and nanoparticle, as well as their silica gel glass composites have been prepared and characterized. Nonlinear optical (NLO) properties were measured at 532 and 1064 nm using open aperture z-scan technique and studied from the view of shape effect. NLO behaviors of the nanostructured Ag are found to be shape dependent in suspensions at both the investigated wavelengths, although they originate differently. Comparing to the mother suspensions, the Ag/silica gel glass nanocomposites present rather dissimilar NLO behaviors, which is quite interesting for further studies.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.05.Pj Glass-based composites, vitroceramics
81.16.-c Methods of micro- and nanofabrication and processing
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.40.Kc Metals, semimetals, and alloys

Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor

J.-U. Bae, T.-Y. Lin, J. L. Reno, and J. P. Bird

Appl. Phys. Lett. 93, 143109 (2008); http://dx.doi.org/10.1063/1.2987735 (3 pages) | Cited 4 times

Online Publication Date: 8 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We analyze the influence of applied source-drain bias (Vsd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of Vsd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.
Show PACS
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Thermal decomposition products in arc evaporated TiAlN/TiN multilayers

A. Knutsson, M. P. Johansson, P. O. Å. Persson, L. Hultman, and M. Odén

Appl. Phys. Lett. 93, 143110 (2008); http://dx.doi.org/10.1063/1.2998588 (3 pages) | Cited 17 times

Online Publication Date: 9 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cubic metastable Ti0.34Al0.66N/TiN multilayers were grown by reactive arc evaporation using Ti33–Al67 and Ti cathodes in a N2 atmosphere. X-ray diffractometry and high resolution transmission electron microscopy revealed that metastable c-Ti0.34Al0.66N partly decomposes after annealing at 900 °C into c-TiN rich and c-AlN rich phases with retained lattice coherency. Elemental mapping by energy dispersive x-ray spectroscopy showed a homogenous distribution of Ti and Al in the as-deposited 25 nm Ti0.34Al0.66N layers. The annealed Ti0.34Al0.66N layers exhibited coherent 5 nm domains with high Al content surrounded by a high Ti content matrix. This nanostructure formation is discussed in terms of spinodal decomposition.
Show PACS
68.65.Ac Multilayers
81.07.-b Nanoscale materials and structures: fabrication and characterization
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.40.Gh Other heat and thermomechanical treatments
64.75.-g Phase equilibria
61.46.-w Structure of nanoscale materials

Single-dot optical emission from ultralow density well-isolated InP quantum dots

A. Ugur, F. Hatami, W. T. Masselink, A. N. Vamivakas, L. Lombez, and M. Atatüre

Appl. Phys. Lett. 93, 143111 (2008); http://dx.doi.org/10.1063/1.2996004 (3 pages) | Cited 13 times

Online Publication Date: 9 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate a straightforward way to obtain single well-isolated quantum dots emitting in the visible part of the spectrum and characterize the optical emission from single quantum dots using this method. Self-assembled InP quantum dots are grown using gas-source molecular-beam epitaxy over a wide range of InP deposition rates, using an ultralow growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm2 is realized. The resulting isolated InP quantum dots embedded in an InGaP matrix are individually characterized without the need for lithographical patterning and masks on the substrate. Such low-density quantum dots show excitonic emission at around 670 nm with a linewidth limited by instrument resolution. This system is applicable as a single-photon source for applications such as quantum cryptography.
Show PACS
78.66.Fd III-V semiconductors
81.16.Dn Self-assembly
71.35.-y Excitons and related phenomena
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Photonic crystals with SiO2–Ag “post-cap” nanostructure coatings for surface enhanced Raman spectroscopy

Seok-min Kim, Wei Zhang, and Brian T. Cunningham

Appl. Phys. Lett. 93, 143112 (2008); http://dx.doi.org/10.1063/1.2998695 (3 pages) | Cited 9 times

Online Publication Date: 9 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that the resonant near fields of a large-area replica molded photonic crystal (PC) slab can efficiently couple light from a laser to SiO2–Ag “post-cap” nanostructures deposited on the PC surface by a glancing angle evaporation technique for achieving high surface enhanced Raman spectroscopy (SERS) enhancement factor. To examine the feasibility of the PC-SERS substrate, the simulated electric field around individual Ag particles and the measured Raman spectrum of trans-1,2-bis(4pyridyl)ethane on the PC-SERS substrate were compared with those from an ordinary glass substrate coated with the same SiO2–Ag nanostructures.
Show PACS
78.30.Jw Organic compounds, polymers
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.70.Qs Photonic bandgap materials
78.68.+m Optical properties of surfaces

Fabrication and electrical characterization of Si-based rolled-up microtubes

F. Cavallo, R. Songmuang, and O. G. Schmidt

Appl. Phys. Lett. 93, 143113 (2008); http://dx.doi.org/10.1063/1.2992195 (3 pages) | Cited 15 times

Online Publication Date: 9 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Freestanding SiGe:B/Si:B tubes are fabricated by rolled-up technology. Linear I-V curves are measured both for unreleased and rolled-up films. The bilayer resistance increases after release from the substrate. The electrical resistance of tubes with diameters varying in the range of 0.8−2.2 μm, scales from 110 to 9 kΩ as a function of bilayer thickness. Rapid thermal annealing is used to investigate the effect of B activation and Si–Ge interdiffusion on structural and electrical properties of unreleased and rolled-up films.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors
61.72.Cc Kinetics of defect formation and annealing
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
66.30.Ny Chemical interdiffusion; diffusion barriers

Growth and observation of micro-organic crystals in two-dimensional glass nanovolume cell

Kaya Kobayashi, Hiroko Koyama, Kodai Ishikura, and Toshiyuki Mitsui

Appl. Phys. Lett. 93, 143114 (2008); http://dx.doi.org/10.1063/1.2999583 (3 pages) | Cited 1 time

Online Publication Date: 9 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple type of glass cell to control the organic crystal growth in microsize by electrochemical method is presented. We fabricated growth cells with electrodes patterned by photolithograph and nanoliter volume. They have several merits for growth of organic conductors in microsize, including confined growth volume, observable growth space, rapid growth cycle relative to conventional methods, and compatibility with existing microfabrication techniques. The real time observation of the crystal growth was performed. The results are discussed in terms of the growth mechanism, suggesting a possibility of another microscopic view of crystal growth.
Show PACS
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.45.Fk Electrodes

Diagnostics and growth control of single-walled carbon nanotube forests using a telecentric optical system for in situ height monitoring

Satoshi Yasuda, Don. N. Futaba, Motoo Yumura, Sumio Iijima, and Kenji Hata

Appl. Phys. Lett. 93, 143115 (2008); http://dx.doi.org/10.1063/1.2987480 (3 pages) | Cited 14 times

Online Publication Date: 10 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An in situ telecentric height monitoring system was employed as a standard characterization tool for in situ height monitoring of nanotube forests. We demonstrated that the system possesses a wide dynamic range beyond the centimeter scale, high resolution of 1 μm, free from routine maintenance, simple installation, and use in contrast to previous methods. These features were highlighted by the monitoring of a 5 mm tall forest, the examination of the effect of gas species on growth rates, and the automatic control forest height.
Show PACS
81.16.-c Methods of micro- and nanofabrication and processing
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems

Shallow trench isolation liners and their role in reducing lattice strains

Herman C. Floresca, J. G. Wang, M. J. Kim, and J. A. Smythe

Appl. Phys. Lett. 93, 143116 (2008); http://dx.doi.org/10.1063/1.2999589 (3 pages) | Cited 7 times

Online Publication Date: 10 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Three spin-on dielectric (SOD) shallow trench isolation (STI) structures were studied: nitride liner, nitride liner with anisotropic amorphous silicon (a-Si) bottom fill, and nitride liner with thin conformal a-Si. All samples received the same SOD material conditions and final thermal oxidation. Convergent beam electron diffraction determined the induced STI strain and has been shown to accurately measure strain on 60 nm active areas. The results revealed effects that the liners have in balancing stress induced by volume shrinkage of the SOD. The conformal a-Si liner decreased the shear force that causes dislocations that form at the bottom corners of STI structures.
Show PACS
81.65.Mq Oxidation

Self-assembled molecular monolayers as ultrathin gate dielectric in carbon nanotube transistors

Gaël Robert, Vincent Derycke, Marcelo F. Goffman, Stéphane Lenfant, Dominique Vuillaume, and Jean-Philippe Bourgoin

Appl. Phys. Lett. 93, 143117 (2008); http://dx.doi.org/10.1063/1.2992586 (3 pages) | Cited 9 times

Online Publication Date: 10 October 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the use of a self-assembled monolayer of octadecanethiol on gold as thin gate dielectric for a single-walled carbon nanotube field-effect transistor. P-type transistors display very steep subthreshold slopes, greatly reduced hysteresis, and band-to-band tunneling. The suppression of the gate efficiency for n-type transistors emphasizes the key role of the electrical dipole of the molecular layer in controlling the switching. Combining the versatility of organic dielectrics with the exceptional electronic and mechanical properties of carbon nanotubes opens interesting ways toward the realization of fully organic nanoscale transistors.
Show PACS
85.30.Tv Field effect devices
85.35.Kt Nanotube devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close