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13 Oct 2008

Volume 93, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 151101 (2008); http://dx.doi.org/10.1063/1.2996271 (3 pages)

Xuefeng Zeng and Hongrui Jiang
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Intrinsic generation of OH groups in dry silicon dioxide upon thermal treatments

Laura Nuccio, Simonpietro Agnello, and Roberto Boscaino

Appl. Phys. Lett. 93, 151906 (2008); http://dx.doi.org/10.1063/1.2998581 (3 pages) | Cited 6 times

Online Publication Date: 13 October 2008

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We show the existence of an intrinsic generation mechanism of OH groups in synthetic dry silica upon thermal treatments. Samples are treated for ∼ 160 h at 390 °C in He at 2.7 or 180 bar, and the growth of the OH IR absorption band at 3670 cm−1 is observed. An OH concentration of ∼ 1018 cm−3 is estimated. Possible contributions of reactions with molecules absorbed from the atmosphere are excluded. Reactions with H2O already contained in the samples are rejected by IR measurements. The observed OH generation is attributed to the reaction of network sites with H2 already present in the material. Possible reaction paths are examined.
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81.40.Gh Other heat and thermomechanical treatments
78.30.Hv Other nonmetallic inorganics

Mg composition dependent strain analysis in nonpolar a-plane MgxZn1−xO films

G. Saraf, Y. Lu, and T. Siegrist

Appl. Phys. Lett. 93, 151907 (2008); http://dx.doi.org/10.1063/1.3000636 (3 pages) | Cited 5 times

Online Publication Date: 14 October 2008

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Nonpolar a-plane (11math0) MgxZn1−xO (a-MgxZn1−xO) films are deposited on (01math2) r-sapphire substrates using metalorganic chemical vapor deposition with varying Mg composition (x from 0 to 0.25). Unit cell parameters with Mg composition are determined by high-resolution triple-axis x-ray diffraction. In-plane strain along the c-axis [0001] and m-axis [1math00] in the films is anisotropic and increases with increasing Mg composition. The in-plane strain anisotropy changes with Mg composition in a-MgxZn1−xO. Calculations are carried out to determine the influence of Mg content on the residual interfacial strain.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
68.55.Nq Composition and phase identification
68.60.Bs Mechanical and acoustical properties
61.05.cp X-ray diffraction

Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy

S. F. Chichibu, H. Yamaguchi, L. Zhao, M. Kubota, T. Onuma, K. Okamoto, and H. Ohta

Appl. Phys. Lett. 93, 151908 (2008); http://dx.doi.org/10.1063/1.2998580 (3 pages) | Cited 12 times

Online Publication Date: 14 October 2008

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Improved quantum efficiency and short radiative lifetime were demonstrated for the near-band-edge emission of nearly stacking-fault-free, 200–250-nm-thick, m-plane pseudomorphic InxGa1−xN (0<x ≤ 0.14) films grown by metalorganic vapor phase epitaxy on the low threading dislocation density (<5×106 cm−2) freestanding (FS) GaN substrates. Values of full width at half maximum of x-ray ω-rocking curves of the InxGa1−xN films remain unchanged as the substrate values being 80 and 60 arcsec for the (10math0) diffraction with 〈0001〉 and 〈11math0〉 azimuths, respectively, and 80 arcsec for the (10math2) diffraction. As the surface flatness was improved, the incorporation efficiency of In was lower than the cases for c-plane growth and m-plane growth on a defective GaN substrate, according to nonidentical surface kinetics and absence of inclined/tilted planes, respectively.
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68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.35.bg Semiconductors

Atomic-scale structure and composition of tungsten carbide reinforced diamondlike carbon films

T. W. Scharf, M. C. Romanes, K. C. Mahdak, J. Y. Hwang, R. Banerjee, R. D. Evans, and G. L. Doll

Appl. Phys. Lett. 93, 151909 (2008); http://dx.doi.org/10.1063/1.2995860 (3 pages) | Cited 8 times

Online Publication Date: 14 October 2008

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This study presents the true atomic-scale structure and composition of hard/lubricious nanocomposite diamondlike carbon (DLC) films. Nanocrystalline tungsten carbide ( ∼ 2–4 nm precipitates) in mixed sp3/sp2 amorphous C–H matrices was characterized using the combination of three-dimensional atom probe (3DAP) tomography and transmission electron microscopy. Excellent correspondence in structural and chemical layering was observed (alternating ∼ 25 nm thick carbon-rich and tungsten-rich layers) with 3DAP also revealing C32+ and C2H4+ species in the carbon-rich layers and W2+, WC2+, C+, and C2+ species in the tungsten-rich layers. 3D morphology and chemical partitioning of the WC nanoprecipitates in the tungsten-rich layers are also discussed.
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68.55.-a Thin film structure and morphology
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.-c Methods of micro- and nanofabrication and processing
81.30.Mh Solid-phase precipitation

Thermal emittance changes at the charge ordering transition of (Sm0.35Ca0.65)MnO3

P. Laffez, C. Napierala, M. Zaghrioui, V. Ta Phuoc, A. Hassini, and M. R. Ammar

Appl. Phys. Lett. 93, 151910 (2008); http://dx.doi.org/10.1063/1.2999372 (3 pages) | Cited 7 times

Online Publication Date: 14 October 2008

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The reversible charge ordering transition of (Sm1−x,Cax)MnO3 is associated with strong changes in electrical, magnetic, and infrared properties. In this work, normal spectral emissivity is calculated from infrared reflectance of bulk polished ceramics. Emissivity versus temperature shows a sharp variation at the charge ordering transition near room temperature. By comparing the apparent temperature of the sample with the absolute temperature, we show that Sm0.35Ca0.65MnO3 is a good candidate for infrared furtivity around room temperature.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
72.80.Sk Insulators
75.80.+q Magnetomechanical effects, magnetostriction
71.30.+h Metal-insulator transitions and other electronic transitions

Stress-induced α″ martensitic (110) twinning in β-Ti alloys

D. H. Ping, Y. Yamabe-Mitarai, C. Y. Cui, F. X. Yin, and M. A. Choudhry

Appl. Phys. Lett. 93, 151911 (2008); http://dx.doi.org/10.1063/1.3002295 (3 pages) | Cited 4 times

Online Publication Date: 15 October 2008

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A fully transformed α″ martensite with stress-induced nanoscale {110}, {021}-type compound twin or a 90° rotation twin has been experimentally explored and unambiguously characterized in traditional β-type Ti alloys, which usually undergo a partial martensitic transformation [a β grain partially transformed into α″ with internal (111) twin] by quenching. This newly observed twinning, which matches with the predication based on the deformation twinning theory of Bilby and Crocker [Proc. R. Soc. 288, 241 (1965) ], can help to explain the deformation mechanism and aid future development of advanced materials.
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81.30.Kf Martensitic transformations
81.40.Lm Deformation, plasticity, and creep
64.70.K- Solid-solid transitions
61.72.Mm Grain and twin boundaries
62.20.F- Deformation and plasticity

Scattering-based hole burning through volume speckles in a random medium with tunable diffusion constant

Shunsuke Murai, Koji Fujita, Takayuki Hirao, Kazuki Nakanishi, Kazuyuki Hirao, and Katsuhisa Tanaka

Appl. Phys. Lett. 93, 151912 (2008); http://dx.doi.org/10.1063/1.2955830 (3 pages) | Cited 1 time

Online Publication Date: 15 October 2008

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A photoreactive random medium with tunable diffusion constant D is fabricated by infiltrating Sm2+-doped macroporous aluminosilicate glass with liquid crystal (LC). Time-resolved transmission experiment reveals that D in the LC-infiltrated sample changes abruptly at around 35 °C due to the phase transition of LC between nematic and isotropic. The hole burning effect based on the interference of multiply scattered light is investigated with a particular motivation of controlling hole burning properties externally via temperature. We demonstrate that the holes are separately registered in each LC phase and can be detected selectively depending on the temperature.
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78.47.nd Hole burning spectroscopy
61.43.Fs Glasses
61.30.-v Liquid crystals
64.70.M- Transitions in liquid crystals

On the growth mechanism of plasma deposited amorphous silicon thin films

Sumeet C. Pandey, Tejinder Singh, and Dimitrios Maroudas

Appl. Phys. Lett. 93, 151913 (2008); http://dx.doi.org/10.1063/1.2990641 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2008

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We propose a comprehensive mechanism of amorphous silicon thin film growth by plasma deposition based on results of kinetic Monte Carlo simulations according to a database constructed by first-principles density functional theory calculations. The growth mechanism consists of various surface kinetic events including radical-surface and adsorbed radical-radical interactions, radical-surface diffusion, and surface hydride dissociation reactions. Of particular importance is the radical dissociative adsorption mediated by Si over-coordination defects along the reaction pathway. The proposed mechanism explains fully the experimentally measured surface composition of plasma deposited films under conditions that make the silyl radical the dominant deposition precursor.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.ag Semiconductors
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
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The time reversed elastic nonlinearity diagnostic applied to evaluation of diffusion bonds

T. J. Ulrich, Alexander M. Sutin, Thomas Claytor, Pallas Papin, Pierre-Yves Le Bas, and James A. TenCate

Appl. Phys. Lett. 93, 151914 (2008); http://dx.doi.org/10.1063/1.2998408 (3 pages) | Cited 11 times

Online Publication Date: 16 October 2008

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With the recent application of time reversed acoustics and nonlinear elasticity to imaging mechanical damage, the development of time reversal based nondestructive evaluation techniques has begun. Here, diffusion bonded metal disks containing intentionally disbonded regions are analyzed using the time reversed elastic nonlinearity diagnostic. The nonlinear results are compared with linear ultrasonic imaging (C scan). Scanning electron microscopy is shown to illustrate the differences between the features seen by the linear and nonlinear methods.
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81.70.Cv Nondestructive testing: ultrasonic testing, photoacoustic testing
66.30.Ny Chemical interdiffusion; diffusion barriers
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Physical factors controlling the ductility of bulk metallic glasses

Y. Liu, H. Wu, C. T. Liu, Z. Zhang, and V. Keppens

Appl. Phys. Lett. 93, 151915 (2008); http://dx.doi.org/10.1063/1.2998410 (3 pages) | Cited 6 times

Online Publication Date: 16 October 2008

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In order to identify key physical factor controlling the deformation and fracture behavior of bulk metallic glasses (BMGs), we compiled and analyzed the elastic moduli and compressive ductility for BMGs. In addition, new modulus data were generated in the critical ranges in order to facilitate the analysis. We have found that the intrinsic ductility of BMGs can be correlated with the bulk-to-shear modulus ratio B/G according to Pugh’s [Philos. Mag. 45, 823 (1954) ] rule. In some individual BMG systems, for example, Fe based, the relationship seems to be very clear. The physical meaning of this correlation is discussed in terms of atomic bonding and connectivity.
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81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
62.20.mm Fracture
62.20.fk Ductility, malleability
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Reversible growth-mode transition in SrRuO3 epitaxy

R. Bachelet, F. Sánchez, J. Santiso, and J. Fontcuberta

Appl. Phys. Lett. 93, 151916 (2008); http://dx.doi.org/10.1063/1.3001932 (3 pages) | Cited 7 times

Online Publication Date: 16 October 2008

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It is known that a transition from layer-by-layer (LbL) to step-flow (SF) can occur at the earliest stages of SrRuO3 growth on SrTiO3(001). We report here the observation of a reversible transition between these two-dimensional growth modes that can occur at any SrRuO3 thickness, tuned by short growth interruption. We show that under SF mode, growth interruption allows step-edge straightening, thus resulting in enhanced island nucleation on locally wider terraces and reduced adatom incorporation at step edges. As a result, the LbL mode is recovered. This reversible transition critically influences the growing-layer morphology and is of crucial interest in epitaxial-heterostructure fabrication.
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68.55.A- Nucleation and growth
68.55.J- Morphology of films

Realization of defect-free epitaxial core-shell GaAs/AlGaAs nanowire heterostructures

Michael J. Tambe, Sung Keun Lim, Matthew J. Smith, Lawrence F. Allard, and Silvija Gradečak

Appl. Phys. Lett. 93, 151917 (2008); http://dx.doi.org/10.1063/1.3002299 (3 pages) | Cited 15 times

Online Publication Date: 17 October 2008

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We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell deposition with high aluminum incorporation. Energy dispersive x-ray analysis determines the shell composition to be Al0.9Ga0.1As and measures the uniformity of the shell thickness. Lattice-resolved high-angle annular dark-field scanning transmission electron microscopy images confirm the core-shell interface to be defect-free, epitaxial, and atomically sharp. The ability to realize GaAs/AlGaAs core-shell nanowires with precise control over the morphology and composition is essential to the development of nanowire-based high mobility electronics.
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81.07.Bc Nanocrystalline materials
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
68.65.La Quantum wires (patterned in quantum wells)
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Formation and decomposition of AlH3 in the aluminum-hydrogen system

H. Saitoh, A. Machida, Y. Katayama, and K. Aoki

Appl. Phys. Lett. 93, 151918 (2008); http://dx.doi.org/10.1063/1.3002374 (3 pages) | Cited 28 times

Online Publication Date: 17 October 2008

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The pressure-temperature diagram of hydrogen-aluminum system was determined for a pressure range of 0–10 GPa and a temperature range of 27–800 °C by in situ x-ray diffraction measurements. Pristine aluminum was hydrogenated to trihydride at 8.9 GPa and 600 °C. The cyclic formation and decomposition of the hydride resulted in lowering of the hydrogenation conditions down to 4.9 GPa and 330 °C. Transparent single crystals were recovered at ambient conditions.
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84.60.-h Direct energy conversion and storage
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Uniformly dimerized C60 film prepared by deposition under in situ photoirradiation

H. Tanimoto, K. Yamada, H. Mizubayashi, Y. Matsumoto, H. Naramaoto, and S. Sakai

Appl. Phys. Lett. 93, 151919 (2008); http://dx.doi.org/10.1063/1.3003866 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2008

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C60 films with thicknesses of 100–480 nm were deposited on Si reed substrates under in situ photoirradiation. In anelasticity measurements, no internal friction peaks associated with rotational motions of the C60 molecules were observed, and Young’s modulus was 1.5 times larger than that of a pristine C60 material. X-ray diffraction patterns suggested that the face-centered cubic lattice was contracted by about 3% and locally distorted from the pristine C60 material. Raman spectra very similar to those reported for dimerized C60 were also obtained. These characteristics recovered to those of the pristine C60 materials after annealing the C60 films at 523 K. These results indicate uniform dimerization in C60 films deposited under in situ photoirradiation.
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68.60.Bs Mechanical and acoustical properties
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
62.20.de Elastic moduli
78.30.Na Fullerenes and related materials
81.40.Gh Other heat and thermomechanical treatments
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Electron irradiation of AlGaN/GaN and AlN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, A. V. Osinsky, P. P. Chow, N. G. Kolin, V. M. Boiko, and D. I. Merkurisov

Appl. Phys. Lett. 93, 152101 (2008); http://dx.doi.org/10.1063/1.3000613 (3 pages) | Cited 10 times

Online Publication Date: 13 October 2008

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The effects of 10 MeV electron irradiation on AlGaN/GaN and AlN/GaN heterojunctions grown by molecular beam epitaxy are reported. The irradiation increases the resistivity of the GaN buffer due to compensation by radiation defects with levels near Ec−1 eV and decreases the mobility of the two-dimensional electron gas (2DEG) near the AlGaN/GaN (or AlN/GaN) interface. The bulk carrier removal rate in the GaN buffer is the same for both types of structures and similar to carrier removal rates for undoped n-GaN films. In structures with a density of residual donors of ∼ 1015 cm−3, irradiation with electron doses of ∼ 5×1015 cm−2 renders the buffer semi-insulating. The 50% degradation of the 2DEG conductivity happens at several times higher doses (close to 3×1016 cm−2 versus 6.5×1015 cm−2) for AlN/GaN than for AlGaN/GaN structures, most likely because of the lower thickness of the AlN barrier.
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61.80.Fe Electron and positron radiation effects
61.82.Fk Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

MgO thickness dependence of spin injection efficiency in spin-light emitting diodes

Y. Lu, V. G. Truong, P. Renucci, M. Tran, H. Jaffrès, C. Deranlot, J.-M. George, A. Lemaître, Y. Zheng, D. Demaille, P.-H. Binh, T. Amand, and X. Marie

Appl. Phys. Lett. 93, 152102 (2008); http://dx.doi.org/10.1063/1.2999631 (3 pages) | Cited 9 times

Online Publication Date: 13 October 2008

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We have studied the electron spin injection efficiency from a CoFeB/MgO spin injector into AlGaAs/GaAs semiconductor light emitting diodes. The circular polarization of the electroluminescence signal reaches a value as large as 32% at 100 K under a 0.8 T magnetic field. We show that the spin injection efficiency increases with the increase in the MgO barrier thickness from 1.4 to 4.3 nm. Moreover, a higher spin injection efficiency is obtained for MgO barriers grown at 300 °C compared to the ones grown at room temperature. This effect is attributed to the MgO texturing occurring at high temperatures.
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85.60.Jb Light-emitting devices
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Electric field induced phase transition in charge-ordered LuFe2O4

Changhui Li, Xiangqun Zhang, Zhaohua Cheng, and Young Sun

Appl. Phys. Lett. 93, 152103 (2008); http://dx.doi.org/10.1063/1.3001591 (3 pages) | Cited 24 times

Online Publication Date: 14 October 2008

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The measurements of resistance under various applied voltages as well as the highly nonlinear current-voltage characteristics reveal that a small electric field is able to induce an insulating to metallic phase transition in LuFe2O4. The threshold field at which the phase transition occurs decreases exponentially with the increasing temperature. We interpret this transition as a consequence of the breakdown of the charge-ordered state triggered by applied electric field. This electrically driven phase transition results in a colossal electroresistance effect around room temperature which makes LuFe2O4 a very promising material for many applications.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
68.35.Rh Phase transitions and critical phenomena

Transfer characteristics in graphene field-effect transistors with Co contacts

Ryo Nouchi, Masashi Shiraishi, and Yoshishige Suzuki

Appl. Phys. Lett. 93, 152104 (2008); http://dx.doi.org/10.1063/1.2998396 (3 pages) | Cited 21 times

Online Publication Date: 14 October 2008

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Graphene field-effect transistors with Co contacts as source and drain electrodes show anomalous distorted transfer characteristics. The anomaly appears only in short-channel devices (shorter than approximately 3 μm) and originates from a contact-induced effect. Band alteration of a graphene channel by the contacts is discussed as a possible mechanism for the anomalous characteristics observed.
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85.30.Tv Field effect devices

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

F. Stokker-Cheregi, A. Vinattieri, E. Feltin, D. Simeonov, J. Levrat, J.-F. Carlin, R. Butté, N. Grandjean, and M. Gurioli

Appl. Phys. Lett. 93, 152105 (2008); http://dx.doi.org/10.1063/1.2973897 (3 pages) | Cited 1 time

Online Publication Date: 15 October 2008

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We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with increasing well thickness is observed, as a result of the reduced quantum confinement and the increasing impact of the quantum confined Stark effect. In the sample with 5% Al content in the barriers, for thicknesses of the well region larger than ∼ 9 monolayers, the biexciton binding energy is found to be smaller than that measured for bulk GaN.
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73.21.Fg Quantum wells
78.20.Jq Electro-optical effects
78.47.jd Time resolved luminescence
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.-y Excitons and related phenomena

Excess-silver-induced bridge formation in a silver sulfide atomic switch

Zhongchang Wang, Tingkun Gu, Tomofumi Tada, and Satoshi Watanabe

Appl. Phys. Lett. 93, 152106 (2008); http://dx.doi.org/10.1063/1.2963197 (3 pages) | Cited 12 times

Online Publication Date: 15 October 2008

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Structural properties and electron transport of a Ag2S atomic switch composed of Ag–Ag2S–Ag heterostructure are investigated by nonequilibrium Green’s function calculations considering the effect of excess Ag in the Ag2S layer. In addition to confirming experimentally the formation of the Ag bridge inside Ag2S, the bridge is found to consist of units having a structure similar to that of the Ag (111) face in the bulk Ag. The analyses of Mulliken population, transmission spectra, and current-voltage characteristics reveal that the bridge has a conductive and metallic nature.
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85.35.-p Nanoelectronic devices
84.32.Dd Connectors, relays, and switches

Field-induced semiconductor-metal transition in individual NiO–Ni Schottky nanojunction

Xingchen Zhao, Jia-Lin Sun, and Jia-Lin Zhu

Appl. Phys. Lett. 93, 152107 (2008); http://dx.doi.org/10.1063/1.2998574 (3 pages) | Cited 4 times

Online Publication Date: 15 October 2008

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Ni nanowire arrays were obtained by electrochemical deposition in a template. After oxidation, one-dimensional NiO–Ni Schottky junctions with nanoscale-thickness NiO layer were achieved, and the structure was characterized in terms of different scales. By application of an electric field through atomic force microscopy, the semiconductor-metal transition was observed and an enhanced nonlinearity was found in the individual Schottky nanojunction at room temperature. This kind of Schottky nanojunction requires no doping and may provide a wide variety of applications in the future.
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73.30.+y Surface double layers, Schottky barriers, and work functions
87.80.Kc Electrochemical techniques
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Internal gettering of iron in multicrystalline silicon at low temperature

Rafael Krain, Sandra Herlufsen, and Jan Schmidt

Appl. Phys. Lett. 93, 152108 (2008); http://dx.doi.org/10.1063/1.2987521 (3 pages) | Cited 15 times

Online Publication Date: 17 October 2008

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The interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of magnitude. The observed disappearance of interstitial iron is explained by internal gettering of the iron by crystallographic defects.
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81.05.Cy Elemental semiconductors
81.65.Tx Gettering
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Cc Kinetics of defect formation and annealing
61.72.jj Interstitials
61.72.sd Impurity concentration

Deuterium diffusion and trapping in hydrothermally grown single crystalline ZnO

K. M. Johansen, J. S. Christensen, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. Svensson

Appl. Phys. Lett. 93, 152109 (2008); http://dx.doi.org/10.1063/1.3001605 (3 pages) | Cited 13 times

Online Publication Date: 17 October 2008

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Secondary ion mass spectrometry is employed to investigate diffusion of 2H implanted in hydrothermally grown single crystal ZnO. Diffusion profiles have been studied after 30 min isochronal heat treatments from 100 to 400 °C and evaluated using three different models: the infinite source model, a solid solubility limited model, and a trap limited model. Only the latter one reproduces closely the measured values. From this model an activation energy Ea = 0.85 eV is extracted, and it is speculated that trapping may be a source of the discrepancies between the reported values of Ea in the literature.
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66.30.-h Diffusion in solids
81.10.Dn Growth from solutions
61.72.uj III-V and II-VI semiconductors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.40.Gh Other heat and thermomechanical treatments

Low temperature electric pulse induced resistance switching in Na0.5−δCoO2

G. Garbarino, M. Núñez-Regueiro, M. Armand, and P. Lejay

Appl. Phys. Lett. 93, 152110 (2008); http://dx.doi.org/10.1063/1.2931701 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2008

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We have been able to control the resistance state of the NaxCoO2 system for the x = 0.5−δ sample at low temperatures by the application of current pulses. We can reversibly commute between two resistance states, controlling the amplitude and polarity of the applied pulses. We also studied the resistance temperature dependence of the different state and we interpret the switching effect in term of the displacement of Na+ ions induced by current.
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72.60.+g Mixed conductivity and conductivity transitions
72.80.Sk Insulators
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Giant electric-field-induced magnetization in a magnetoelectric composite at high frequency

Jian-Ping Zhou, Yang-Yang Guo, Zengzhe Xi, Peng Liu, Shuyu Lin, Gang Liu, and Huai-Wu Zhang

Appl. Phys. Lett. 93, 152501 (2008); http://dx.doi.org/10.1063/1.2998699 (3 pages) | Cited 16 times

Online Publication Date: 13 October 2008

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Electric-field-induced magnetization (EIM) characteristics are investigated in a small 0.68[Pb(Mg1/3Nb2/3)O3]0.32PbTiO3/Terfenol-D bilayered composite by using double coils in a wide frequency range of 10–700 kHz. The EIM behaviors are strongly dependent on driving electric field frequency, bias magnetic field, and angle θ between the bias magnetic field and polarization direction. The magnetoelectric coefficient at electromechanical resonance frequency of 185 kHz reaches up to 3.1×10−7 s/m, which is ∼ 60 times higher than the values at nonresonance frequency. The EIM variations with the bias magnetic field exhibit hysteresis, forming EIM hysteresis loops caused by the magnetostrictive hysteresis from Terfenol-D.
Show PACS
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
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