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13 Oct 2008

Volume 93, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 93, 151101 (2008); http://dx.doi.org/10.1063/1.2996271 (3 pages)

Xuefeng Zeng and Hongrui Jiang
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Comment on “A waveguide slit array antenna fabricated with subwavelength periodic grooves Appl. Phys. Lett. 91, 143512 (2007) ”

M. Beruete, F. Falcone, M. Sorolla, I. Campillo, J. S. Dolado, J. E. Rodríguez-Seco, and E. Perea

Appl. Phys. Lett. 93, 156101 (2008); http://dx.doi.org/10.1063/1.2992196 (1 page) | Cited 2 times

Online Publication Date: 13 October 2008

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Abstract Unavailable
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84.40.Ba Antennas: theory, components and accessories
84.40.Az Waveguides, transmission lines, striplines
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Comment on “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate” [ Appl. Phys. Lett. 90, 083507 (2007) ]

Zhiwen Zhou, Cheng Li, Songyan Chen, Hongkai Lai, and Jinzhong Yu

Appl. Phys. Lett. 93, 156102 (2008); http://dx.doi.org/10.1063/1.3003873 (2 pages)

Online Publication Date: 17 October 2008

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In a recent letter, Hsieh et al. reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only 0.45 μm, a surface root-mean-square roughness of less than 0.4 nm, and a threading dislocation of 7.6×106 cm−2 on Si+ pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.bg Semiconductors
61.72.J- Point defects and defect clusters
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
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