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13 Oct 2008

Volume 93, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 151101 (2008); http://dx.doi.org/10.1063/1.2996271 (3 pages)

Xuefeng Zeng and Hongrui Jiang
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Photonic crystal high-efficiency multispectral thermal emitters

I. El-Kady, G. B. Farfan, R. Rammohan, and M. M. Reda Taha

Appl. Phys. Lett. 93, 153501 (2008); http://dx.doi.org/10.1063/1.2993336 (3 pages) | Cited 1 time

Online Publication Date: 13 October 2008

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We demonstrate through numerical simulation the modification of the thermal emission spectrum by a metallic photonic crystal (PhC). Here the radiation is funneled into a narrow emission band in contrast to the broad spectrum associated with a Planckian-distribution. A detailed quantitative evaluation of the spectral, power, and angular efficiencies of a PhC thermal emitter and its portability across IR spectral bands is provided. We show that an optimized tungsten PhC possesses a predominant narrow-band forward emission profile with an emitter efficiency that is more than double that of an ideal blackbody and ∼ 65–75% more power-efficient across the IR spectrum.
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42.70.Qs Photonic bandgap materials
78.60.Kn Thermoluminescence
78.30.-j Infrared and Raman spectra

On the UV responsivity of neutron irradiated 4H-SiC

Anna Cavallini, Antonio Castaldini, and Filippo Nava

Appl. Phys. Lett. 93, 153502 (2008); http://dx.doi.org/10.1063/1.2993224 (3 pages) | Cited 2 times

Online Publication Date: 14 October 2008

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We report on UV responsivity of 4H-SiC photodiodes irradiated by 1 MeV neutrons. Current-voltage characteristics, photoresponse spectra, and responsivity were obtained with light wavelength from 200 to 450 nm. Photoresponse results slightly affected by irradiation up to the threshold fluence Φcritical = 8×1014 cm−2. At fluences ≥ Φcritical the rejection rate is in the order of 103 in the range of 200–320 nm while it is less than 102 at about 320 nm. The abrupt increase in midgap traps induced by irradiation at Φcritical, observed by photoinduced current transient spectroscopy, proves carrier generation/trapping to be the controlling mechanism for the responsivity.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Bt Optoelectronic device characterization, design, and modeling
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

H. W. Li, B. E. Kardynał, D. J. P. Ellis, A. J. Shields, I. Farrer, and D. A. Ritchie

Appl. Phys. Lett. 93, 153503 (2008); http://dx.doi.org/10.1063/1.2978232 (3 pages) | Cited 2 times

Online Publication Date: 14 October 2008

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Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%±0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures.
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85.30.Kk Junction diodes
81.07.Ta Quantum dots

Self-quenching and self-recovering InGaAs/InAlAs single photon avalanche detector

Kai Zhao, Sifang You, James Cheng, and Yu-hwa Lo

Appl. Phys. Lett. 93, 153504 (2008); http://dx.doi.org/10.1063/1.3000610 (3 pages) | Cited 6 times

Online Publication Date: 15 October 2008

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To prevent device damage through thermal runaway, conventional III–V single photon avalanche diodes (SPADs) operate in gated mode where the device is biased above breakdown only for a short gating period. Here a free-running In0.53Ga0.47As/InAlAs SPAD with built-in negative feedback mechanism is reported. A physical model is also developed to formulate the avalanche process with negative feedback. Introducing negative feedback enables the device to possess self-quenching and self-recovering capabilities. Such devices have demonstrated free-running single photon detection at 1550 nm wavelength with single photon detection efficiency of 11.5%, dark count rate of 3.3 M/s, and a self-recovery time of 60 ns at 160 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors

S. Y. Son, Y. S. Choi, P. Kumar, H. W. Park, T. Nishida, R. K. Singh, and S. E. Thompson

Appl. Phys. Lett. 93, 153505 (2008); http://dx.doi.org/10.1063/1.3000615 (3 pages) | Cited 4 times

Online Publication Date: 15 October 2008

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Uniaxial-mechanical-stress altered gate leakage current and dielectric constant of silicon metal-oxide-semiconductor (MOS) devices with nitrided Hf-silicate (HfSiON) dielectric are measured as a function of uniaxial stress applied using four-point wafer bending along the [110] direction. The gate leakage current and dielectric constant are found to increase by ∼ 2% per 100 MPa of tensile and compressive stresses. A decrease in hole trap activation energy in hafnium oxide-based dielectric is used to explain the mechanical stress altered gate leakage. It is proposed that the HfSiON dielectric constant increase results from band gap narrowing caused by strain induced N p band splitting.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Ps Other inorganic compounds
81.40.Lm Deformation, plasticity, and creep

Asymmetric switching in a ferrielectric liquid crystal device

S. Jaradat, P. D. Brimicombe, N. W. Roberts, C. Southern, and H. F. Gleeson

Appl. Phys. Lett. 93, 153506 (2008); http://dx.doi.org/10.1063/1.3001933 (3 pages) | Cited 3 times

Online Publication Date: 16 October 2008

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The fast multistate switching associated with ferroelectric and antiferroelectric smectic liquid crystals makes them important materials for electro-optic devices, and asymmetric electro-optic responses are of particular interest for some analog switching applications. We report intrinsic asymmetric switching in a ferrielectric liquid crystal device observed using time-resolved small angle x-ray scattering and electro-optic measurements. The experiments reveal a marked variation in the response time depending on field polarity not present in the ferroelectric or antiferroelectric phase. We suggest that this is a consequence of the ferrielectric structure itself and interactions with the device surfaces.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.70.Df Liquid crystals
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
61.30.-v Liquid crystals

Impact of self-assembled monolayer on low frequency noise of organic thin film transistors

Lin Ke, Surani Bin Dolmanan, Lu Shen, Chellappan Vijila, Soo Jin Chua, Rui-Qi Png, Perq-Jon Chia, Lay-Lay Chua, and Peter K-H. Ho

Appl. Phys. Lett. 93, 153507 (2008); http://dx.doi.org/10.1063/1.2995856 (3 pages) | Cited 1 time

Online Publication Date: 17 October 2008

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Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance.
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85.30.Tv Field effect devices
81.65.-b Surface treatments
52.77.-j Plasma applications

Color-stable and efficient stacked white organic light-emitting devices comprising blue fluorescent and orange phosphorescent emissive units

Ping Chen, Qin Xue, Wenfa Xie, Yu Duan, Guohua Xie, Yi Zhao, Jingying Hou, Shiyong Liu, Liying Zhang, and Bin Li

Appl. Phys. Lett. 93, 153508 (2008); http://dx.doi.org/10.1063/1.2998598 (3 pages) | Cited 15 times

Online Publication Date: 17 October 2008

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We have demonstrated two kinds of stacked white organic light-emitting diodes (WOLEDs) employing tri(8-hydroxyquinoline) aluminum:20 wt %Mg/MoO3 as charge generation layer. White light emission can be obtained by mixing blue fluorescence and orange phosphorescence. Stacked WOLED with individual blue fluorescent and orange phosphorescent emissive units has better color stability and higher efficiency than that with double white emissive units, which is attributed to the avoidance of the movement of charges recombination zone and elimination of the Dexter energy transfer between blue and orange emission layers occurring in the latter. The efficiency of the stacked WOLED is 35.9 cd/A at 1000 cd/m2.
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85.60.Jb Light-emitting devices
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