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20 Oct 2008

Volume 93, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 93, 161101 (2008); http://dx.doi.org/10.1063/1.3000630 (3 pages)

E. Mujagić, L. K. Hoffmann, S. Schartner, M. Nobile, W. Schrenk, M. P. Semtsiv, M. Wienold, W. T. Masselink, and G. Strasser
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Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction

Zhen Guo, Dongxu Zhao, Yichun Liu, Dezhen Shen, Jiying Zhang, and Binghui Li

Appl. Phys. Lett. 93, 163501 (2008); http://dx.doi.org/10.1063/1.3003877 (3 pages) | Cited 25 times

Online Publication Date: 20 October 2008

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Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6×102 at 4 V in the dark. Experiments demonstrated that the diode could be used to detect either visible or ultraviolet light by easily controlling the polarity of the voltage applied on the heterojunction. The spectral response of the device will be discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Bt Optoelectronic device characterization, design, and modeling

Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes

Binh-Minh Nguyen, Darin Hoffman, Pierre-Yves Delaunay, Edward Kwei-Wei Huang, Manijeh Razeghi, and Joe Pellegrino

Appl. Phys. Lett. 93, 163502 (2008); http://dx.doi.org/10.1063/1.3005196 (3 pages) | Cited 16 times

Online Publication Date: 20 October 2008

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We present theoretically and experimentally the effect of the band discontinuity in type II misaligned InAs/GaSb superlattice heterodiodes. Calculations using the empirical tight binding method have shown the great flexibility in tuning the energy levels of the band edge in M-structure superlattice as compared to the standard InAs/GaSb superlattice. Through the experimental realization of several p-π-M-n photodiodes, the band discontinuity alignment between the standard binary-binary superlattice and the M-structured superlattice was investigated via optical characterization. The agreement between the theoretical predictions and the experimental measurement confirms the capability of controlling the M-structure band edges and suggests a way to exploit this advantage for the realization of heterostructures containing an M-structured superlattice without bias dependent operation.
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73.21.Cd Superlattices
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors

Arman Ahnood, Khashayar Ghaffarzadeh, Arokia Nathan, Peyman Servati, Flora Li, Mohammad R. Esmaeili-Rad, and Andrei Sazonov

Appl. Phys. Lett. 93, 163503 (2008); http://dx.doi.org/10.1063/1.2999590 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2008

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Contact resistance has a significant impact on the electrical characteristics of thin film transistors. It limits their maximum on-current and affects their subsequent behavior with bias. This distorts the extracted device parameters, in particular, the field-effect mobility. This letter presents a method capable of accounting for both the non-ohmic (nonlinear) and ohmic (linear) contact resistance effects solely based upon terminal I-V measurements. Applying our analysis to a nanocrystalline silicon thin film transistor, we demonstrate that contact resistance effects can lead to a twofold underestimation of the field-effect mobility.
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85.30.Tv Field effect devices
73.40.Cg Contact resistance, contact potential
85.35.-p Nanoelectronic devices

Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal

H. W. Then, G. Walter, M. Feng, and N. Holonyak, Jr.

Appl. Phys. Lett. 93, 163504 (2008); http://dx.doi.org/10.1063/1.3000635 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2008

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We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, β( = ICO/IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the “faster” QW collector (reduced β) and differential gain, result in a higher 3 dB bandwidth (f3 dB = 1/2πτ).
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.Pq Bipolar transistors

Midinfrared type-II InAs/GaSb superlattice photodiodes toward room temperature operation

Jian V. Li, Cory J. Hill, Jason Mumolo, Sarath Gunapala, Shin Mou, and Shun-Lien Chuang

Appl. Phys. Lett. 93, 163505 (2008); http://dx.doi.org/10.1063/1.2949744 (3 pages) | Cited 11 times

Online Publication Date: 23 October 2008

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We study midinfrared type-II InAs/GaSb superlattice p-i-n photodiodes for high temperature operation. Representative samples exhibit a 3.9 μm cutoff wavelength at 250 K and detectivity of 4.9×1013, 1.0×1010, and 2.4×109 cm Hz1/2/W at 78, 240, and 300 K, respectively. Longer-wavelength devices exhibit a 5.2 μm cutoff wavelength at 240 K, and detectivity of 1.3×1013 and 1.5×109 cm Hz1/2/W at 78 and 240 K, respectively. The electron beam induced current technique is used to investigate the spatially varying carrier collection efficiency contribution to the quantum efficiency at different biases and temperatures. The residual doping in the i region is determined to be 6.0×1013 cm−3 (n type) at 78 K. The prospect of operating focal plane arrays based on the sample studied around 240 K is quite promising.
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85.60.Dw Photodiodes; phototransistors; photoresistors
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