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20 Oct 2008

Volume 93, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 93, 161101 (2008); http://dx.doi.org/10.1063/1.3000630 (3 pages)

E. Mujagić, L. K. Hoffmann, S. Schartner, M. Nobile, W. Schrenk, M. P. Semtsiv, M. Wienold, W. T. Masselink, and G. Strasser
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Effect of ferroelastic twin walls on local polarization switching: Phase-field modeling

S. Choudhury, J. X. Zhang, Y. L. Li, L. Q. Chen, Q. X. Jia, and S. V. Kalinin

Appl. Phys. Lett. 93, 162901 (2008); http://dx.doi.org/10.1063/1.2993330 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2008

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Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.
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77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films

Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Nicolas Tiercelin, A. Talbi, V. Preobrazhensky, P. Pernod, V. Mortet, K. Haenen, and A. Soltani

Appl. Phys. Lett. 93, 162902 (2008); http://dx.doi.org/10.1063/1.3001601 (3 pages) | Cited 13 times

Online Publication Date: 21 October 2008

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Hybrid giant magnetostrictive-piezoelectric film/film structures exhibiting magnetoelectric (ME) effect associated with a magnetic instability of the spin reorientation transition type are presented. We first present the theoretical study of a clamped beam actuator composed of a piezoelectric layer on a substrate actuated by a magnetostrictive layer. The actuator is a polished 50 μm thick 18×5 mm2 silicon substrate coated by an electrode, aluminum nitride, and magnetostrictive nanostructured layer. A ME coefficient of 30 V Oe−1 cm−1 at a 35 KHz longitudinal resonance was measured. Nonlinear excitation of this mode showed a “nonlinear” dynamic ME coefficient of 4 V Oe−1 cm−1.
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07.07.Tw Servo and control equipment; robots
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.47.De Giant magnetoresistance
72.20.My Galvanomagnetic and other magnetotransport effects
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
77.55.-g Dielectric thin films
77.65.-j Piezoelectricity and electromechanical effects

Low-temperature structural and dielectric phenomena in La1/3NbO3 and La1/3TaO3: Comparative study

Andrei N. Salak, Nikolai P. Vyshatko, Dmitry D. Khalyavin, Oleksandr Prokhnenko, and Victor M. Ferreira

Appl. Phys. Lett. 93, 162903 (2008); http://dx.doi.org/10.1063/1.3006331 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2008

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The crystal structures of the perovskites La1/3NbO3 and La1/3TaO3 were studied between 10 and 350 K using high-resolution neutron powder diffraction and compared with their radio-frequency dielectric response over the same temperature range. The structure of La1/3NbO3 remains orthorhombic Cmmm, while La1/3TaO3 undergoes continuous transition from the high-temperature tetragonal P4/mmm to Cmmm phase at about 220 K. This transition is tricritical in nature and accompanied by no dielectric anomaly. In La1/3NbO3, the frequency-dependent peak of the dielectric permittivity is associated with an atypical increase in the lattice parameters below about 80 K.
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61.66.Fn Inorganic compounds
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)

Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films

Joo-Won Yoon, Shun-ichiro Ohmi, Byung-Eun Park, and Hiroshi Ishiwara

Appl. Phys. Lett. 93, 162904 (2008); http://dx.doi.org/10.1063/1.2970085 (3 pages) | Cited 4 times

Online Publication Date: 23 October 2008

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Oxygen plasma etching characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer films are investigated. It was found in MFM (M: metal; F: ferroelectric) capacitors that plasma damage effects to the ferroelectric properties were insignificant when Au metal masks were used. On the contrary, C-V (capacitance versus voltage) characteristics were significantly degraded in plasma-etched MFIS (I: insulator; S: semiconductor) diodes. The origin of this phenomenon is speculated to be degradation of the SiO2/Si interface by energetic oxygen ions and then mixing of Kr gas to the oxygen plasma is attempted to decrease the plasma damage.
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81.65.Cf Surface cleaning, etching, patterning
52.77.Bn Etching and cleaning
77.80.-e Ferroelectricity and antiferroelectricity
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
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