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20 Oct 2008

Volume 93, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 93, 161101 (2008); http://dx.doi.org/10.1063/1.3000630 (3 pages)

E. Mujagić, L. K. Hoffmann, S. Schartner, M. Nobile, W. Schrenk, M. P. Semtsiv, M. Wienold, W. T. Masselink, and G. Strasser
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Low divergence single-mode surface emitting quantum cascade ring lasers

E. Mujagić, L. K. Hoffmann, S. Schartner, M. Nobile, W. Schrenk, M. P. Semtsiv, M. Wienold, W. T. Masselink, and G. Strasser

Appl. Phys. Lett. 93, 161101 (2008); http://dx.doi.org/10.1063/1.3000630 (3 pages) | Cited 17 times

Online Publication Date: 20 October 2008

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We describe the fabrication and operation of surface emitting second-order distributed feedback quantum cascade ring lasers. The devices exhibit single-mode emission at a wavelength of 3.95 μm with a side mode suppression ratio of 25 dB. A linear tuning coefficient of 0.13 cm−1/K is observed. A single longitudinal mode in the ring shaped resonator results in a highly symmetric far-field pattern and a low beam divergence, represented by a full width at half maximum of ∼ 3°. Based on these characteristics the presented compact coherent light source may find its way into today’s midinfrared spectroscopy applications.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.86.+b Optical workshop techniques

Superconducting single photon detectors with minimized polarization dependence

S. N. Dorenbos, E. M. Reiger, N. Akopian, U. Perinetti, V. Zwiller, T. Zijlstra, and T. M. Klapwijk

Appl. Phys. Lett. 93, 161102 (2008); http://dx.doi.org/10.1063/1.3003579 (3 pages) | Cited 12 times

Online Publication Date: 20 October 2008

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Superconducting single photon detectors are usually fabricated in such a way that a polarization dependence of the quantum efficiency is inevitable. Their meandering nanowire leads to a preferential polarization absorption, this is undesired in experiments where the polarization degree of freedom is used. We have designed two new geometries for which the polarization dependence is minimized: a detector with two meander-type parts oriented perpendicular with respect to each other and a spiraling detector. Focusing on individual parts of the detectors shows polarization dependent quantum efficiency. When the detectors are illuminated uniformly, the maximum polarization dependent quantum efficiency cannot be achieved, however, the polarization dependence of the quantum efficiency is minimized.
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85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels

C. Y. Jin, H. Y. Liu, Q. Jiang, M. Hopkinson, and O. Wada

Appl. Phys. Lett. 93, 161103 (2008); http://dx.doi.org/10.1063/1.3003874 (3 pages) | Cited 4 times

Online Publication Date: 20 October 2008

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We have developed a simple theoretical model to account for the effects of different p-doping levels on the temperature-dependent performance of InAs/GaAs self-assembled quantum dot (QD) lasers. An assumption of equal occupation probabilities among QDs has been applied for operating conditions near the lasing threshold. Theoretical results indicate that there is an optimum p-doping region, which can provide the lowest temperature dependence of lasing threshold at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate

D. Zhou, R. Piron, F. Grillot, O. Dehaese, E. Homeyer, M. Dontabactouny, T. Batte, K. Tavernier, J. Even, and S. Loualiche

Appl. Phys. Lett. 93, 161104 (2008); http://dx.doi.org/10.1063/1.3005194 (3 pages) | Cited 7 times

Online Publication Date: 20 October 2008

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InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55 μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Aberration-free imaging for light and electrons

B. Fluegel and A. Mascarenhas

Appl. Phys. Lett. 93, 161105 (2008); http://dx.doi.org/10.1063/1.3005582 (3 pages) | Cited 1 time

Online Publication Date: 20 October 2008

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The equations for refraction of either the extraordinary wave of light or the wavefunction of an electron at a planar boundary between two misoriented uniaxially anisotropic materials are shown via raytracing to yield a transverse displacement of the object point. The displacement is independent of ray incidence angle and is thus free from spherical aberration, yielding a perfect virtual image which can have applications in birefringent optics. The general conditions for this aberration-free imaging are found to be identical to those required for amphoteric total refraction.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.25.Lc Birefringence
42.30.-d Imaging and optical processing
42.15.Dp Wave fronts and ray tracing
41.75.Fr Electron and positron beams

Fabrication and characterization of ultrafast carbon nanotube saturable absorbers for solid-state laser mode locking near 1 μm

Jong Hyuk Yim, Won Bae Cho, Soonil Lee, Yeong Hwan Ahn, Kihong Kim, Hanjo Lim, Günter Steinmeyer, Valentin Petrov, Uwe Griebner, and Fabian Rotermund

Appl. Phys. Lett. 93, 161106 (2008); http://dx.doi.org/10.1063/1.2999593 (3 pages) | Cited 35 times

Online Publication Date: 21 October 2008

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Transmitting and reflecting ultrafast saturable absorbers based on single-walled carbon nanotubes are developed that are applicable for stable mode locking of bulk solid-state lasers operating near 1 μm. For fabrication of these saturable absorbers, relatively simple spin coating and spray methods are employed. Parameters important for stable mode locking, such as transient nonlinear absorption, saturation fluence, and recovery time, are investigated by nonlinear transmission and time-resolved pump-probe measurements near 1 μm. Typical modulation depths and recovery times amount to ∼ 0.21%–0.25% and <1 ps, respectively.
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42.60.Fc Modulation, tuning, and mode locking
81.07.De Nanotubes
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption

Millisecond Brillouin scattering spectroscopy

Yasuo Minami, Takeshi Yogi, and Keiji Sakai

Appl. Phys. Lett. 93, 161107 (2008); http://dx.doi.org/10.1063/1.3002301 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2008

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The millisecond Brillouin spectroscopy was developed and applied for the real-time observation of phonons in solid and gas materials. The Brillouin spectra of solid (polymethylmethacrylate) and gas (air) at 300 K are observed over the wave number range from k = 8.1×104 m−1 to k = 5.3×105 m−1. The measurement time is only 100 ms, which is by far shorter than that for the conventional method from several minutes to several hours. The technique would provide us with a useful tool for the dynamic observation of thermal phonons in solid and gas.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.65.Es Stimulated Brillouin and Rayleigh scattering
51.70.+f Optical and dielectric properties

Native-oxide-confined high-index-contrast λ = 1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers

D. Liang, D. C. Hall, J. Y.-T. Huang, G. Tsvid, and L. J. Mawst

Appl. Phys. Lett. 93, 161108 (2008); http://dx.doi.org/10.1063/1.3001587 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2008

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High performance native-oxide-confined high-index-contrast (HIC) ridge waveguide (RWG) diode lasers are fabricated in a strain-compensated In0.4Ga0.6As single quantum well structure by employing a deep dry etch plus nonselective O2-enhanced wet thermal oxidation process. The thermal native oxide grown on the etch-exposed RWG sidewalls of the Al0.74Ga0.26As waveguide cladding layers and GaAs core with GaAsP–InGaAs quantum well provides both strong optical and electrical confinements for the active region. Due to a smoothing of sidewall roughness by the O2-enhanced oxidation, the lasers exhibit a low internal loss in αi = 7.2 cm−1 for a w = 7.2 μm narrow stripe HIC RWG structure, only 53% larger than that of w = 87.2 μm broad-area devices, enabling their room temperature operation at a low 300 A/cm2 threshold current density.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
68.47.Fg Semiconductor surfaces
81.65.Mq Oxidation

Label-free porous silicon membrane waveguide for DNA sensing

Guoguang Rong, Judson D. Ryckman, Raymond L. Mernaugh, and Sharon M. Weiss

Appl. Phys. Lett. 93, 161109 (2008); http://dx.doi.org/10.1063/1.3005620 (3 pages) | Cited 26 times

Online Publication Date: 22 October 2008

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We report a label-free porous silicon membrane waveguide biosensor based on a 1 μm thick freestanding porous silicon film with 100 nm diameter pores. The sensor operates in the Kretschmann configuration. A formvar polymer film provides robust adhesion of the porous silicon membrane to a rutile prism and enables confinement of guided modes in the porous silicon membrane. Attenuated total reflectance measurements are performed, along with theoretical calculations, to fully characterize the waveguide. The sensitivity of the sensor is investigated through DNA hybridization in the porous silicon membrane. A detection limit of 42 nM was demonstrated for 24-base pair DNA oligonucleotides.
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87.85.-d Biomedical engineering
87.85.J- Biomaterials
87.85.Rs Nanotechnologies-applications

Surface-emitting terahertz quantum cascade laser source based on intracavity difference-frequency generation

Christian Pflügl, Mikhail A. Belkin, Qi Jie Wang, Markus Geiser, Alexey Belyanin, Milan Fischer, Andreas Wittmann, Jérôme Faist, and Federico Capasso

Appl. Phys. Lett. 93, 161110 (2008); http://dx.doi.org/10.1063/1.3009198 (3 pages) | Cited 8 times

Online Publication Date: 24 October 2008

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We report a surface-emitting terahertz source based on intracavity difference-frequency generation in dual-wavelength midinfrared quantum cascade lasers with integrated giant second-order nonlinear susceptibility. The terahertz light is coupled out of the waveguide by a second-order grating etched into the laser ridges. In contrast to sources where the difference-frequency radiation is extracted from the facet, this approach enables extraction of the terahertz emission from the whole length of the device even when the coherence length is small.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
42.79.Dj Gratings
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