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20 Oct 2008

Volume 93, Issue 16, Articles (16xxxx)

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Appl. Phys. Lett. 93, 161101 (2008); http://dx.doi.org/10.1063/1.3000630 (3 pages)

E. Mujagić, L. K. Hoffmann, S. Schartner, M. Nobile, W. Schrenk, M. P. Semtsiv, M. Wienold, W. T. Masselink, and G. Strasser
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The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter

K.-F. Chen and J. G. Eden

Appl. Phys. Lett. 93, 161501 (2008); http://dx.doi.org/10.1063/1.2981573 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2008

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A microplasma transistor has been realized by injecting electrons into the sheath of a rare gas plasma with a low voltage (|Vb|<25 V), controllable electron emitter. Integrating a solid state emitter with a 500 μm diam. cylindrical microcavity plasma yields a three terminal current-controlled device capable of modulating the conduction current and light intensity generated by the microplasma. For an emitter voltage of Vb = −10 V, the rms charge carried by the conduction current of a Ne microplasma is tripled relative to the value measured for no current injection. Similarly, the wavelength-integrated visible emission is increased by 2.7 and 4 dB for Vb = −5 and −25 V, respectively. From the continuity equation for charged particle flux in the sheath, the electron density at the edge of the sheath is determined to be ns = (3±1)×1012 cm−3 for an electron temperature in the 1–5 eV range. Energizing the electron emitter is estimated to reduce the ratio of the ion to electron number densities at the cathode surface from 25 to 14. A parameter βp, defined as the microplasma transistor conductance normalized to that for the conventional plasma device (i.e., Vb = 0), is introduced and found to be ∼ 40 for this unoptimized device when |Vb| = 5 V.
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52.75.-d Plasma devices
52.40.Kh Plasma sheaths
52.25.-b Plasma properties
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Observation of near total polarization in the ultrafast laser ablation of Si

Yaoming Liu, Sima Singha, Tana E. Witt, Yongtao Cheng, and Robert J. Gordon

Appl. Phys. Lett. 93, 161502 (2008); http://dx.doi.org/10.1063/1.3000966 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2008

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We report nearly completely polarized emission from the plasma produced in the femtosecond ablation of Si(111). Pairs of ultrashort laser pulses were focused onto the target in air, and the polarization spectrum was measured as a function of energy, pulse delay, and polarization state of the laser. When the laser was focused on the surface, the fluorescence continuum was strongly polarized, whereas discrete lines appeared as minima in the polarization spectrum. Under this focusing condition, the continuum polarization increased with pulse delay and decreased with pulse energy and fluorescence wavelength, with >95% polarization in the ultraviolet.
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79.20.Ds Laser-beam impact phenomena
42.25.Ja Polarization
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
52.38.Mf Laser ablation
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