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27 Oct 2008

Volume 93, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 93, 172501 (2008); http://dx.doi.org/10.1063/1.3005561 (3 pages)

Yan Wang, X. F. Han, and X.-G. Zhang
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Converse magnetoelectric coupling in multilayer capacitors

C. Israel, S. Kar-Narayan, and N. D. Mathur

Appl. Phys. Lett. 93, 173501 (2008); http://dx.doi.org/10.1063/1.3009565 (3 pages) | Cited 13 times

Online Publication Date: 29 October 2008

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We report electrically induced changes of 20% in both the remnant magnetization and the coercive field of a magnetoelectric heterostructure. This heterostructure is an industrially produced multilayer capacitor comprising Ni-based magnetostrictive electrodes sandwiching a BaTiO3-based dielectric that is ferroelectric and therefore piezoelectric. Both magnetization and strain are shown to be hysteretic with applied electric field. These inexpensive capacitors might find use as electrically controlled ferromagnets.
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75.80.+q Magnetomechanical effects, magnetostriction
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Dd Nonmetallic ferromagnetic materials

Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells

S. Gatz, H. Plagwitz, P. P. Altermatt, B. Terheiden, and R. Brendel

Appl. Phys. Lett. 93, 173502 (2008); http://dx.doi.org/10.1063/1.3009571 (3 pages) | Cited 12 times

Online Publication Date: 29 October 2008

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The thermal stability of amorphous silicon/silicon nitride double layer surface passivation of p-type and n+-type crystalline surfaces is investigated for different deposition temperatures of the silicon nitride capping layer. An increase from 300 to 400 °C results in a significant improvement of the thermal stability of the surface passivation. The minimum surface recombination velocity achieved on p-type (1.5 Ω cm) silicon wafers is 0.75±0.6 cm/s and remains at 10±0.5 cm/s after 30 min annealing at 500 °C.
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84.60.Jt Photoelectric conversion
81.65.Rv Passivation
82.45.Bb Corrosion and passivation
61.72.Cc Kinetics of defect formation and annealing

Theory of analyzing free energy losses in solar cells

R. Brendel, S. Dreissigacker, N.-P. Harder, and P. P. Altermatt

Appl. Phys. Lett. 93, 173503 (2008); http://dx.doi.org/10.1063/1.3006053 (3 pages) | Cited 5 times

Online Publication Date: 29 October 2008

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We make up the free energy balance for thermalized electrons and holes in a solar cell. Equations for the loss rates of free energy due to recombination and transport of carriers are derived. The well known expression for Joule heat dissipation also holds for the free energy loss by diffusive transport. All loss rates have units of mW/cm2. Thus transport losses become directly comparable in magnitude to recombination losses. The latter are usually quantified in mA/cm2 rather than mW/cm2. The impact of various loss mechanisms on the power output of the cell, also in mW/cm2, becomes directly apparent.
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84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators

K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost, V. Cimalla, O. Ambacher, R. Stephan, and M. A. Hein

Appl. Phys. Lett. 93, 173504 (2008); http://dx.doi.org/10.1063/1.3002296 (3 pages) | Cited 7 times

Online Publication Date: 29 October 2008

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Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates. The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act as back electrode for the piezoelectric active layer. The fundamental mode as well as higher order resonant modes of flexural vibration has been excited piezoelectrically and analyzed using optical laser–Doppler vibrometry. The experimental investigations were carried out under normal ambient conditions. The specific piezoelectric actuation scheme is described and the dependence of the measured resonant frequencies between 0.2 and 8.1 MHz on geometry and material parameters is investigated.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
77.65.Fs Electromechanical resonance; quartz resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

MgxZn1−xO-based photodetectors covering the whole solar-blind spectrum range

Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan

Appl. Phys. Lett. 93, 173505 (2008); http://dx.doi.org/10.1063/1.3002371 (3 pages) | Cited 31 times

Online Publication Date: 29 October 2008

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A series of MgxZn1−xO thin films has been prepared by metalorganic chemical vapor deposition and metal-semiconductor-metal structured ultraviolet photodetectors are fabricated from these films. The cutoff wavelengths of the photodetectors can cover the whole solar-blind spectrum range (220–280 nm) by varying Mg content in the MgxZn1−xO thin films. As a representative, the photodetector fabricated from Mg0.52Zn0.48O shows an ultraviolet/visible rejection ratio of about four orders of magnitude, and the dark current is 15 pA at 10 V bias. These results demonstrate that high-performance photodetectors operating in the whole solar-blind spectrum range can be realized in MgxZn1−xO films.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Electrically driven single quantum dot emitter operating at room temperature

R. Arians, A. Gust, T. Kümmell, C. Kruse, S. Zaitsev, G. Bacher, and D. Hommel

Appl. Phys. Lett. 93, 173506 (2008); http://dx.doi.org/10.1063/1.3009302 (3 pages) | Cited 7 times

Online Publication Date: 29 October 2008

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We present a green emitting single quantum dot light emitter integrated into a resonant-cavity diode design. Most important, electroluminescence stemming from one individual quantum dot is obtained at room temperature with a surprisingly low operation voltage of 2.6 V. This demonstrates that our single quantum dot device is ideally suited for electrically driven nonclassical light generation under ambient conditions.
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85.60.Jb Light-emitting devices

Diblock copolymer based self-assembled nanomagnetoelectric

Shenqiang Ren, Robert M. Briber, and Manfred Wuttig

Appl. Phys. Lett. 93, 173507 (2008); http://dx.doi.org/10.1063/1.3005558 (3 pages) | Cited 6 times

Online Publication Date: 31 October 2008

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A magnetoelectric (ME) composite with controlled nanostructures is synthesized using coassembly of two inorganic precursors with a block copolymer. This solution processed material consists of hexagonally arranged ferromagnetic cobalt ferrite [CoFe2O4 (CFO)] nano cylinders within a matrix of ferroelectric lead zirconium titanate [Pb1.1(Zr0.53Ti0.47)O3 (PZT)] when thin films were prepared by spin coating. The initial magnetic permeability of the self-assembled CFO/PZT nanocomposite changes by a factor of 5 through the application of 2.5 V. This work also demonstrates that a block copolymer can be used to simultaneously template two compound inorganic phases to form a nanoscale composite.
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81.16.Dn Self-assembly
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction

Thermally excited tunneling from a metastable electronic state in a single-Cooper-pair transistor

D. G. Rees, P. Glasson, L. R. Simkins, E. Collin, V. Antonov, P. G. Frayne, P. J. Meeson, and M. J. Lea

Appl. Phys. Lett. 93, 173508 (2008); http://dx.doi.org/10.1063/1.3012374 (3 pages) | Cited 2 times

Online Publication Date: 31 October 2008

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Metastable electron traps and two-level systems (TLSs) are common in solid-state devices and lead to background charge movement and charge noise in single-electron and single-Cooper-pair transistors. We present measurements of the real-time capture and escape of individual electrons in metastable trapped states at very low temperatures, leading to charge offsets close to 1e. The charge movement exhibits thermal excitation to a hysteretic tunneling transition. The temperature dependence and hysteresis can be explained by the coupling of a TLS to a quasiparticle trap.
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85.35.Gv Single electron devices
85.25.-j Superconducting devices

Local liquid crystal alignment on patterned micrograting structures photofabricated by two photon excitation direct laser writing

Chee Heng Lee, Hiroyuki Yoshida, Yusuke Miura, Akihiko Fujii, and Masanori Ozaki

Appl. Phys. Lett. 93, 173509 (2008); http://dx.doi.org/10.1063/1.2952765 (3 pages) | Cited 4 times

Online Publication Date: 31 October 2008

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The authors demonstrate local alignment of nematic liquid crystal through the fabrication of local micrograting structures by curing an ultraviolet curable material via a two-photon excitation laser-lithography process. A local twisted-nematic region was prepared using one rubbed and one fabricated micrograting surface and the resulting cell was observed with a polarizing optical microscope. The polarization optical micrographs of the locally fabricated region suggest that liquid crystal molecules align parallel to the grating structure and that local alignment is achieved. We evaluate the anchoring energies of the fabricated microgratings by the torque balance method.
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61.30.-v Liquid crystals
42.79.Dj Gratings

An electron microscopic investigation of structural variation of V2O5 fibers after working as ethanol sensors

Ning Ding, Shuhua Liu, Chunhua Chen, and Ingo Lieberwirth

Appl. Phys. Lett. 93, 173510 (2008); http://dx.doi.org/10.1063/1.3009304 (2 pages) | Cited 1 time

Online Publication Date: 31 October 2008

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This is a study of V2O5 fibers as ethanol sensors. The variation in the V2O5 electronic state and its structure after reaction with ethanol are investigated by electron energy-loss spectroscopy and electron diffraction. Results show that after reaction the oxidation state of vanadium in V2O5 is reduced to +4, and the crystallinity of V2O5 is completely destroyed, forming amorphous VO2 nanoparticles. High-resolution transmission electron microscopy shows that the diameter of amorphous VO2 nanoparticles is about 4 nm.
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64.70.Nd Structural transitions in nanoscale materials
73.22.-f Electronic structure of nanoscale materials and related systems
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
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