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27 Oct 2008

Volume 93, Issue 17, Articles (17xxxx)

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Appl. Phys. Lett. 93, 172501 (2008); http://dx.doi.org/10.1063/1.3005561 (3 pages)

Yan Wang, X. F. Han, and X.-G. Zhang
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Diamondoids as low-κ dielectric materials

W. A. Clay, T. Sasagawa, M. Kelly, J. E. Dahl, R. M. K. Carlson, N. Melosh, and Z.-X. Shen

Appl. Phys. Lett. 93, 172901 (2008); http://dx.doi.org/10.1063/1.3010379 (3 pages) | Cited 7 times

Online Publication Date: 28 October 2008

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The dielectric properties of several diamondoids are investigated in theory and experiment. The dielectric constant (κ) is experimentally evaluated from cavity microwave measurements, while the theoretical value is obtained from first principles calculations based on the density functional theory. The results show that the diamondoids have low dielectric constants in the range of 2.46–2.68, less than half of that of bulk diamond. Due to their high thermal stability and outstanding mechanical and insulating properties, diamondoids are excellent candidates for low-κ dielectric applications.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.40.Az Waveguides, transmission lines, striplines
42.82.Et Waveguides, couplers, and arrays
71.15.-m Methods of electronic structure calculations
42.79.Gn Optical waveguides and couplers
42.81.Qb Fiber waveguides, couplers, and arrays

Evidence of magnetodielectric coupling in multiferroic Pb(Fe0.5Nb0.5)O3 ceramics from ferroelectric measurements and electron paramagnetic resonance

Reynaldo Font, Guillermo Alvarez, Oscar Raymond, Jorge Portelles, and Jesús M. Siqueiros

Appl. Phys. Lett. 93, 172902 (2008); http://dx.doi.org/10.1063/1.3006433 (3 pages) | Cited 4 times

Online Publication Date: 28 October 2008

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Magnetodielectric coupling effects of single phase multiferroic Pb(Fe0.5Nb0.5)O3 ceramics have been studied using standard ferroelectric measurements and electron paramagnetic resonance (EPR). Changes in the electrical polarization behavior were observed in the paramagnetic to weakly magnetized antiferromagnetic transition near 103 K associated with a rhombohedral to monoclinic symmetry reduction. The analysis of changes in the EPR spectral parameters confirms the transition from paramagnetic to weakly magnetized antiferromagnetic and reveals noticeable anomalies in the high temperature region near the ferroelectric-paraelectric transition (383 K), which are correlated with the tetragonal-to-cubic symmetry change and the characteristic diffuse phase transition of this material.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Dd Nonmetallic ferromagnetic materials
77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
76.30.-v Electron paramagnetic resonance and relaxation

Ti3SiC2 material: An application for electromagnetic interference shielding

Suilin Shi, Lingzhen Zhang, and Junshou Li

Appl. Phys. Lett. 93, 172903 (2008); http://dx.doi.org/10.1063/1.3009200 (3 pages) | Cited 4 times

Online Publication Date: 28 October 2008

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Ti3SiC2 was prepared by hot-pressing sintering. The dielectric permittivity and electromagnetic interference (EMI) shielding effectiveness (SE) are measured for the Ti3SiC2 material and pure titanium (Ti) metal in the frequency range of 8.2–18 GHz (X-band and Ku-band). The results show that Ti3SiC2 material exhibits high complex permittivities at the measured frequencies. Compared to the EMI-SE achieved by pure Ti metal, an EMI-SE value as high as 35–54 dB has been achieved in the X-band and Ku-band frequencies for Ti3SiC2 material, which suggests that it should be an effective EMI shielding material for structural applications.
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77.22.Ch Permittivity (dielectric function)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Enhanced electrical properties of atomic layer deposited La2O3 thin films with embedded ZrO2 nanocrystals

K. B. Jinesh, J. H. Klootwijk, Y. Lamy, R. Wolters, E. Tois, M. Tuominen, F. Roozeboom, and W. F. A. Besling

Appl. Phys. Lett. 93, 172904 (2008); http://dx.doi.org/10.1063/1.3009202 (3 pages) | Cited 2 times

Online Publication Date: 28 October 2008

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The deposition of alternating (sub)monolayers of lanthanum oxide (La2O3) and zirconium oxide (ZrO2) by atomic layer deposition has been carried out to create uniform LayZr1−yOx mixed oxide films. However, spontaneous nucleation of ZrO2 nanocrystals occurs during deposition within an amorphous La2O3 matrix. Such ZrO2 embedded La2O3 films exhibit low leakage currents in combination with higher electric breakdown fields and higher dielectric permittivities than the pure lanthanum and zirconium oxide films. The possible scenarios that account for this enhanced electric performance of these nanocluster-embedded dielectric thin films are explained.
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77.55.-g Dielectric thin films
73.61.Ng Insulators
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ch Permittivity (dielectric function)
77.22.Jp Dielectric breakdown and space-charge effects

Piezoelectric response and origin in (001) Pb(Mg1/3Nb2/3)0.70Ti0.30O3 crystal

C.-S. Tu, C.-M. Hsieh, V. Hugo Schmidt, R. R. Chien, and H. Luo

Appl. Phys. Lett. 93, 172905 (2008); http://dx.doi.org/10.1063/1.3012384 (3 pages) | Cited 7 times

Online Publication Date: 30 October 2008

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Converse and direct piezoelectric coefficients (d33C and d33D) of (001)-cut Pb(Mg1/3Nb2/3)0.70Ti0.30O3 (PMN-30%PT) single crystals have been investigated as a function of poling electric (E) field. E-field-dependent domain structures were observed by using a polarizing microscope. Both d33C and d33D exhibit a rapid increase at E = 1–2 kV/cm and reach maxima at E = 2.5–4 kV/cm. This study suggests that polarization rotation from rhombohedral to monoclinic MA phases plays an important role while the high piezoelectric response builds up. Overpoling phenomenon evidenced by a sudden reduction in piezoelectric coefficient with increasing field is very sensitive to Ti content.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.65.-j Piezoelectricity and electromechanical effects

Effects of Bi2Ti2O7 buffer layer on memory properties of BiFe0.95Mn0.05O3 thin film

C. H. Yang, G. D. Hu, Z. Wen, and H. L. Yang

Appl. Phys. Lett. 93, 172906 (2008); http://dx.doi.org/10.1063/1.3013564 (3 pages) | Cited 4 times

Online Publication Date: 31 October 2008

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BiFe0.95Mn0.05O3 (BFMO) thin films with and without Bi2Ti2O7 (BTO) buffer layer were fabricated on p-type Si (111) substrates by metal organic decomposition. The maximum memory window of BFMO/Si is only 0.3 V due to the severe charge injection. In contrast, the larger memory windows are 0.8 and 2.4 V, respectively, for BFMO deposited on as-deposited BTO/Si and annealed BTO/Si. More importantly, the memory window of BFMO/annealed BTO/Si is not affected by changing voltage ramp rate and frequency at ±6 V. The BFMO also shows much reduced leakage current by using an annealed BTO buffer layer.
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75.70.Ak Magnetic properties of monolayers and thin films
75.50.Cc Other ferromagnetic metals and alloys
68.55.aj Insulators
81.40.Gh Other heat and thermomechanical treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

In situ study of surface reactions of atomic layer deposited LaxAl2−xO3 films on atomically clean In0.2Ga0.8As

F. S. Aguirre-Tostado, M. Milojevic, B. Lee, J. Kim, and R. M. Wallace

Appl. Phys. Lett. 93, 172907 (2008); http://dx.doi.org/10.1063/1.3009303 (3 pages) | Cited 12 times

Online Publication Date: 31 October 2008

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The surface reactions of LaxAl2−xO3 ultrathin films deposited on atomically clean In0.2Ga0.8As by atomic layer deposition are studied by in situ high resolution x-ray photoelectron spectroscopy. Using 1:2 alternating cycles of La2O3 and Al2O3 results in a La:Al concentration ratio of 1:10. We found that the LaxAl2−xO3/InGaAs interface consisted of interfacial Ga-suboxides and As–As bonds but no As- or In-oxides were detected. This suggests an interface formed by Ga–O–Al and Ga–O–La bonds from the precursor reaction.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.ag Semiconductors
77.55.-g Dielectric thin films
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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