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10 Nov 2008

Volume 93, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 93, 192501 (2008); http://dx.doi.org/10.1063/1.3013857 (3 pages)

O. Hellwig, A. Moser, E. Dobisz, Z. Z. Bandic, H. Yang, D. S. Kercher, J. D. Risner-Jamtgaard, D. Yaney, and E. E. Fullerton
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Single shot measurement of the lifetime of a trapped electron in the gate dielectric of a high-k field effect transistor

M. Ziaur Rahman Khan, D. G. Hasko, M. S. M. Saifullah, and M. E. Welland

Appl. Phys. Lett. 93, 193501 (2008); http://dx.doi.org/10.1063/1.3013576 (3 pages) | Cited 2 times

Online Publication Date: 10 November 2008

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The transient behavior of a trapped electron in the TiO2 sol-gel based gate dielectric layer of a silicon-on-insulator metal-oxide-semiconductor field effect transistor is investigated. Defects in this dielectric layer give rise to microwave resonances that are electrically detected via the channel current. The lifetime of the excited state is inferred from the quality factor of the resonance. A single shot measurement, carried out on the same resonance, is used to characterize the transient behavior and to directly measure the lifetime of the excited state. Possible applications of transient measurements on high-k dielectric layers are discussed.
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85.30.Tv Field effect devices

High-frequency behavior of the Datta–Das spin transistor

H. López, X. Oriols, J. Suñé, and X. Cartoixà

Appl. Phys. Lett. 93, 193502 (2008); http://dx.doi.org/10.1063/1.3021073 (3 pages)

Online Publication Date: 10 November 2008

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We have studied the high-frequency behavior and the ultimate limiting factor to the cutoff frequency for the Datta–Das spin transistor using device Monte Carlo simulations. We have found that the maximum frequency of operation is not related to intrinsic parameters to the spin of the carriers, such as the Larmor frequency or the spin lifetime, but to the transit time through the channel.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

Correlation between the dipole moment induced at the Slater transition state and the optical dielectric constant of Si and Al compounds

K. Hirose, D. Kobayashi, H. Suzuki, and H. Nohira

Appl. Phys. Lett. 93, 193503 (2008); http://dx.doi.org/10.1063/1.2988191 (3 pages) | Cited 1 time

Online Publication Date: 11 November 2008

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We calculate the difference between the valence charges of the ground state and the Slater transition state for several types of Si compounds and Al compounds. We assume the dipole moment induced by core-hole generation at the Slater transition state to be the product of the valence charge difference and the bond length of the compounds. We find that the calculated dipole moment has a strong linear correlation well with (ε−1)/(ε+2), which is deduced from experimental values of the optical dielectric constant ε.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.22.Ch Permittivity (dielectric function)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Rahul Suri, Bongmook Lee, Daniel J. Lichtenwalner, Nivedita Biswas, and Veena Misra

Appl. Phys. Lett. 93, 193504 (2008); http://dx.doi.org/10.1063/1.3007978 (3 pages) | Cited 14 times

Online Publication Date: 11 November 2008

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Properties of ultrathin HfAlO gate dielectrics on sulfur-passivated p-GaAs were investigated using capacitance-voltage and current-voltage measurement techniques and angle-resolved x-ray photoelectron spectroscopy. By optimizing the individual layer thickness of atomic-layer deposited Al2O3 and HfO2 and the postdeposition anneal (PDA) conditions, a low equivalent oxide thickness of 1.6 nm, low gate leakage of 2.6×10−3 A/cm2 at Vg = Vfb−1 V, and excellent frequency dispersion characteristics were obtained. No interfacial As–O bonding and only a small amount of Ga–O bonding were detected after PDA at 500 °C. These results reveal a good quality dielectric interface on GaAs without an additional interface passivation layer.
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84.32.Tt Capacitors
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation

A microstrip tunable negative refractive index metamaterial and phase shifter

P. He, J. Gao, C. T. Marinis, P. V. Parimi, C. Vittoria, and V. G. Harris

Appl. Phys. Lett. 93, 193505 (2008); http://dx.doi.org/10.1063/1.3025303 (3 pages) | Cited 6 times

Online Publication Date: 11 November 2008

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A tunable negative refractive index metamaterial and miniature phase shifter have been designed and fabricated in a microstrip configuration for applications in radio frequency integrated circuits. The metamaterial consists of plasmonic copper wires and yttrium iron garnet slabs having a low insertion loss of 5 dB at the center of the transmission band. The yttrium iron garnet material enables the magnetic field tuning of the negative refractive index in a dynamic frequency band from 7.0 to 11.0 GHz. The insertion phase can be tuned by 45° continuously by varying the bias field from 3.8 to 4.6 kOe at 9.0 GHz.
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42.79.-e Optical elements, devices, and systems
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Bz Metals and metallic alloys

The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

J. C. Liao, Y. K. Fang, C. H. Chen, Y. T. Hou, P. F. Hsu, K. C. Lin, K. T. Huang, T. L. Lee, and M. S. Liang

Appl. Phys. Lett. 93, 193506 (2008); http://dx.doi.org/10.1063/1.3025420 (3 pages) | Cited 1 time

Online Publication Date: 11 November 2008

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This paper reports a comprehensive study on the influence of nitrogen incorporation on high-k (HK) device performance and reliability. Two approaches including dielectric nitrogen annealing and interfacial layer (IL) nitrogen annealing are investigated. It is found the HK nitrogen annealing is a better solution for the trade-off between mobility and inversion oxide thickness than IL annealing. The positive bias temperature instability characteristic is improved by HK annealing. However, the HK nitrogen annealing lowers the barrier of dielectric and thus results in an abnormally high leakage current.
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85.30.Tv Field effect devices

High performance germanium N+/P and P+/N junction diodes formed at low Temperature ( ⩽ 380 °C) using metal-induced dopant activation

Jin-Hong Park, Duygu Kuzum, Munehiro Tada, and Krishna C. Saraswat

Appl. Phys. Lett. 93, 193507 (2008); http://dx.doi.org/10.1063/1.3025849 (3 pages) | Cited 8 times

Online Publication Date: 11 November 2008

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We demonstrate high performance Ge N+/P and P+/N junction diodes at sub-380 °C. Very low resistivity (2.2×10−4 Ω cm) and shallow (92 nm) junction with high degree of dopant activation are achieved especially in N+/P junction formed at 360 °C on Ge epitaxially grown on Si using complementary metal-oxide semiconductor process compatible-metal (Co) induced dopant activation technique. Excellent diode characteristics having ∼ 2×104 on/off ratio and high forward current density (221 A/cm2 for N+/P and 135 A/cm2 for P+/N at ∣VF∣ = 2 V) are obtained in N+/P and P+/N junction diodes fabricated at 380 °C on bulk Ge with a surface passivated layer [GeO2+low temperature chemical vopor deposition SiO2 (LTO)] isolation.
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85.30.Kk Junction diodes
61.72.uf Ge and Si

Drop-on-demand printing of conductive ink by electrostatic field induced inkjet head

Jaeyong Choi, Yong-Jae Kim, Sukhan Lee, Sang Uk Son, Han Seo Ko, Vu Dat Nguyen, and Doyoung Byun

Appl. Phys. Lett. 93, 193508 (2008); http://dx.doi.org/10.1063/1.3020719 (3 pages) | Cited 21 times

Online Publication Date: 12 November 2008

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Recently, inkjet printing technology has become crucial in many industrial fabrication fields mainly due to its advantages of noncontact and fast pattern generation. In this paper, we investigate an electrostatic field induced inkjet printing system, which is based on an electrohydrodynamic process, for drop-on-demand jetting. In order to locate the optimal jetting conditions, we tested jetting performance for various bias voltages and pulse signals. To investigate the characteristics of drop-on-demand operation and micropatterning, we used conductive silver ink and examined the drops and lines patterned on a substrate.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
47.85.M- Material processing flows; industrial applications
47.65.-d Magnetohydrodynamics and electrohydrodynamics

High-speed operation of GaN/AlGaN quantum cascade detectors at λ ≈ 1.55 μm

A. Vardi, N. Kheirodin, L. Nevou, H. Machhadani, L. Vivien, P. Crozat, M. Tchernycheva, R. Colombelli, F. H. Julien, F. Guillot, C. Bougerol, E. Monroy, S. Schacham, and G. Bahir

Appl. Phys. Lett. 93, 193509 (2008); http://dx.doi.org/10.1063/1.3021376 (3 pages) | Cited 20 times

Online Publication Date: 13 November 2008

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We demonstrate room-temperature, high-speed operation of GaN/AlGaN quantum cascade detectors. The devices are processed as square mesas with 50 Ω coplanar access lines. Frequency response measurements were performed under illumination by a modulated laser diode emitting at λ = 1.55 μm. The electrical response exhibits a first-order filter frequency response. For 17×17 μm2 (25×25 μm2) detectors the −3 dB cutoff frequency is 11.4 GHz (6.5 GHz). S-parameter analysis confirms that the cutoff frequency is extrinsically limited and that the speed of the device can be further increased by reducing the device size.
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42.55.Px Semiconductor lasers; laser diodes
06.60.Jn High-speed techniques (microsecond to femtosecond)

N2O-grown oxides/4H-SiC (0001), (03math8), and (11math0) interface properties characterized by using p-type gate-controlled diodes

Masato Noborio, Jun Suda, and Tsunenobu Kimoto

Appl. Phys. Lett. 93, 193510 (2008); http://dx.doi.org/10.1063/1.3028016 (3 pages) | Cited 3 times

Online Publication Date: 13 November 2008

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The N2O-grown SiO2/4H-SiC (0001), (03math8), and (11math0) interface properties in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been characterized by using gate-controlled diodes. Although the inversion layer is not formed in simple SiC MOS capacitors at room temperature due to its large bandgap, a standard low frequency capacitance-voltage (C-V) curve can be obtained for the gate-controlled diodes, owing to the supply of minority carriers from the source region. From the quasistatic C-V curves measured by using gate-controlled diodes, the interface state density has been evaluated by an original method proposed in this study. The interface state density near the valence band edge evaluated by the method is the lowest at the oxides/4H-SiC (03math8) interface. Comparison with the channel mobility is also discussed.
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85.30.Tv Field effect devices
85.30.Kk Junction diodes

Thermal transpiration in zeolites: A mechanism for motionless gas pumps

Naveen K. Gupta and Yogesh B. Gianchandani

Appl. Phys. Lett. 93, 193511 (2008); http://dx.doi.org/10.1063/1.3025304 (3 pages) | Cited 7 times

Online Publication Date: 14 November 2008

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We explore the use of a naturally occurring zeolite, clinoptilolite, for a chip-scale, thermal transpiration-based gas pump. The nanopores in clinoptilolite enable the required free-molecular flow, even at atmospheric pressure. The pump utilizes a foil heater located between zeolite disks in a plastic package. A 2.3 mm thick zeolite disk generates a typical gas flow rate of 6.6×10−3 cc/min-cm2 with an input power of <300 mW/cm2. The performance is constrained by imperfections in clinoptilolite, which provide estimated leakage apertures of 10.2–13.5 μm/cm2 of flow cross section. The transient response of the pump is studied to quantify nonidealities.
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47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.85.Np Fluidics
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
47.45.Dt Free molecular flows
47.60.Dx Flows in ducts and channels
47.56.+r Flows through porous media

Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors

P. Gaucci, A. Valletta, L. Mariucci, A. Pecora, M. Cuscunà, L. Maiolo, and G. Fortunato

Appl. Phys. Lett. 93, 193512 (2008); http://dx.doi.org/10.1063/1.3027478 (3 pages) | Cited 3 times

Online Publication Date: 14 November 2008

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Drain bias induced threshold voltage variation in short channel polycrystalline silicon (polysilicon) thin-film transistors (TFTs) are investigated, combining experimental measurements and two-dimensional numerical simulations. We show that drain induced barrier lowering and floating body effects, induced by impact ionization, are the main causes of such variations. Field enhanced mechanisms, causing leakage current, tend to mitigate the effect of impact ionization, since they provide an enhanced recombination rate in the high field region. This result is in contrast to what is suggested for silicon-on-insulator devices and also applied to polysilicon TFTs, where leakage current is assumed to contribute to floating body effects.
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85.30.Tv Field effect devices
72.20.Ht High-field and nonlinear effects

Effect of oxide structure on the Fermi-level pinning at metal/Gd2O3 interfaces

E. Lipp, M. Eizenberg, M. Czernohorsky, and H. J. Osten

Appl. Phys. Lett. 93, 193513 (2008); http://dx.doi.org/10.1063/1.3028071 (3 pages) | Cited 4 times

Online Publication Date: 14 November 2008

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The extent of Fermi-level pinning at metal/Gd2O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high-k interfaces.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions

ZnO-based low voltage inverter with low-k/high-k double polymer dielectric layer

Kimoon Lee, Ki-tae Kim, Kwang H. Lee, Gyubaek Lee, Min Suk Oh, Jeong-M. Choi, Seongil Im, Sungjin Jang, and Eugene Kim

Appl. Phys. Lett. 93, 193514 (2008); http://dx.doi.org/10.1063/1.3028093 (3 pages) | Cited 3 times

Online Publication Date: 14 November 2008

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We report on the fabrication of ZnO-based depletion-load-type inverter composed of two n-channel ZnO thin-film transistors (TFTs) with a low-k poly-4-vinylphenol and high-k poly(vinylidene fluoride-trifluoroethylene) double polymer dielectric. One of the two ZnO channels in the inverter was illuminated by 352 nm wavelength ultraviolet so that the illuminated ZnO channel might be depleted. That ZnO-TFT plays as a driver transistor in the inverter set where the original TFT is used as a load one. The both TFTs show the same mobility of ∼ 0.3 cm2/V s and our inverter operates with a voltage gain of ∼ 4 at low supplied voltages (5–7 V), demonstrating a dynamic response of ∼ 20 ms.
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73.61.Ga II-VI semiconductors
85.30.Tv Field effect devices
77.84.Jd Polymers; organic compounds
81.65.-b Surface treatments
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