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10 Nov 2008

Volume 93, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 192501 (2008); http://dx.doi.org/10.1063/1.3013857 (3 pages)

O. Hellwig, A. Moser, E. Dobisz, Z. Z. Bandic, H. Yang, D. S. Kercher, J. D. Risner-Jamtgaard, D. Yaney, and E. E. Fullerton
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B site doping effect on depinning in Pb(Mn1/3Nb1/3Sb1/3)x(Zr0.825Ti0.175)1–xO3 ferroelectric ceramics

Haibo Zhang, Shenglin Jiang, and Yike Zeng

Appl. Phys. Lett. 93, 192901 (2008); http://dx.doi.org/10.1063/1.2978157 (3 pages) | Cited 7 times

Online Publication Date: 10 November 2008

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The polarization-field hysteresis (P-E) loops of Pb(Mn1/3Nb1/3Sb1/3)x(Zr0.825Ti0.175)1–xO3(PMnNSZT) ferroelectric ceramics show pinched shapes instead of the normal squarelike P-E loops in the range of 0.02 ≤ x ≤ 0.1. The pinched loops are assumed to be the result of the pinning effect of the defect dipoles. The absence of the pinched shape P-E loops can be attributed to the depinning resulting from strong p-type conductivity in PMnNSZT ceramics with high doping concentration of x>0.1. The x-ray photoelectron spectrum and x-ray diffraction investigations indicate that the p-type conductivity of the grain boundaries results from the aggregation of excessive B-site doping.
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77.80.Dj Domain structure; hysteresis
61.72.Mm Grain and twin boundaries
79.60.-i Photoemission and photoelectron spectra
77.22.Ej Polarization and depolarization
72.80.Sk Insulators
61.72.up Other materials
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate

C. Y. Kim, S. W. Cho, M.-H. Cho, K. B. Chung, C.-H. An, H. Kim, H. J. Lee, and D.-H. Ko

Appl. Phys. Lett. 93, 192902 (2008); http://dx.doi.org/10.1063/1.2996261 (3 pages) | Cited 17 times

Online Publication Date: 10 November 2008

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The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
79.60.Dp Adsorbed layers and thin films
81.40.Gh Other heat and thermomechanical treatments
61.66.Bi Elemental solids
61.66.Dk Alloys

Application of the thermal step method to space charge measurements in inhomogeneous solid insulating structures: A theoretical approach

Andrei Cernomorcenco and Petru Notingher, Jr.

Appl. Phys. Lett. 93, 192903 (2008); http://dx.doi.org/10.1063/1.3005425 (3 pages) | Cited 2 times

Online Publication Date: 10 November 2008

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The thermal step method is a nondestructive technique for determining electric charge distribution across solid insulating structures. It consists in measuring and analyzing a transient capacitive current due to the redistribution of influence charges when the sample is crossed by a thermal wave. This work concerns the application of the technique to inhomogeneous insulating structures. A general equation of the thermal step current appearing in such a sample is established. It is shown that this expression is close to the one corresponding to a homogeneous sample and allows using similar techniques for calculating electric field and charge distribution.
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06.30.Ka Basic electromagnetic quantities
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
77.22.Jp Dielectric breakdown and space-charge effects

Domain switching contribution to piezoelectric response in BaTiO3 single crystals

Fei Li, Zhuo Xu, Xiaoyong Wei, Xi Yao, and Li Jin

Appl. Phys. Lett. 93, 192904 (2008); http://dx.doi.org/10.1063/1.3025842 (3 pages) | Cited 3 times

Online Publication Date: 10 November 2008

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Piezoelectric responses of barium titanate single crystals are investigated along the [720] and [111] directions, respectively, in order to verify the ultrahigh piezoelectric constant (2000 pC/N) reported in a previous study [ Appl. Phys. Lett. 86, 012905 (2005) ]. The results suggest that electric-field-induced strain can be largely enhanced by the domain switching in barium titanate single crystal along the [720] direction; however, the piezoelectric response under small field measurement has not been enhanced as much as expected because domain switching is a nonlinear and irreversible process.
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77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena

High electric tunability of relaxor ferroelectric Langmuir–Blodgett terpolymer films

J. L. Wang, X. J. Meng, S. Z. Yuan, J. Yang, J. L. Sun, H. S. Xu, and J. H. Chu

Appl. Phys. Lett. 93, 192905 (2008); http://dx.doi.org/10.1063/1.3026535 (3 pages) | Cited 10 times

Online Publication Date: 10 November 2008

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Poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer films have been fabricated on Al-coated polyimide substrates using the Langmuir–Blodgett (LB) technology. The electrical properties of the films have been investigated from 150 to 350 K. The temperature of the dielectric maximum and the measured frequency obeys the Vogel–Fulcher [ J. Am. Ceram. Soc. 8, 339 (1925); Phys. Z. 22, 645 (1921) ] law. The electric tunabilities of the films at room temperature are 42.6% and 80% under 50 and 240 MV/m, respectively. The reasons for the high tunability are discussed based on the special microstructure of the LB films.
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77.84.Jd Polymers; organic compounds
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
77.80.B- Phase transitions and Curie point

Role of oxygen partial pressure and seed layer chemistry in flux mediated epitaxy of single phase multiferroic BiFeO3 thin films

Varatharajan Anbusathaiah, Ching Jung Cheng, Sung Hwan Lim, Makoto Murakami, Lourdes G. Salamanca-Riba, Ichiro Takeuchi, and Valanoor Nagarajan

Appl. Phys. Lett. 93, 192906 (2008); http://dx.doi.org/10.1063/1.3021021 (3 pages) | Cited 4 times

Online Publication Date: 11 November 2008

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Multiferroic BiFeO3 (BFO) thin films have been fabricated via flux mediated epitaxy with varying oxygen partial pressure and flux composition (Bi2O3:CuO) conditions. Transmission electron microscopy coupled with energy dispersive x-ray spectroscopy as well as piezoresponse force microscopy confirm, that with the correct flux and seed layer conditions, even at very low partial pressures (3 mTorr) no secondary phases are formed. The study reveals the crucial role of the bottom seed layer and flux chemistry in epitaxy of BFO thin films and provides alternate routes to BFO epitaxy in oxygen-deficient environments.
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68.55.aj Insulators
81.15.Fg Pulsed laser ablation deposition
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
75.70.Ak Magnetic properties of monolayers and thin films
75.80.+q Magnetomechanical effects, magnetostriction

Observation of magnetoelectric coupling in glassy epitaxial PbFe0.5Nb0.5O3 thin films

Margarita Correa, Ashok Kumar, R. S. Katiyar, and Carlos Rinaldi

Appl. Phys. Lett. 93, 192907 (2008); http://dx.doi.org/10.1063/1.3021394 (3 pages) | Cited 12 times

Online Publication Date: 11 November 2008

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The temperature evolution of the dielectric spectra in PbFe0.5Nb0.5O3 (PFN) thin films showed a kink near the Néel temperature ( ∼ 170 K), diffuse phase transition (327–380 K) with frequency dispersion at dielectric maxima temperature, and almost frequency independent maxima at 600 K, suggesting weak magnetoelectric coupling, relaxor behavior, and structural phase transition, respectively. Dielectric properties and magnetic hysteresis revealed the coexistence of relaxor ferroelectricity and weak ferromagnetism at room temperature in PFN films. The magnetization as a function of temperature revealed a cusp in the zero field cooled curve for low magnetic field ( ∼ 100 Oe) near 170 K, suggesting spin glasslike behavior.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Ak Magnetic properties of monolayers and thin films
77.80.B- Phase transitions and Curie point
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.22.Ch Permittivity (dielectric function)

Observation of long range correlation dynamics in BaTiO3 near TC by photon correlation spectroscopy

Rui Yan, Zhi Guo, Renzhong Tai, Hongjie Xu, Xiangyong Zhao, Di Lin, Xiaobing Li, and Haosu Luo

Appl. Phys. Lett. 93, 192908 (2008); http://dx.doi.org/10.1063/1.3025465 (3 pages) | Cited 6 times

Online Publication Date: 11 November 2008

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Long range correlation dynamics of polarization clusters in BaTiO3 have been observed directly near the Curie temperature (TC) by photon correlation spectroscopy. A correlation length on the order of 200 nm was found to be dynamic near TC with a characteristic relaxation time of several microseconds. This relaxation time decreased with an increase in temperature, but exhibited an anomaly at TC, indicating the dominating contribution to the dielectric permittivity by these polarization clusters near TC.
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77.22.Ej Polarization and depolarization
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics

H. Shi, J. Bao, R. S. Smith, H. Huang, J. Liu, P. S. Ho, M. L. McSwiney, M. Moinpour, and G. M. Kloster

Appl. Phys. Lett. 93, 192909 (2008); http://dx.doi.org/10.1063/1.3026528 (3 pages) | Cited 13 times

Online Publication Date: 11 November 2008

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This study investigated the origin of dielectric loss induced by O2 plasma on organo-silicate glass low-k dielectrics. The contributions from the polarization components to dielectric constant were delineated by analyzing the results from capacitance-voltage measurement, spectroscopic ellipsometry, and Fourier transform infrared spectroscopy together with the Kramers–Kronig dispersion relation. The dielectric loss was found to be dominated by the dipole contribution, compared with the electronic and ionic polarizations. The origin of the dipole contribution was further investigated by performing quantum chemistry calculations. The physisorbed water molecules were found to be primarily responsible for the dipole moment increase and the dielectric loss.
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77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Effects of background oxygen pressure on dielectric and ferroelectric properties of epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrTiO3

M. Abazari, E. K. Akdoğan, and A. Safari

Appl. Phys. Lett. 93, 192910 (2008); http://dx.doi.org/10.1063/1.3025301 (3 pages) | Cited 5 times

Online Publication Date: 12 November 2008

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Oxygen partial pressure (PO2) in pulsed laser deposition significantly influences the composition, microstructure, and electrical properties of epitaxial misfit strain-relieved 450 nm ⟨001⟩ oriented epitaxial (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated SrTiO3. Films deposited at 400 mTorr exhibit high remnant and saturated polarization of 7.5 and 16.5 μC/cm2, respectively, which is ∼ 100% increase over the ones grown at 100 mTorr. The dielectric constant linearly increases from 220 to 450 with increasing PO2. The observed changes in surface morphology of the films and their properties are shown to be due to the suppression of volatile A-site cation loss.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)
68.35.bt Other materials

Mechanism analysis of improved corona-resistant characteristic in polyimide/TiO2 nanohybrid films

Jun-Wei Zha, Hong-Tao Song, Zhi-Min Dang, Chang-Yong Shi, and Jinbo Bai

Appl. Phys. Lett. 93, 192911 (2008); http://dx.doi.org/10.1063/1.3025408 (3 pages) | Cited 7 times

Online Publication Date: 12 November 2008

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Polyimide/TiO2 nanohybrid films with good corona resistance were prepared by using in situ dispersive polymerization. Effects of the concentration of nano-TiO2 fillers and the corona aging time on the dielectric properties of the films were explored. Results showed that the corona resistance of the hybrid films could be improved with increasing the concentration of TiO2 fillers, and the corona resistance was dependent on the dielectric permittivity of the hybrid films. The mechanism of the corona resistance was also discussed by analyzing the change in electric field and the electron action of TiO2 fillers based on the Fermi–Dirac statistic.
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77.55.-g Dielectric thin films
81.05.Qk Reinforced polymers and polymer-based composites
81.07.Pr Organic-inorganic hybrid nanostructures
77.84.Lf Composite materials
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ch Permittivity (dielectric function)

Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films

K. B. Jinesh, Y. Lamy, R. A. M. Wolters, J. H. Klootwijk, E. Tois, F. Roozeboom, and W. F. A. Besling

Appl. Phys. Lett. 93, 192912 (2008); http://dx.doi.org/10.1063/1.3025850 (3 pages) | Cited 2 times

Online Publication Date: 12 November 2008

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The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels. Time of flight secondary ion mass spectroscopy depth profiling shows a significant amount of silicon out-diffusion from the substrate and aluminum in-diffusion towards the oxide. By using titanium nitride as the electrode, the silicon out-diffusion is suppressed, which improves the device performance. This indicates that, despite the larger coordination number of the lanthanum ions in the oxide, aluminum acts as a sink for silicon, thus driving the out-diffusion of silicon.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Bulk dense fine-grain (1−x)BiScO3–xPbTiO3 ceramics with high piezoelectric coefficient

Tingting Zou, Xiaohui Wang, Han Wang, Caifu Zhong, Longtu Li, and I-Wei Chen

Appl. Phys. Lett. 93, 192913 (2008); http://dx.doi.org/10.1063/1.2995861 (3 pages) | Cited 17 times

Online Publication Date: 13 November 2008

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High density fine grain (1−x)BiScO3–xPbTiO3 ceramics were successfully prepared by two-step sintering and their ferroelectric properties were investigated. Experimental evidence indicates the existence of a morphotropic phase boundary at the composition x = 0.635, which exhibits a piezoelectric coefficient d33 of 700 pC/N at room temperature, significantly higher than the reported values to date. Furthermore, a higher electromechanical coupling factor Kp = 0.632 and a larger remnant polarization Pr = 47.3 μC/cm2 were obtained. The paraelectric-to-ferroelectric phase transition occurs at 446 °C, slightly lower than in the coarse grain ceramics with a similar composition, suggesting a grain size effect. The local effective piezoelectric coefficient d33∗ was estimated to be 795 pC/N at 2.29 V, measured by scanning probe microscopy. Further atomic force microscope observation revealed the existence of 90° domains of about 60–70 nm in width, confirming the previous results that small domain structure enhances the piezoelectric properties.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
77.65.-j Piezoelectricity and electromechanical effects
77.80.B- Phase transitions and Curie point
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Composite structure and size effect of barium titanate nanoparticles

Takuya Hoshina, Satoshi Wada, Yoshihiro Kuroiwa, and Takaaki Tsurumi

Appl. Phys. Lett. 93, 192914 (2008); http://dx.doi.org/10.1063/1.3027067 (3 pages) | Cited 36 times

Online Publication Date: 13 November 2008

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Nanostructures of barium titanate (BaTiO3) nanoparticles were analyzed using a composite structure model. It was found that BaTiO3 nanoparticles had a composite structure consisting of (i) inner tetragonal core, (ii) gradient lattice strain layer (GLSL), and (iii) surface cubic layer. The crystal structure of each region did not depend on particle size while the volume fraction of the GLSL and the surface cubic layer increased with decreasing the particle size. These results suggested that the size effect of BaTiO3 nanoparticles originated from the composite structure.
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61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)

Strong magnetoelectric coupling in multiferroic BiFeO3–Pb(Zr0.52Ti0.48)O3 composite films derived from electrophoretic deposition

Yujie Wu, Jian-guo Wan, Chuanfu Huang, Yuyan Weng, Shifeng Zhao, Jun-ming Liu, and Guanghou Wang

Appl. Phys. Lett. 93, 192915 (2008); http://dx.doi.org/10.1063/1.3028089 (3 pages) | Cited 10 times

Online Publication Date: 14 November 2008

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The BiFeO3–Pb(Zr0.52Ti0.48)O3 composite film in which BiFeO3 nanoparticles are distributed in the Pb(Zr0.52Ti0.48)O3 matrix was prepared by electrophoretic deposition method. The microstructural characterization revealed the structural distortion of the BiFeO3 phase, induced by the unique BiFeO3–Pb(Zr0.52Ti0.48)O3 core/shell structure. The composite film exhibited evidence of ferroelectricity with enhanced ferromagnetism as well as a magnetoelectric effect. The two origins for the magnetoelectric effect are presented. This present work provides a promising roadmap to improve the magnetoelectric effect of BiFeO3-based multiferroics for actual applications.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Cc Other ferromagnetic metals and alloys
77.84.Lf Composite materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.70.Ak Magnetic properties of monolayers and thin films
81.15.Pq Electrodeposition, electroplating
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