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10 Nov 2008

Volume 93, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 93, 192501 (2008); http://dx.doi.org/10.1063/1.3013857 (3 pages)

O. Hellwig, A. Moser, E. Dobisz, Z. Z. Bandic, H. Yang, D. S. Kercher, J. D. Risner-Jamtgaard, D. Yaney, and E. E. Fullerton
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Effect of electric fields on the rest time of coalescing drops

A. S. Lukyanets and H. P. Kavehpour

Appl. Phys. Lett. 93, 194101 (2008); http://dx.doi.org/10.1063/1.3020693 (3 pages) | Cited 1 time

Online Publication Date: 10 November 2008

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The rest time of drops coalescing at a fluid interface under ac/dc electric fields is investigated with high-speed photography. We show that the rest time consists of two stages dominated by deformation and drainage. Previous models predict a single stage process, dependent only on the electric field magnitude; our experiments show that frequency is also important. Initially, the drop begins to deform once the electric field in the gap between the drop and fluid bulk reaches a critical value; afterward, the rest time depends only on the interfacial fluid film drainage and is inversely proportional to electric field strength.
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68.05.-n Liquid-liquid interfaces
62.10.+s Mechanical properties of liquids
68.15.+e Liquid thin films
47.55.D- Drops and bubbles

Invisibility cloak without singularity

Wei Xiang Jiang, Tie Jun Cui, Xin Mi Yang, Qiang Cheng, Ruopeng Liu, and David R. Smith

Appl. Phys. Lett. 93, 194102 (2008); http://dx.doi.org/10.1063/1.3026532 (3 pages) | Cited 48 times

Online Publication Date: 10 November 2008

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An elliptical invisible cloak is proposed using a coordinate transformation in the elliptical-cylindrical coordinate system, which crushes the cloaked object to a line segment instead of a point. The elliptical cloak is reduced to a nearly circular cloak if the elliptical focus becomes very small. The advantage of the proposed invisibility cloak is that none of the parameters is singular and the changing range of all parameters is relatively small.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.25.Gy Edge and boundary effects; reflection and refraction
42.79.Dj Gratings

Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces

Yun Sun, Piero Pianetta, Po-Ta Chen, Masaharu Kobayashi, Yoshio Nishi, Niti Goel, Michael Garner, and Wilman Tsai

Appl. Phys. Lett. 93, 194103 (2008); http://dx.doi.org/10.1063/1.3025852 (3 pages) | Cited 14 times

Online Publication Date: 13 November 2008

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The surface cleaning of InGaAs and InAlAs is studied using synchrotron radiation photoelectron spectroscopy. Thermal annealing at 400 °C cannot completely remove the native oxides from those surfaces. Elemental arsenic buildup is observed on both surfaces after acid treatment using HCl, HF, or H2SO4 solution, which is similar to acid-cleaned GaAs surface. Cleaned InGaAs surface is oxide-free but small amount of aluminum oxide remains on cleaned InAlAs surface. The common chemical reactions between III-As semiconductors and acid solutions are identified and are found to be dominated by arsenic chemistry.
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81.65.Cf Surface cleaning, etching, patterning
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.Cc Kinetics of defect formation and annealing
68.35.bg Semiconductors
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.05.Ea III-V semiconductors

A monolithically integrated magneto-optoelectronic circuit

D. Saha, D. Basu, and P. Bhattacharya

Appl. Phys. Lett. 93, 194104 (2008); http://dx.doi.org/10.1063/1.3028092 (3 pages) | Cited 2 times

Online Publication Date: 13 November 2008

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The monolithic integration of a spin valve, an amplifier, and a light emitting diode to form a magneto-optoelectronic integrated circuit on GaAs is demonstrated. The circuit converts the spin polarization information in the channel of the spin valve to an amplified change in light intensity with a gain of 20. The monolithic circuit therefore operates as a magnetoelectronic switch which modulates the light intensity of the light emitting diode.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
85.60.-q Optoelectronic devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.70.Sq Magnetooptical devices
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