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17 Nov 2008

Volume 93, Issue 20, Articles (20xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 201101 (2008); http://dx.doi.org/10.1063/1.3025818 (3 pages)

W. Dai and C. M. Soukoulis
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Doping of Ge–SixGe1−x core-shell nanowires using low energy ion implantation

Junghyo Nah, K. Varahramyan, E.-S. Liu, S. K. Banerjee, and E. Tutuc

Appl. Phys. Lett. 93, 203108 (2008); http://dx.doi.org/10.1063/1.3013335 (3 pages) | Cited 8 times

Online Publication Date: 20 November 2008

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We investigate the doping of germanium (Ge)–silicon germanium (SixGe1−x) core-shell nanowires (NWs) by low energy (3 keV) boron (B) ion implantation. Ge–SixGe1−x core-shell NWs were implanted with B atoms at different doses from 1×1014 to 1×1015 cm−2, and subsequently annealed for dopant activation. Using four-point, gate-dependent resistance measurements, we determine the resistivity, doping levels, and contacts resistance of the B-doped Ge–SixGe1−x NWs. Our findings show that depending on the implantation dose, the doping level of B-doped NWs ranges from 1×1018 to 2×1020 cm−3.
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61.72.up Other materials
61.72.sd Impurity concentration
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
73.63.Nm Quantum wires
73.40.Cg Contact resistance, contact potential

Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation

Shadi A. Dayeh, Peng Chen, Yi Jing, Edward T. Yu, S. S. Lau, and Deli Wang

Appl. Phys. Lett. 93, 203109 (2008); http://dx.doi.org/10.1063/1.3013566 (3 pages) | Cited 6 times

Online Publication Date: 20 November 2008

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Vertical and electrically isolated InAs nanowires (NWs) are integrated with Si in a technique that bypasses structural defects and transport barriers at the Si–III–V NW interface. Smart-cut® technique is used to transfer a thin InAs layer onto SiO2/Si and is subsequently used for ordered organometallic vapor phase epitaxy of InAs NWs. The InAs layer in the regions between the InAs NWs is etched resulting in ordered, vertical, and electrically isolated InAs NW arrays. This transfer and fabrication technique enables heteroepitaxy of three dimensional III–V structures on Si and allows the realization of vertical devices with unprecedented control over their architectures.
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81.05.Ea III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
73.63.Nm Quantum wires
81.16.-c Methods of micro- and nanofabrication and processing
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy

T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, and K. Sakoda

Appl. Phys. Lett. 93, 203110 (2008); http://dx.doi.org/10.1063/1.3026174 (3 pages) | Cited 10 times

Online Publication Date: 20 November 2008

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We have demonstrated photopumped laser action of self-assembled GaAs/AlGaAs quantum dots (QDs) grown on GaAs (311)A substrate by droplet epitaxy. Due to the short migration distance of Ga adatoms across the (311)A surface, high-density QDs were created with high uniformity. The QDs exhibited a narrow spectral band of intense photoluminescence from the QD ensemble, reflecting their small size distribution and high quality. Using the QDs on the (311)A surface as an active laser medium, we observed multimodal stimulated emissions at temperatures of up to 300 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Electrical characterization of gold island films: A route to control of nanoparticle deposition

A. Lassesson, S. A. Brown, J. van Lith, and M. Schulze

Appl. Phys. Lett. 93, 203111 (2008); http://dx.doi.org/10.1063/1.3027463 (3 pages) | Cited 1 time

Online Publication Date: 20 November 2008

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The evaporation of gold onto SiN or SiOx leads to the formation of nanoscale islands separated by tunneling barriers. As the deposited thickness of Au increases, there is a linear increase in island size and an exponential decrease in film resistance, resulting from coalescence of neighboring islands. This understanding of film morphology allows the construction of a simple model of film resistivity. The model also accounts for the exponential decrease of resistance observed during deposition of Pd nanoparticles onto Au island films. The results suggest the use of discontinuous Au island films as a sensitive way of controlling nanoparticle deposition.
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73.61.At Metal and metallic alloys
68.55.at Other materials
68.55.J- Morphology of films
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.07.Wx Nanopowders

Influence of strong electric fields on the growth, modification, and destruction of thin oxide films at the titanium surface

S. A. Kovalevskii, F. I. Dalidchik, M. V. Grishin, and A. K. Gatin

Appl. Phys. Lett. 93, 203112 (2008); http://dx.doi.org/10.1063/1.3028026 (3 pages) | Cited 4 times

Online Publication Date: 20 November 2008

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The influence of strong electric fields ( ∼ 107 V/cm) on the growth, modification, and destruction of thin oxide films at the metal surfaces are studied for a titanium tip of a scanning tunneling microscope (STM) oxidized in oxygen at different tip potentials. The spectroscopic measurements show that, in sufficiently strong fields (V ≤ −7.5 V) preventing migration of oxygen ions from the surface to bulk, the dielectric oxide films can form even for exposures of ∼ 10 L. At voltages V>−7.5 V, i.e., at lower fields, as well as for the opposite polarity, the conducting oxide films containing predominantly Ti+2 and Ti+3 ions are formed at the tip for the same exposures. The possibility of structural modification in the electric field of STM is demonstrated for titanium nanooxides.
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68.55.aj Insulators
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
77.55.-g Dielectric thin films
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
68.43.Mn Adsorption kinetics
61.46.-w Structure of nanoscale materials

Origin of unusual rapid oxidation process for ultrathin oxidation (<2 nm) of silicon

H. Cui, C. X. Wang, G. W. Yang, and D. Jiang

Appl. Phys. Lett. 93, 203113 (2008); http://dx.doi.org/10.1063/1.3030985 (3 pages) | Cited 2 times

Online Publication Date: 20 November 2008

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We propose a kinetic model to reveal the origin of unusual rapid oxidation behavior for the ultrathin (<2 nm) oxidation of silicon demonstrated by [ Enta et al., Appl. Phys. Lett. 92, 012110 (2008) ] by considering the space-charge drift of O ions and the intrinsic concentration gradient diffusion of residual O ions that dominate the initial rapid oxidation process following the slow oxidation state, respectively. Importantly, the present model well describes the whole experiment data with different temperatures and pressures and diffusion activation energies for two regimes attained by our model, which coincides with the reported experiment data and theory calculation.
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81.65.Mq Oxidation
77.22.Jp Dielectric breakdown and space-charge effects
68.35.Fx Diffusion; interface formation

Reconfiguration of microring resonators by liquid adhesion

C. A. Barrios, M. Holgado, O. Guarneros, K. B. Gylfason, B. Sánchez, R. Casquel, and H. Sohlström

Appl. Phys. Lett. 93, 203114 (2008); http://dx.doi.org/10.1063/1.3033528 (3 pages) | Cited 2 times

Online Publication Date: 20 November 2008

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We present a procedure to reconfigure microring resonators based on liquid surface adhesion. Droplets of organic solvents were deposited over Si3N4/SiO2 strip- and slot-waveguide ring resonators, and the transmission spectra were measured several hours after the evaporation of the droplets at room temperature. Our measurements show that the optical properties of the microrings are significantly modified by liquid adhered to the waveguides, persisting even 96 h after bulk evaporation. Liquid-solid interfacial forces slow down liquid evaporation at the nanoscale, enabling permanent photonic configurations. Rewriteability is achieved by removing the adhered liquid with heat.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.40.Az Waveguides, transmission lines, striplines

Quantitative scanning thermal microscopy using double scan technique

Kyeongtae Kim, Jaehoon Chung, Jongbo Won, Ohmyoung Kwon, Joon Sik Lee, Seung Ho Park, and Young Ki Choi

Appl. Phys. Lett. 93, 203115 (2008); http://dx.doi.org/10.1063/1.3033545 (3 pages) | Cited 9 times

Online Publication Date: 20 November 2008

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Although scanning thermal microscope has shown the highest spatial resolution in local temperature and thermophysical property measurement, its usefulness has been severely limited due to difficulties in quantitative measurement. We propose a double scan technique that measures temperature only from the heat transfer through the tip-sample contact by the subtraction of the signal due to the heat transfer through the air. A rigorous theoretical model for this technique is derived. The effectiveness of the double scan technique in quantitative temperature measurement is demonstrated experimentally.
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07.20.Dt Thermometers
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)

Controlling multidomain states to enable sub-10-nm magnetic force microscopy

Nissim Amos, Rabee Ikkawi, Robert Haddon, Dmitri Litvinov, and Sakhrat Khizroev

Appl. Phys. Lett. 93, 203116 (2008); http://dx.doi.org/10.1063/1.3036533 (3 pages) | Cited 2 times

Online Publication Date: 21 November 2008

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The letter reports experimental data to demonstrate magnetic force microscopy (MFM) with sub-10-nm resolution under ambient conditions. To achieve this record high resolution, multidomain states in a nanomagnetic probe were controlled. Two demagnetized (multidomain) FePt (45/55) films sputtered on a silicon probe and separated by an 8 nm thick MgO layer were further annealed at temperature of 650 °C to trigger the high-anisotropy L10 phase. A field of above 2 T was applied to drive the probes into a saturated “single-domain” state. The multidomain probes were equivalently compared with state-of-the-art conventional MFM probes via comparative imaging of benchmark magnetic recording disks.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Ss Magnetic recording materials
75.30.Gw Magnetic anisotropy
75.60.Ch Domain walls and domain structure

Temperature dependent photoluminescence from ZnO nanowires and nanosheets on brass substrate

Xiuquan Gu, Kaifu Huo, Guixiang Qian, Jijiang Fu, and Paul K. Chu

Appl. Phys. Lett. 93, 203117 (2008); http://dx.doi.org/10.1063/1.3033823 (3 pages) | Cited 17 times

Online Publication Date: 21 November 2008

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The temperature-dependent optical properties of ZnO nanosheets and nanowires fabricated on conductive brass substrates with different surface-to-volume ratios and morphologies are investigated. The near band edge and deep-level emission mechanisms are studied. The blueshifted donor bound exciton D 0X peak and enhanced deep-level emission in the low-temperature photoluminescence spectrum of the nanosheets are due to the large surface-to-volume ratios. Although D 0X is the dominant emission from both the nanowires and nanosheets at low temperature, the room-temperature spectra are dominated by D 0X (nanowires) and first order longitudinal optical phonon replica of free exciton (nanosheets). The decay in the D 0X peak intensity stems from the thermal dissociation of D 0X to free exciton.
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78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
71.55.Gs II-VI semiconductors
71.35.-y Excitons and related phenomena
81.16.-c Methods of micro- and nanofabrication and processing
73.21.Hb Quantum wires
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A sensor circuit using reference-based conductance switching in organic electrochemical transistors

Per-Olof Svensson, David Nilsson, Robert Forchheimer, and Magnus Berggren

Appl. Phys. Lett. 93, 203301 (2008); http://dx.doi.org/10.1063/1.2975377 (3 pages) | Cited 6 times

Online Publication Date: 18 November 2008

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Using organic electrochemical transistors as sensors, the sample-receptor reaction often induces moderate changes only in the drain current dynamics as the gate voltage level is switched. Here, we report an electrochemical sensor circuit including electrochemical transistors based on poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate that puts out a static sensor response signal. The circuit includes a sample and a reference transistor that are both driven in the resistive mode at 0.1 V. Measurements were performed on aqueous salt electrolytes ranging from 100 to 500 mM concentrations. The signal-ON sensor circuit provides a tenfold increase in the sensitivity as compared to single transistor sensors.
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82.47.Rs Electrochemical sensors
82.45.Gj Electrolytes
FREE

Light-induced hysteresis characteristics of copper phthalocyanine organic thin-film transistors

Lijuan Zhen, Liwei Shang, Ming Liu, Deyu Tu, Zhuoyu Ji, Xinghua Liu, Ge Liu, Jiang Liu, and Hong Wang

Appl. Phys. Lett. 93, 203302 (2008); http://dx.doi.org/10.1063/1.3027059 (3 pages) | Cited 7 times

Online Publication Date: 18 November 2008

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Applying a bidirectional sweeping gate voltage, the white-light illuminated copper phthalocyanine thin-film transistors (CuPc-TFTs) show obvious hysteresis effect and the hysteresis window is 32 V. This effect is dominated by the additional carriers generated by photoirradiation. Although small hysteresis exists in CuPc-TFTs without illumination, light makes the hysteresis more obvious. Thus, CuPc-TFTs are promising to realize light detection and/or light memory in a single organic device for future low-cost, ultrahigh-density organic photoelectric integration.
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85.30.Tv Field effect devices
FREE

Electrical bistable memory device based on a poly(styrene-b-4-vinylpyridine) nanostructured diblock copolymer thin film

Ching-Mao Huang, Yung-Sheng Liu, Chen-Chia Chen, Kung-Hwa Wei, and Jeng-Tzong Sheu

Appl. Phys. Lett. 93, 203303 (2008); http://dx.doi.org/10.1063/1.3028336 (3 pages) | Cited 7 times

Online Publication Date: 18 November 2008

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This paper describes the performance of a nonvolatile memory device based on a solution-processed poly(styrene-b-4-vinylpyridine) (PS-b-P4VP) diblock copolymer thin film. The Al/PS-b-P4VP/indium tin oxide memory device featuring metal-coordinated 30 nm P4VP cores exhibited an ON/OFF ratio of 2×105, an erase voltage of 0.75 V, a write voltage of −0.5 V, and a retention time of 104 s. The device exhibited a metallic behavior in the ON state, suggesting the formation of metallic filaments through the migration of Al atoms into the P4VP domain during writing. Such nanostructured diblock copolymer thin films open up avenues for fabricating organic memory devices using simple procedures.
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84.30.Sk Pulse and digital circuits
61.46.-w Structure of nanoscale materials
81.16.Dn Self-assembly
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Compact 2×2 tapered multimode interference couplers based on SU-8 polymer rectangular waveguides

Liu Yang, Bo Yang, Zhen Sheng, Jianwei Wang, Daoxin Dai, and Sailing He

Appl. Phys. Lett. 93, 203304 (2008); http://dx.doi.org/10.1063/1.3028345 (3 pages) | Cited 3 times

Online Publication Date: 18 November 2008

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A 2×2 tapered multimode interference (MMI) coupler is designed and fabricated by using air-cladded SU-8 rectangular waveguide, which is effective in reducing the device size and improving the self-imaging quality. The parabolically tapered MMI section is used to reduce further the size of the MMI coupler. A compact 2×2 coupler with a total MMI size of about 5.3×34.2 μm2 is demonstrated and characterized. The measurement results show that the fabricated 2×2 MMI coupler has relatively small excess loss and nonuniformity for both polarizations in a broad wavelength range (from 1480 to 1630 nm).
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
FREE

A polymer/fullerene based photodetector with extremely low dark current for x-ray medical imaging applications

T. Agostinelli, M. Campoy-Quiles, J. C. Blakesley, R. Speller, D. D. C. Bradley, and J. Nelson

Appl. Phys. Lett. 93, 203305 (2008); http://dx.doi.org/10.1063/1.3028640 (3 pages) | Cited 16 times

Online Publication Date: 18 November 2008

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Organic photodetectors for use in medical x-ray digital imaging applications are fabricated from poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester using a solution-based, temperature assisted deposition protocol. In comparison to bulk heterojunction structures, the proposed protocol leads to much lower dark currents while still offering useful external quantum efficiency values. Devices made by this protocol lead to dark currents of around 50 pA/cm2 at −0.8 V, well within the requirements for x-ray digital imaging. When coupled to a scintillating phosphor screen the device yields a linear response of photocurrent to x-ray exposure (from 0 to 7mGy/s) for a range of operating biases.
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87.59.bf Digital radiography
85.60.Gz Photodetectors (including infrared and CCD detectors)
FREE

Diffusion of atmospheric gases into barrier-layer sealed organic light emitting diodes

Prashant Mandlik, Lin Han, Sigurd Wagner, Jeff A. Silvernail, Rui-Qing Ma, Michael Hack, and Julie J. Brown

Appl. Phys. Lett. 93, 203306 (2008); http://dx.doi.org/10.1063/1.3030982 (3 pages) | Cited 1 time

Online Publication Date: 19 November 2008

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Organic light emitting diodes (OLEDs) are protected from the atmosphere with a barrier layer. Even when this permeation barrier is hermetic, dark spots still may grow and dark sheets may extend into the OLED. These grow by diffusion from the atmosphere along the interfaces between the barrier layer with embedded particles or with the substrate. Observed growth rates of dark spots and sheets are modeled by a single diffusion mechanism. Similar normalized flux densities along the two pathways and a diffusion coefficient of ∼ 10−8 cm2/s suggest a similar polymeric structure of the barrier/particle and barrier/substrate interfaces.
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85.60.Jb Light-emitting devices
FREE

Enhancing single-molecule photostability by optical feedback from quantum jump detection

V. Jacques, J. D. Murray, F. Marquier, D. Chauvat, F. Grosshans, F. Treussart, and J.-F. Roch

Appl. Phys. Lett. 93, 203307 (2008); http://dx.doi.org/10.1063/1.3013843 (3 pages) | Cited 1 time

Online Publication Date: 20 November 2008

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We report an optical technique that yields an enhancement of single-molecule photostability by greatly suppressing photobleaching pathways which involve photoexcitation from the triplet state. This is accomplished by dynamically switching off the excitation laser when a quantum jump of the molecule to the triplet state is optically detected. The resulting improvement in photostability unambiguously confirms the importance of photoexcitation from the triplet state in photobleaching dynamics and will allow the investigation of new phenomena at the single-molecule level.
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33.80.-b Photon interactions with molecules
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
FREE

Self-aligned flexible all-polymer transistor: Ultraviolet printing

Hyewon Kang, Tae-il Kim, and Hong H. Lee

Appl. Phys. Lett. 93, 203308 (2008); http://dx.doi.org/10.1063/1.3028090 (3 pages) | Cited 4 times

Online Publication Date: 20 November 2008

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Flexible all-polymer transistor has received much attention because it is needed for the unique area of flexible circuits and displays, and the solution processing allowed with polymers would enable low-cost production. In this work, we introduce and utilize ultraviolet (UV) printing technique for the fabrication of flexible all-polymer transistor. The technique allows printing of submicron patterns of polymers without applying heat or pressure, requiring only UV light. The UV printing also allows self-aligned gate formation, which can be accomplished through a simple roll-to-roll printing. The electrical performance of the flexible transistor thus fabricated is better than that of the other flexible all-polymer transistors.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
81.16.Nd Micro- and nanolithography
FREE

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho, Himadri S. Majumdar, Jayanta K. Baral, Fredrik Jansson, Ronald Österbacka, and Olli Ikkala

Appl. Phys. Lett. 93, 203309 (2008); http://dx.doi.org/10.1063/1.3033221 (3 pages) | Cited 20 times

Online Publication Date: 20 November 2008

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The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.
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73.61.Wp Fullerenes and related materials
73.61.Ph Polymers; organic compounds
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.37.Lp Transmission electron microscopy (TEM)
FREE

Charge transport dynamics of polymer solar cells under operating conditions: Influence of trap filling

Christopher R. McNeill and Neil C. Greenham

Appl. Phys. Lett. 93, 203310 (2008); http://dx.doi.org/10.1063/1.3033372 (3 pages) | Cited 18 times

Online Publication Date: 20 November 2008

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The authors report time-of-flight measurements on photovoltaic blends of poly(3-hexylthiophene) and poly((9,9-dioctylfluorene)-2,7-diyl-alt-[4,7-bis(3-hexylthien-5-yl)-2,1,3-benzothiadiazole]-2′,2″-diyl) (F8TBT). Through the use of an additional illumination source to provide a background current density, the influence of the charge density and trap population on hole and electron dynamics is studied. For holes, little change in the transit time is observed with this background illumination, whereas for electrons, a clear electron transient is observed with background illumination that is not observed without. Under solar illumination the electron trap states are sufficiently populated such that charge transport in all-polymer blends may not be as unbalanced as previously thought.
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84.60.Jt Photoelectric conversion
85.60.-q Optoelectronic devices
72.80.Le Polymers; organic compounds (including organic semiconductors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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Write-erase and read paper memory transistor

Rodrigo Martins, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato

Appl. Phys. Lett. 93, 203501 (2008); http://dx.doi.org/10.1063/1.3030873 (3 pages) | Cited 26 times

Online Publication Date: 17 November 2008

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We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.
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85.30.Tv Field effect devices

Domain wall displacement in Py square ring for single nanometric magnetic bead detection

P. Vavassori, V. Metlushko, B. Ilic, M. Gobbi, M. Donolato, M. Cantoni, and R. Bertacco

Appl. Phys. Lett. 93, 203502 (2008); http://dx.doi.org/10.1063/1.3030984 (3 pages) | Cited 14 times

Online Publication Date: 17 November 2008

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An approach based on domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particle is presented. We modeled and experimentally demonstrated the viability of the approach using an anisotropic magnetoresistance device made by a micron-sized square ring of Permalloy. This detection concept can be suitable to biomolecular recognition and, in particular, to single molecule detection.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
87.85.fk Biosensors
73.43.Qt Magnetoresistance

Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

M. R. Sakr and X. P. A. Gao

Appl. Phys. Lett. 93, 203503 (2008); http://dx.doi.org/10.1063/1.3031701 (3 pages) | Cited 9 times

Online Publication Date: 17 November 2008

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We studied the low frequency noise in indium arsenide (InAs) nanowire field effect transistors at different temperatures and gate voltages. Mostly, the excess noise had 1/f dependence except at low temperatures and gate voltages close to the threshold value where the noise changed gradually to Lorentzian. The Hooge’s parameter showed thermally activated behavior with minimum value ∼ 5×10−4. The distribution of activation energies of the fluctuators responsible for the noise was found to have broad minima associated with the characteristic temperature of the thermally activated Hooge’s parameter.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging

Gholamreza Chaji, Arokia Nathan, and Quentin Pankhurst

Appl. Phys. Lett. 93, 203504 (2008); http://dx.doi.org/10.1063/1.3002320 (3 pages) | Cited 5 times

Online Publication Date: 18 November 2008

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A top-illuminated, nonoffset amorphous silicon (a-Si) photo thin-film transistor structure is presented for biomolecular imaging applications. The device yields a high gate-modulated response to near infrared wavelengths, enhanced by trapped assisted absorption in the transistor. In addition, its flicker noise power is reduced by more than a factor of 3 by means of a switched biasing technique. Since the image sensor, readout, and amplification are the same elements, the pixel size can be made relatively small, enabling high resolution imaging capability over large area using standard, low-cost flat-panel technology.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
87.80.-y Biophysical techniques (research methods)

Symmetrical frequency response in a split ring resonator based transmission line

A. L. Borja, J. Carbonell, V. E. Boria, and D. Lippens

Appl. Phys. Lett. 93, 203505 (2008); http://dx.doi.org/10.1063/1.3025625 (3 pages) | Cited 6 times

Online Publication Date: 18 November 2008

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A coplanar waveguide line based on a split ring resonator technology and loaded with metallic strips and capacitances is proposed. The addition of series capacitances to previous unit cell implementations dramatically improves the upper band rejection levels and provides a transmission response almost symmetric. The configuration also exhibits a band pass response with a right-handed character as a result of the balance between advance and delay phase offsets contrary to the conventional left-handed lines. The interpretation is based on an equivalent circuit model, full-wave electromagnetic analysis, and measured responses of a prototype designed for microwave operation.
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84.40.Az Waveguides, transmission lines, striplines
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