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17 Nov 2008

Volume 93, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 93, 201101 (2008); http://dx.doi.org/10.1063/1.3025818 (3 pages)

W. Dai and C. M. Soukoulis
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Write-erase and read paper memory transistor

Rodrigo Martins, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato

Appl. Phys. Lett. 93, 203501 (2008); http://dx.doi.org/10.1063/1.3030873 (3 pages) | Cited 26 times

Online Publication Date: 17 November 2008

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We report the architecture and the performances of a memory based on a single field-effect transistor built on paper able to write-erase and read. The device is composed of natural multilayer cellulose fibers that simultaneously act as structural support and gate dielectric; active and passive multicomponent amorphous oxides that work as the channel and gate electrode layers, respectively, complemented by the use of patterned metal layers as source/drain electrodes. The devices exhibit a large counterclockwise hysteresis associated with the memory effect, with a turn-on voltage shift between 1 and −14.5 V, on/off ratio and saturation mobilities of about 104 and 40 cm2 V−1 s−1, respectively, and estimated charge retention times above 14 000 h.
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85.30.Tv Field effect devices

Domain wall displacement in Py square ring for single nanometric magnetic bead detection

P. Vavassori, V. Metlushko, B. Ilic, M. Gobbi, M. Donolato, M. Cantoni, and R. Bertacco

Appl. Phys. Lett. 93, 203502 (2008); http://dx.doi.org/10.1063/1.3030984 (3 pages) | Cited 14 times

Online Publication Date: 17 November 2008

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An approach based on domain wall displacement in confined ferromagnetic nanostructures for attracting and sensing a single nanometric magnetic particle is presented. We modeled and experimentally demonstrated the viability of the approach using an anisotropic magnetoresistance device made by a micron-sized square ring of Permalloy. This detection concept can be suitable to biomolecular recognition and, in particular, to single molecule detection.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
87.85.fk Biosensors
73.43.Qt Magnetoresistance

Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

M. R. Sakr and X. P. A. Gao

Appl. Phys. Lett. 93, 203503 (2008); http://dx.doi.org/10.1063/1.3031701 (3 pages) | Cited 9 times

Online Publication Date: 17 November 2008

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We studied the low frequency noise in indium arsenide (InAs) nanowire field effect transistors at different temperatures and gate voltages. Mostly, the excess noise had 1/f dependence except at low temperatures and gate voltages close to the threshold value where the noise changed gradually to Lorentzian. The Hooge’s parameter showed thermally activated behavior with minimum value ∼ 5×10−4. The distribution of activation energies of the fluctuators responsible for the noise was found to have broad minima associated with the characteristic temperature of the thermally activated Hooge’s parameter.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Merged phototransistor pixel with enhanced near infrared response and flicker noise reduction for biomolecular imaging

Gholamreza Chaji, Arokia Nathan, and Quentin Pankhurst

Appl. Phys. Lett. 93, 203504 (2008); http://dx.doi.org/10.1063/1.3002320 (3 pages) | Cited 5 times

Online Publication Date: 18 November 2008

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A top-illuminated, nonoffset amorphous silicon (a-Si) photo thin-film transistor structure is presented for biomolecular imaging applications. The device yields a high gate-modulated response to near infrared wavelengths, enhanced by trapped assisted absorption in the transistor. In addition, its flicker noise power is reduced by more than a factor of 3 by means of a switched biasing technique. Since the image sensor, readout, and amplification are the same elements, the pixel size can be made relatively small, enabling high resolution imaging capability over large area using standard, low-cost flat-panel technology.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Tv Field effect devices
87.80.-y Biophysical techniques (research methods)

Symmetrical frequency response in a split ring resonator based transmission line

A. L. Borja, J. Carbonell, V. E. Boria, and D. Lippens

Appl. Phys. Lett. 93, 203505 (2008); http://dx.doi.org/10.1063/1.3025625 (3 pages) | Cited 6 times

Online Publication Date: 18 November 2008

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A coplanar waveguide line based on a split ring resonator technology and loaded with metallic strips and capacitances is proposed. The addition of series capacitances to previous unit cell implementations dramatically improves the upper band rejection levels and provides a transmission response almost symmetric. The configuration also exhibits a band pass response with a right-handed character as a result of the balance between advance and delay phase offsets contrary to the conventional left-handed lines. The interpretation is based on an equivalent circuit model, full-wave electromagnetic analysis, and measured responses of a prototype designed for microwave operation.
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84.40.Az Waveguides, transmission lines, striplines

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Byung Du Ahn, Hyun Soo Shin, Hyun Jae Kim, Jin-Seong Park, and Jae Kyeong Jeong

Appl. Phys. Lett. 93, 203506 (2008); http://dx.doi.org/10.1063/1.3028340 (3 pages) | Cited 36 times

Online Publication Date: 18 November 2008

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We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.
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73.40.Cg Contact resistance, contact potential
73.61.Jc Amorphous semiconductors; glasses
85.30.Tv Field effect devices

Separation enhancement in pinched flow fractionation

Asger Laurberg Vig and Anders Kristensen

Appl. Phys. Lett. 93, 203507 (2008); http://dx.doi.org/10.1063/1.3028652 (3 pages) | Cited 7 times

Online Publication Date: 18 November 2008

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A method for enhancing the separation in the microfluidic size separation technique called pinched flow fractionation (PFF) is demonstrated experimentally and analyzed by numerical calculations. The enhancement is caused by a geometrical modification of the original PFF design. Seven different polystyrene bead sizes ranging from 0.25 to 2.5 μm in radius were separated in a PFF and in an enhanced PFF device. The separation in the two types of devices were compared and an amplification in the separation of up to 70% was achieved. Numerical calculations, which include an edge effect, are used to analyze the device.
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47.85.Np Fluidics
47.61.-k Micro- and nano- scale flow phenomena
47.15.Rq Laminar flows in cavities, channels, ducts, and conduits
47.60.Dx Flows in ducts and channels

An UV photochromic memory effect in proton-based WO3 electrochromic devices

Yong Zhang, S.-H. Lee, A. Mascarenhas, and S. K. Deb

Appl. Phys. Lett. 93, 203508 (2008); http://dx.doi.org/10.1063/1.3029775 (2 pages) | Cited 8 times

Online Publication Date: 18 November 2008

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We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.
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42.79.-e Optical elements, devices, and systems
42.88.+h Environmental and radiation effects on optical elements, devices, and systems

Fabrication of submicron structures in nanoparticle/polymer composite by holographic lithography and reactive ion etching

A. Ping Zhang, Sailing He, Kyoung Tae Kim, Yong-Kyu Yoon, Ryszard Burzynski, Marek Samoc, and Paras N. Prasad

Appl. Phys. Lett. 93, 203509 (2008); http://dx.doi.org/10.1063/1.2998541 (3 pages) | Cited 2 times

Online Publication Date: 20 November 2008

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We report on the fabrication of nanoparticle/polymer submicron structures by combining holographic lithography and reactive ion etching. Silica nanoparticles are uniformly dispersed in a (SU8) polymer matrix at a high concentration, and in situ polymerization (cross-linking) is used to form a nanoparticle/polymer composite. Another photosensitive SU8 layer cast upon the nanoparticle/SU8 composite layer is structured through holographic lithography, whose pattern is finally transferred to the nanoparticle/SU8 layer by the reactive ion etching process. Honeycomb structures in a submicron scale are experimentally realized in the nanoparticle/SU8 composite.
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81.16.Nd Micro- and nanolithography
42.40.My Applications
81.65.Cf Surface cleaning, etching, patterning

Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography

R. J. T. Simms, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball

Appl. Phys. Lett. 93, 203510 (2008); http://dx.doi.org/10.1063/1.3035855 (3 pages) | Cited 6 times

Online Publication Date: 20 November 2008

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Current collapse in AlGaN/GaN high electron mobility transistors was investigated using time-resolved Raman thermography. The virtual-gate mechanism was visualized by changes in the device temperature distribution, illustrating an effective gate lengthening up to 0.6 um. Two devices with different levels of current collapse are compared, demonstrating that the effective gate length increases for greater current collapse. A comparison of two-dimensional drift diffusion simulations with experimental data was used to estimate a lower limit for the charge trapping density in the virtual-gate region. This was found to be of the order of 2×1013 cm−2 for a device exhibiting relatively little current collapse.
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85.30.Tv Field effect devices
78.30.Fs III-V and II-VI semiconductors
78.47.D- Time resolved spectroscopy (>1 psec)

Nanocrystalline diamond lateral vacuum microtriode

K. Subramanian, W. P. Kang, and J. L. Davidson

Appl. Phys. Lett. 93, 203511 (2008); http://dx.doi.org/10.1063/1.3036008 (3 pages) | Cited 11 times

Online Publication Date: 21 November 2008

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A vacuum field emission microtriode in lateral configuration utilizing nanocrystalline diamond is presented. The nanodiamond lateral triode is a completely integrated device comprising a fingerlike emitter geometry with an ∼ 15 nm tip radius of curvature, built-in gate, and anode with gate-cathode spacing of 3 μm and anode-cathode spacing of 12 μm. Triode characteristics, demonstrating gate-controlled emission current modulation with an anode current of 4 μA and high transconductance of 0.3 μS from a single emitter-finger at low device voltages (Vg<40 V and Va ∼ 65 V), are obtained. The anode-induced electron emission conforms to Fowler–Nordheim tunneling. These observations from the first diamond lateral vacuum microtriode demonstrate a robust device for integrated circuit-compatible, temperature-, and radiation-insensitive vacuum micro-nanoelectronics.
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84.47.+w Vacuum tubes
85.35.-p Nanoelectronic devices
85.45.-w Vacuum microelectronics

Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors

L. Höglund, P. O. Holtz, H. Pettersson, C. Asplund, Q. Wang, H. Malm, S. Almqvist, E. Petrini, and J. Y. Andersson

Appl. Phys. Lett. 93, 203512 (2008); http://dx.doi.org/10.1063/1.3033169 (3 pages) | Cited 2 times

Online Publication Date: 21 November 2008

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Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 μm was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 μm with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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