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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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Study of electric and magnetic properties of (Bi0.9Pb0.1) (Fe0.9Ti0.1)O3 nanomultiferroic system

K. Singh, R. K. Kotnala, and M. Singh

Appl. Phys. Lett. 93, 212902 (2008); http://dx.doi.org/10.1063/1.3030989 (3 pages) | Cited 15 times

Online Publication Date: 25 November 2008

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Multiferroic compound (Bi0.9Pb0.1)(Fe0.9Ti0.1)O3 (BPFTO), having particle size of 15–25 nm, was synthesized by solution combustion method. BPFTO shows the coexistence of ferroelectricity and magnetism at room temperature. Significant enhancement in magnetic moment with moderate value of the electrical polarization is observed for nano-BPFTO. Remanent polarization and maximum polarizations were 1.056 and 1.866 μC/cm2, respectively (at 20 kV/cm), with remanent magnetization of 285 memu/g. Such materials, possessing good value of dielectric constant and showing ferroelectric and ferromagnetism in same phase, are of great importance from technical point of view.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
75.30.Cr Saturation moments and magnetic susceptibilities
81.16.Be Chemical synthesis methods
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda

Appl. Phys. Lett. 93, 212903 (2008); http://dx.doi.org/10.1063/1.3036894 (3 pages) | Cited 11 times

Online Publication Date: 25 November 2008

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Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO(N)/Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (PN2 ∼ 100 Torr). The detailed analysis of “SiO2 equivalent thicknesses” for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.Mq Oxidation
82.30.-b Specific chemical reactions; reaction mechanisms
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.40.Gh Other heat and thermomechanical treatments
77.55.-g Dielectric thin films
85.30.Tv Field effect devices

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine

Appl. Phys. Lett. 93, 212904 (2008); http://dx.doi.org/10.1063/1.3033546 (3 pages) | Cited 10 times

Online Publication Date: 25 November 2008

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Thin La2O3 (LaGeOx) passivating layers combined with ZrO2 caps form a chemically stable bilayer gate stack on Ge with good electrical properties. The most important observation is that a higher-κ tetragonal zirconia phase coexists with the most commonly observed monoclinic, increasing the κ value of the oxide to about 32, thus benefiting the measured stack equivalent oxide thickness. This indicates that the ZrO2/La2O3 combination could be a promising candidate gate stack for Ge metal-oxide-semiconductor devices in terms of scalability.
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81.65.Rv Passivation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
79.60.Jv Interfaces; heterostructures; nanostructures
77.55.-g Dielectric thin films

Enhanced ferroelectric properties of LiNbO3 substituted Na0.5K0.5NbO3 lead-free thin films grown by chemical solution deposition

Chang Won Ahn, Euh Duck Jeong, Sun Young Lee, Hai Joon Lee, Sun Hee Kang, and Ill Won Kim

Appl. Phys. Lett. 93, 212905 (2008); http://dx.doi.org/10.1063/1.3037214 (3 pages) | Cited 24 times

Online Publication Date: 25 November 2008

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We have fabricated environmental friendly lead-free ferroelectric Na0.5K0.5NbO3 (NKN) and 0.95Na0.5K0.5NbO3–0.05LiNbO3 (0.95NKN-0.05LN) thin films by chemical solution deposition using metal-organic compounds, and studied the effects of LN substitution through the dielectric and ferroelectric properties. The small amount of LN substitution for NKN thin film led to a marked improvement in leakage current properties at the high electric field region. Furthermore, the 0.95NKN-0.05LN thin film (350 nm) displayed clear ferroelectricity with well saturated P-E hysteresis loop with 2Pr and 2Ec values of 19.5 μC/cm2 and 91 kV/cm, respectively. The 0.95NKN-0.05LN films will be interesting for applications in lead-free ferroelectric and piezoelectric devices.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
68.55.aj Insulators
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects

Terahertz wave generation via optical rectification from multiferroic BiFeO3

D. Talbayev, Seongsu Lee, S.-W. Cheong, and A. J. Taylor

Appl. Phys. Lett. 93, 212906 (2008); http://dx.doi.org/10.1063/1.3036526 (3 pages) | Cited 5 times

Online Publication Date: 26 November 2008

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We detected broadband coherent terahertz emission from multiferroic BiFeO3 after illuminating a high-quality bulk single ferroelectric domain crystal with an ∼ 100 fs optical pulse. The dependence of the emitted terahertz waveform on the energy and polarization of the optical pulse is consistent with the optical rectification mechanism of terahertz emission. We also report room-temperature terahertz optical constants of BiFeO3.
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78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

Myeongbum Pyun, Hyejung Choi, Ju-Bong Park, Dongsoo Lee, Musarrat Hasan, Rui Dong, Seung-Jae Jung, Joonmyoung Lee, Dong-jun Seong, Jaesik Yoon, and Hyunsang Hwang

Appl. Phys. Lett. 93, 212907 (2008); http://dx.doi.org/10.1063/1.3039064 (3 pages) | Cited 9 times

Online Publication Date: 26 November 2008

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We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 104 s at 85 °C, confirming good retention characteristics.
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84.30.Sk Pulse and digital circuits

Reversible charge injection in antiferroelectric thin films

A. Q. Jiang, T. A. Tang, S. Corkovic, and Q. Zhang

Appl. Phys. Lett. 93, 212908 (2008); http://dx.doi.org/10.1063/1.3039073 (3 pages) | Cited 6 times

Online Publication Date: 26 November 2008

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High-energy storage antiferroelectric capacitors operated in a high speed require the quick release of stored charges after the removal of the electrical field accompanying ferroelectric-to-antiferroelectric phase transition. However, the phase-transition time can vary from a few nanoseconds to milliseconds due to the reversible charge injection into the film to temporally stabilize the high-field ferroelectric phase. The consequent theoretical modeling discloses the nearly Ohmic contact of an antiferroelectric Au/Cr/Pb(Zr0.95Ti0.05)O3/Pt thin-film capacitor for the charge injection unlike the Schottky emission of a typical ferroelectric capacitor.
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77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
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Effects of thermal annealing on noise property and temperature coefficient of resistance of single-walled carbon nanotube films

Rongtao Lu, Guowei Xu, and Judy Z. Wu

Appl. Phys. Lett. 93, 213101 (2008); http://dx.doi.org/10.1063/1.3035848 (3 pages) | Cited 13 times

Online Publication Date: 24 November 2008

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The effect of thermal annealing on the electrical transport properties of purified and COOH-functionalized single-walled carbon nanotube (SWCNT) films has been investigated and the correlation between the noise property and temperature coefficient of resistance (TCR) has been derived. Thermal annealing has been found highly efficient to improve both noise and TCR properties of the SWCNT films, which is important to applications of SWCNT bolometers. While the improvement may be attributed mainly to the enhanced intertube coupling in the purified SWCNT films, a combined change in both intratube and intertube charge transport is responsible in the case of COOH-functionalized SWCNT films.
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73.50.Td Noise processes and phenomena
61.46.Fg Nanotubes
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.63.Fg Nanotubes

p-type conduction in nitrogen-doped ZnS nanoribbons

G. D. Yuan, W. J. Zhang, W. F. Zhang, X. Fan, I. Bello, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 93, 213102 (2008); http://dx.doi.org/10.1063/1.3025846 (3 pages) | Cited 13 times

Online Publication Date: 24 November 2008

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We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS–H bonding.
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73.61.Ga II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Optical nanolithography using a scanning near-field probe with an integrated light source

James W. Kingsley, Sumon K. Ray, Ali M. Adawi, Graham J. Leggett, and David G. Lidzey

Appl. Phys. Lett. 93, 213103 (2008); http://dx.doi.org/10.1063/1.3032912 (3 pages) | Cited 18 times

Online Publication Date: 24 November 2008

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An ultracompact near-field optical probe is described that is based on a single, integrated assembly consisting of a gallium nitride (GaN) light-emitting diode (LED), a microlens, and a cantilever assembly containing a hollow pyramidal probe with a subwavelength aperture at its apex. The LED emits ultraviolet light and may be used as a light source for near-field photolithographic exposure. Using this simple device compatible with many commercial atomic force microscope systems, it is possible to form nanostructures in photoresist with a resolution of 35 nm, corresponding to λ/10.
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81.16.Nd Micro- and nanolithography
42.82.Cr Fabrication techniques; lithography, pattern transfer

Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

O. Demichel, F. Oehler, P. Noé, V. Calvo, N. Pauc, P. Gentile, T. Baron, D. Peyrade, and N. Magnea

Appl. Phys. Lett. 93, 213104 (2008); http://dx.doi.org/10.1063/1.3021359 (3 pages) | Cited 4 times

Online Publication Date: 24 November 2008

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We study by low temperature photoluminescence measurements the electronic states of silicon nanowires obtained by copper catalyzed chemical vapor deposition and compare them with those of wires made by etching silicon on the insulator structure. Thermal oxidation of nanowires appears to be absolutely necessary to passivate surface states and to enhance radiative recombinations at the silicon band gap. The study of the behavior of this transition as a function of temperature and pump power demonstrates that it involves the phonon assisted recombination of free carriers. The recombination energy appears at the silicon band gap, renormalized by exchange and correlation interactions favored by spatial confinement.
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78.55.Ap Elemental semiconductors
72.30.+q High-frequency effects; plasma effects
73.21.Hb Quantum wires
78.67.Lt Quantum wires
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
63.22.Gh Nanotubes and nanowires

Electromigration-induced shock waves on metal thin films

R. Mark Bradley

Appl. Phys. Lett. 93, 213105 (2008); http://dx.doi.org/10.1063/1.3037225 (3 pages) | Cited 5 times

Online Publication Date: 24 November 2008

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It is shown that surface electromigration can produce shock waves that retain their form as they propagate on the edge of a single-crystal metal thin film. We explain why these shocks form, determine their velocity, and find their internal structure. If two shocks are present initially, they collide and fuse to form a single shock.
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66.30.Qa Electromigration
62.50.Ef Shock wave effects in solids and liquids
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Gigahertz photothermal effect in silicon waveguides

W. H. P. Pernice, Mo Li, and H. X. Tang

Appl. Phys. Lett. 93, 213106 (2008); http://dx.doi.org/10.1063/1.3036957 (3 pages) | Cited 1 time

Online Publication Date: 25 November 2008

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We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach–Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a −log(f) dependence, while a f−1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.
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42.82.Et Waveguides, couplers, and arrays
84.40.-x Radiowave and microwave (including millimeter wave) technology

Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric

Wangyang Fu, Zhi Xu, Kaihui Liu, Wenlong Wang, Xuedong Bai, and Enge Wang

Appl. Phys. Lett. 93, 213107 (2008); http://dx.doi.org/10.1063/1.3037219 (3 pages) | Cited 1 time

Online Publication Date: 26 November 2008

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In this letter, amorphous Bi1.5Zn1.0Nb1.5O7 films with large permittivity ( ∼ 70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature ( ∼ 100 °C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (<3 V), a high carrier mobility ( ∼ 42 cm2/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi1.5Zn1.0Nb1.5O7 dielectric is a promising candidate for high-performance flexible electronics.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
73.61.Ga II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Localized heating in nanoscale Pt constrictions measured using blackbody radiation emission

Daniel R. Ward, Naomi J. Halas, and Douglas Natelson

Appl. Phys. Lett. 93, 213108 (2008); http://dx.doi.org/10.1063/1.3039060 (3 pages) | Cited 8 times

Online Publication Date: 26 November 2008

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Using thermal emission microscopy, we investigate heating in Pt nanowires before and during electromigration. The wires are observed to reach temperatures in excess of 1000 K. This is beyond the thermal decomposition threshold for many organic molecules of interest for single molecule measurements with electromigrated nanogaps. Blackbody spectra of the hot Pt wires are measured and found to agree well with finite element modeling simulations of the electrical and thermal transport.
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73.22.-f Electronic structure of nanoscale materials and related systems
66.30.Qa Electromigration

Surface plasmon excitation of Au and Ag in scanning probe energy loss spectroscopy

A. Pulisciano, S. J. Park, and R. E. Palmer

Appl. Phys. Lett. 93, 213109 (2008); http://dx.doi.org/10.1063/1.3006435 (3 pages) | Cited 9 times

Online Publication Date: 26 November 2008

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We explore the incident energy dependence of the electronic excitation spectra of Au and Ag films in scanning probe energy loss spectroscopy (SPELS) and also high resolution electron energy loss spectroscopy. We show that the spectra obtained in SPELS depend strongly on the incident electron beam energy. In the case of Au, interband transitions mask the surface plasmon unless the field emission voltage is reduced to ∼ 100 V, whereas there is a clear surface plasmon peak above 300 V for Ag.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.20.Uv Electron energy loss spectroscopy
79.70.+q Field emission, ionization, evaporation, and desorption
68.55.-a Thin film structure and morphology
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Solution-processed poly(3-hexylthiophene) vertical organic transistor

Sheng-Han Li, Zheng Xu, Guanwen Yang, Liping Ma, and Yang Yang

Appl. Phys. Lett. 93, 213301 (2008); http://dx.doi.org/10.1063/1.3030990 (3 pages) | Cited 6 times

Online Publication Date: 25 November 2008

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The fabrication and operation of a solution-processed vertical organic transistor are now demonstrated. The vertical structure provides a large cross section and a short channel length to counter the inherent limitations of the organic materials. The operation of a vertical organic transistor relies on a transition metal oxide layer, V2O5, to lower the carrier injection barrier at the organic/metal interface. The effect of the oxide thickness was examined to verify the role of transition metal oxide in device operation. By studying the device performance at different temperatures and in solvent environments, an operating mechanism that occurs via an ion drift and doping process was proposed. The drift direction of the dissolved Li+ ion can be controlled by altering the gate voltage bias in order to change the carrier injection barrier.
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85.30.Tv Field effect devices
FREE

Dynamic bias stress current instability caused by charge trapping and detrapping in pentacene thin film transistors

T. Miyadera, T. Minari, S. D. Wang, and K. Tsukagoshi

Appl. Phys. Lett. 93, 213302 (2008); http://dx.doi.org/10.1063/1.3037213 (3 pages) | Cited 4 times

Online Publication Date: 26 November 2008

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The current instability in pentacene organic thin film transistors (OTFTs) under dynamic bias stress was investigated. Current instability is strongly influenced by pulse duty ratio and pulse on-period and off-period voltages, but is independent of pulse frequency. A stable on-current without current instability was achieved by controlling the pulse duty ratio and pulse voltage. On the basis of the experimental results, a reversible transition model of dynamic charge trapping and detrapping in pentacene OTFTs is proposed, and trapping and detrapping time constants were estimated.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
FREE

Solution-processed carbon electrodes for organic field-effect transistors

Hiroshi Wada and Takehiko Mori

Appl. Phys. Lett. 93, 213303 (2008); http://dx.doi.org/10.1063/1.3037226 (3 pages) | Cited 15 times

Online Publication Date: 26 November 2008

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Bottom-contact organic transistors with carbon-paste electrodes are fabricated by means of the surface selective deposition technique, where a carbon-paste solution is deposited on the region in which the self-assembled monolayers are removed by ultraviolet light irradiation. The resulting bottom-contact pentacene transistor realizes high performance of 1.0 cm2 V−1 s−1. The present method is applied to solution-processed polythiophene transistors as well as n-channel materials.
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85.30.Tv Field effect devices
FREE

Metal patterning using maskless vacuum evaporation process based on selective deposition of photochromic diarylethene

Rie Takagi, Kyoko Masui, Shinichiro Nakamura, and Tsuyoshi Tsujioka

Appl. Phys. Lett. 93, 213304 (2008); http://dx.doi.org/10.1063/1.3028650 (3 pages) | Cited 13 times

Online Publication Date: 26 November 2008

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We developed an electrode/wiring patterning method that does not employ evaporation shadow masks; this method is based on selective metal deposition of photochromic diarylethene (DAE). In the selective Mg deposition based on the photoisomerization of DAE, Mg vapor atoms are deposited only on colored DAE film obtained upon UV irradiation, but not on uncolored film. We demonstrated fine metal Mg patterning with a minimum width of 3 μm and the preparation of a patterned cathode. The selective metal deposition method has significant potential for preparing fine electrodes/wiring for various organic electronic devices.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Hp Processes caused by visible and UV light
82.30.Qt Isomerization and rearrangement
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
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Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors

X. J. Zheng, J. Sun, J. J. Zhang, M. H. Tang, and W. Li

Appl. Phys. Lett. 93, 213501 (2008); http://dx.doi.org/10.1063/1.3021015 (3 pages) | Cited 1 time

Online Publication Date: 24 November 2008

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It is recognized that the conventional model for metal-ferroelectric-insulator-silicon (MFIS) capacitor is always not consistent with the experimental observation very well due to negligence of the history-dependent electric field effect. In this letter, combining the switching physics of ferroelectric with silicon physics, an improved model is proposed to investigate the capacitance-voltage (C-V) characteristic and memory window. For two MFIS capacitors with SrBi2Ta2O9 and Bi3.25La0.75Ti3O12 ferroelectric layers, C-V characteristic and memory window were evaluated, and the results are more consistent with the previous experiments than that of the Lue model. The improved model could be extendedly applied to MFIS structure devices.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films

The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach

Steve S. Chung and C. M. Chang

Appl. Phys. Lett. 93, 213502 (2008); http://dx.doi.org/10.1063/1.3036681 (3 pages) | Cited 2 times

Online Publication Date: 24 November 2008

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In this paper, the trapping/detrapping in high-k gate dielectrics has been analyzed by gate current random telegraph noise (IG) measurement. Gate current is suppressed when traps capture electrons and recovers for empty traps. By statistically extracting capture and emission times, we can understand the trap properties. Besides, the influence will be understood by observing the variation of Gate current fluctuation. Through the analysis of the device after soft-breakdown (SBD), the deterioration of the dielectric will change the capture cross section. Moreover, the traps in the SBD path have been identified as the cause of a huge increase in the gate leakage.
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77.22.Jp Dielectric breakdown and space-charge effects
73.50.Td Noise processes and phenomena
77.55.-g Dielectric thin films

High program efficiency of p-type floating gate in n-channel split-gate embedded flash memory

Hung-Sheng Shih, Shang-Wei Fang, An-Chi Kang, Ya-Chin King, and Chrong-Jung Lin

Appl. Phys. Lett. 93, 213503 (2008); http://dx.doi.org/10.1063/1.3023057 (3 pages) | Cited 1 time

Online Publication Date: 24 November 2008

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This work proposes a novel p-type boron-doped floating gate for n-channel split-gate flash memory. A lower program voltage, with a programming time of 7 μs, results in five times of the conventional source-side injection programming efficiency, a 5% wider program/erase window, and more reliable endurance characteristics. Additionally, a 2 Mbit embedded flash Intellectual Property (IP) has been successfully implemented and statistically compared. The lower program voltage reduces concerns around the high-voltage decoder, the charge pump efficiency, and the array efficiency beyond 90 nm nodes. The new p-doped split-gate structure provides a very promising solution for advanced embedded split-gate flash memory beyond the 90 nm node.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Giant magnetoelectric effect in mechanically clamped heterostructures of magnetostrictive alloy and piezoelectric crystal-alloy cymbal

Yaojin Wang, Siu Wing Or, Helen Lai Wa Chan, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 93, 213504 (2008); http://dx.doi.org/10.1063/1.3037201 (3 pages) | Cited 7 times

Online Publication Date: 26 November 2008

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We experimentally and theoretically report a giant magnetoelectric (ME) effect in a heterostructure made by clamping a bar-shaped magnetostrictive Tb0.3Dy0.7Fe1.92 (Terfenol-D) alloy actuator and a cymbal-type piezoelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3(PMN–PT) (PMN-PT) single crystal-brass alloy transducer in a brass alloy frame. The reported ME effect originates from the stress-mediated product of the magnetostrictive effect in the Terfenol-D bar actuator and the mechanically transformed/amplified piezoelectric effect in the PMN PT-brass cymbal transducer under mechanically clamped conditions. The heterostructure exhibits a giant ME voltage coefficient (αV) of 440 mV/Oe at an optimal magnetic bias field of 400 Oe besides showing good linearity between the induced ME voltage and the applied ac magnetic field in the field range of 10−3–10 Oe. This αV is larger than that of conventional Terfenol-D/PMN-PT laminated composites.
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75.80.+q Magnetomechanical effects, magnetostriction
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors

Jong H. Na, M. Kitamura, and Y. Arakawa

Appl. Phys. Lett. 93, 213505 (2008); http://dx.doi.org/10.1063/1.3039779 (3 pages) | Cited 20 times

Online Publication Date: 26 November 2008

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Complementary inverters composed of pentacene for the p-channel thin-film transistors (TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been fabricated on glass substrates. The p- and n-channel TFTs have field-effect mobilities of 0.6 and 17.1 cm2/V s, respectively, and inverters yield a high gain of ∼ 56. Complementary five-stage ring oscillator exhibits a good dynamic operation with an output frequency of 200 Hz at 10 V. Since both channel layers are stable in air and can be formed by room temperature deposition process, the hybrid circuits are applicable to flexible electronic devices.
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85.30.Tv Field effect devices
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