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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors

X. J. Zheng, J. Sun, J. J. Zhang, M. H. Tang, and W. Li

Appl. Phys. Lett. 93, 213501 (2008); http://dx.doi.org/10.1063/1.3021015 (3 pages) | Cited 1 time

Online Publication Date: 24 November 2008

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It is recognized that the conventional model for metal-ferroelectric-insulator-silicon (MFIS) capacitor is always not consistent with the experimental observation very well due to negligence of the history-dependent electric field effect. In this letter, combining the switching physics of ferroelectric with silicon physics, an improved model is proposed to investigate the capacitance-voltage (C-V) characteristic and memory window. For two MFIS capacitors with SrBi2Ta2O9 and Bi3.25La0.75Ti3O12 ferroelectric layers, C-V characteristic and memory window were evaluated, and the results are more consistent with the previous experiments than that of the Lue model. The improved model could be extendedly applied to MFIS structure devices.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films

The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach

Steve S. Chung and C. M. Chang

Appl. Phys. Lett. 93, 213502 (2008); http://dx.doi.org/10.1063/1.3036681 (3 pages) | Cited 2 times

Online Publication Date: 24 November 2008

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In this paper, the trapping/detrapping in high-k gate dielectrics has been analyzed by gate current random telegraph noise (IG) measurement. Gate current is suppressed when traps capture electrons and recovers for empty traps. By statistically extracting capture and emission times, we can understand the trap properties. Besides, the influence will be understood by observing the variation of Gate current fluctuation. Through the analysis of the device after soft-breakdown (SBD), the deterioration of the dielectric will change the capture cross section. Moreover, the traps in the SBD path have been identified as the cause of a huge increase in the gate leakage.
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77.22.Jp Dielectric breakdown and space-charge effects
73.50.Td Noise processes and phenomena
77.55.-g Dielectric thin films

High program efficiency of p-type floating gate in n-channel split-gate embedded flash memory

Hung-Sheng Shih, Shang-Wei Fang, An-Chi Kang, Ya-Chin King, and Chrong-Jung Lin

Appl. Phys. Lett. 93, 213503 (2008); http://dx.doi.org/10.1063/1.3023057 (3 pages) | Cited 1 time

Online Publication Date: 24 November 2008

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This work proposes a novel p-type boron-doped floating gate for n-channel split-gate flash memory. A lower program voltage, with a programming time of 7 μs, results in five times of the conventional source-side injection programming efficiency, a 5% wider program/erase window, and more reliable endurance characteristics. Additionally, a 2 Mbit embedded flash Intellectual Property (IP) has been successfully implemented and statistically compared. The lower program voltage reduces concerns around the high-voltage decoder, the charge pump efficiency, and the array efficiency beyond 90 nm nodes. The new p-doped split-gate structure provides a very promising solution for advanced embedded split-gate flash memory beyond the 90 nm node.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

Giant magnetoelectric effect in mechanically clamped heterostructures of magnetostrictive alloy and piezoelectric crystal-alloy cymbal

Yaojin Wang, Siu Wing Or, Helen Lai Wa Chan, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 93, 213504 (2008); http://dx.doi.org/10.1063/1.3037201 (3 pages) | Cited 8 times

Online Publication Date: 26 November 2008

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We experimentally and theoretically report a giant magnetoelectric (ME) effect in a heterostructure made by clamping a bar-shaped magnetostrictive Tb0.3Dy0.7Fe1.92 (Terfenol-D) alloy actuator and a cymbal-type piezoelectric 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3(PMN–PT) (PMN-PT) single crystal-brass alloy transducer in a brass alloy frame. The reported ME effect originates from the stress-mediated product of the magnetostrictive effect in the Terfenol-D bar actuator and the mechanically transformed/amplified piezoelectric effect in the PMN PT-brass cymbal transducer under mechanically clamped conditions. The heterostructure exhibits a giant ME voltage coefficient (αV) of 440 mV/Oe at an optimal magnetic bias field of 400 Oe besides showing good linearity between the induced ME voltage and the applied ac magnetic field in the field range of 10−3–10 Oe. This αV is larger than that of conventional Terfenol-D/PMN-PT laminated composites.
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75.80.+q Magnetomechanical effects, magnetostriction
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors

Jong H. Na, M. Kitamura, and Y. Arakawa

Appl. Phys. Lett. 93, 213505 (2008); http://dx.doi.org/10.1063/1.3039779 (3 pages) | Cited 20 times

Online Publication Date: 26 November 2008

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Complementary inverters composed of pentacene for the p-channel thin-film transistors (TFTs) and amorphous indium gallium zinc oxide for the n-channel TFTs have been fabricated on glass substrates. The p- and n-channel TFTs have field-effect mobilities of 0.6 and 17.1 cm2/V s, respectively, and inverters yield a high gain of ∼ 56. Complementary five-stage ring oscillator exhibits a good dynamic operation with an output frequency of 200 Hz at 10 V. Since both channel layers are stable in air and can be formed by room temperature deposition process, the hybrid circuits are applicable to flexible electronic devices.
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85.30.Tv Field effect devices
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