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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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An extremely high dielectric constant in bismuth-based pyrochlore multilayer film capacitors combined with percolative structure

Nguyen Duy Cuong, Jun-Ku Ahn, Kyung-Woo Park, Nak-Jin Seong, and Soon-Gil Yoon

Appl. Phys. Lett. 93, 212901 (2008); http://dx.doi.org/10.1063/1.3013362 (3 pages) | Cited 4 times

Online Publication Date: 24 November 2008

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The percolative film capacitor structure of Pt/Bi2Mg2/3Nb4/3O7 [BMN(Ar) films deposited at pure argon atmosphere]/Pt was addressed for achievement of a high dielectric constant in the films deposited at room temperature by radio frequency magnetron sputtering. The deterioration of the leakage current characteristics in the percolative capacitor was mitigated using the multilayer films of BMN(O)/BMN(Ar)/BMN(O), where ultrathin BMN(O) films were deposited at a mixed atmosphere of argon and oxygen. An extremely high dielectric constant of 120 and a low leakage current density of 6×10−6 A/cm2 at 3 V were observed in percolative BMN multilayer films as-deposited at room temperature.
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77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering
84.32.Tt Capacitors
68.65.Ac Multilayers

Study of electric and magnetic properties of (Bi0.9Pb0.1) (Fe0.9Ti0.1)O3 nanomultiferroic system

K. Singh, R. K. Kotnala, and M. Singh

Appl. Phys. Lett. 93, 212902 (2008); http://dx.doi.org/10.1063/1.3030989 (3 pages) | Cited 15 times

Online Publication Date: 25 November 2008

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Multiferroic compound (Bi0.9Pb0.1)(Fe0.9Ti0.1)O3 (BPFTO), having particle size of 15–25 nm, was synthesized by solution combustion method. BPFTO shows the coexistence of ferroelectricity and magnetism at room temperature. Significant enhancement in magnetic moment with moderate value of the electrical polarization is observed for nano-BPFTO. Remanent polarization and maximum polarizations were 1.056 and 1.866 μC/cm2, respectively (at 20 kV/cm), with remanent magnetization of 285 memu/g. Such materials, possessing good value of dielectric constant and showing ferroelectric and ferromagnetism in same phase, are of great importance from technical point of view.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
75.30.Cr Saturation moments and magnetic susceptibilities
81.16.Be Chemical synthesis methods
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Control of oxidation and reduction reactions at HfSiO/Si interfaces through N exposure or incorporation

H. Kamada, T. Tanimura, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, and K. Ikeda

Appl. Phys. Lett. 93, 212903 (2008); http://dx.doi.org/10.1063/1.3036894 (3 pages) | Cited 11 times

Online Publication Date: 25 November 2008

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Using synchrotron-radiation photoemission spectroscopy, we have investigated oxidation and reduction reactions of HfSiO(N)/Si gate stack structures annealed in a N2 or O2 atmosphere. It is found that both oxidation and reduction reactions can be suppressed by using nitrogen-incorporated HfSiO films in the annealing process at proper partial pressure of N2 gas (PN2 ∼ 100 Torr). The detailed analysis of “SiO2 equivalent thicknesses” for annealed HfSiO and HfSiON films reveals that ambient N2 gas suppresses only the reduction reaction, while nitrogen atoms incorporated in dielectrics suppress both oxidation and reduction reactions.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.Mq Oxidation
82.30.-b Specific chemical reactions; reaction mechanisms
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.40.Gh Other heat and thermomechanical treatments
77.55.-g Dielectric thin films
85.30.Tv Field effect devices

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine

Appl. Phys. Lett. 93, 212904 (2008); http://dx.doi.org/10.1063/1.3033546 (3 pages) | Cited 10 times

Online Publication Date: 25 November 2008

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Thin La2O3 (LaGeOx) passivating layers combined with ZrO2 caps form a chemically stable bilayer gate stack on Ge with good electrical properties. The most important observation is that a higher-κ tetragonal zirconia phase coexists with the most commonly observed monoclinic, increasing the κ value of the oxide to about 32, thus benefiting the measured stack equivalent oxide thickness. This indicates that the ZrO2/La2O3 combination could be a promising candidate gate stack for Ge metal-oxide-semiconductor devices in terms of scalability.
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81.65.Rv Passivation
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
79.60.Jv Interfaces; heterostructures; nanostructures
77.55.-g Dielectric thin films

Enhanced ferroelectric properties of LiNbO3 substituted Na0.5K0.5NbO3 lead-free thin films grown by chemical solution deposition

Chang Won Ahn, Euh Duck Jeong, Sun Young Lee, Hai Joon Lee, Sun Hee Kang, and Ill Won Kim

Appl. Phys. Lett. 93, 212905 (2008); http://dx.doi.org/10.1063/1.3037214 (3 pages) | Cited 24 times

Online Publication Date: 25 November 2008

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We have fabricated environmental friendly lead-free ferroelectric Na0.5K0.5NbO3 (NKN) and 0.95Na0.5K0.5NbO3–0.05LiNbO3 (0.95NKN-0.05LN) thin films by chemical solution deposition using metal-organic compounds, and studied the effects of LN substitution through the dielectric and ferroelectric properties. The small amount of LN substitution for NKN thin film led to a marked improvement in leakage current properties at the high electric field region. Furthermore, the 0.95NKN-0.05LN thin film (350 nm) displayed clear ferroelectricity with well saturated P-E hysteresis loop with 2Pr and 2Ec values of 19.5 μC/cm2 and 91 kV/cm, respectively. The 0.95NKN-0.05LN films will be interesting for applications in lead-free ferroelectric and piezoelectric devices.
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77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
68.55.aj Insulators
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects

Terahertz wave generation via optical rectification from multiferroic BiFeO3

D. Talbayev, Seongsu Lee, S.-W. Cheong, and A. J. Taylor

Appl. Phys. Lett. 93, 212906 (2008); http://dx.doi.org/10.1063/1.3036526 (3 pages) | Cited 5 times

Online Publication Date: 26 November 2008

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We detected broadband coherent terahertz emission from multiferroic BiFeO3 after illuminating a high-quality bulk single ferroelectric domain crystal with an ∼ 100 fs optical pulse. The dependence of the emitted terahertz waveform on the energy and polarization of the optical pulse is consistent with the optical rectification mechanism of terahertz emission. We also report room-temperature terahertz optical constants of BiFeO3.
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78.70.Gq Microwave and radio-frequency interactions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications

Myeongbum Pyun, Hyejung Choi, Ju-Bong Park, Dongsoo Lee, Musarrat Hasan, Rui Dong, Seung-Jae Jung, Joonmyoung Lee, Dong-jun Seong, Jaesik Yoon, and Hyunsang Hwang

Appl. Phys. Lett. 93, 212907 (2008); http://dx.doi.org/10.1063/1.3039064 (3 pages) | Cited 9 times

Online Publication Date: 26 November 2008

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We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 104 s at 85 °C, confirming good retention characteristics.
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84.30.Sk Pulse and digital circuits

Reversible charge injection in antiferroelectric thin films

A. Q. Jiang, T. A. Tang, S. Corkovic, and Q. Zhang

Appl. Phys. Lett. 93, 212908 (2008); http://dx.doi.org/10.1063/1.3039073 (3 pages) | Cited 6 times

Online Publication Date: 26 November 2008

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High-energy storage antiferroelectric capacitors operated in a high speed require the quick release of stored charges after the removal of the electrical field accompanying ferroelectric-to-antiferroelectric phase transition. However, the phase-transition time can vary from a few nanoseconds to milliseconds due to the reversible charge injection into the film to temporally stabilize the high-field ferroelectric phase. The consequent theoretical modeling discloses the nearly Ohmic contact of an antiferroelectric Au/Cr/Pb(Zr0.95Ti0.05)O3/Pt thin-film capacitor for the charge injection unlike the Schottky emission of a typical ferroelectric capacitor.
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77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
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