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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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Carrier concentration dependence of terahertz transmission on conducting ZnO films

Guohong Ma, Dong Li, Hong Ma, Jie Shen, Chenguo Wu, Jin Ge, Shuhong Hu, and Ning Dai

Appl. Phys. Lett. 93, 211101 (2008); http://dx.doi.org/10.1063/1.3036708 (3 pages) | Cited 7 times

Online Publication Date: 24 November 2008

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With the dc reactive magnetron sputtering method, conducting ZnO thin films with different carrier concentrations on glass substrate were fabricated. The dielectric responses of the ZnO films are characterized with terahertz time-domain spectroscopy. Frequency-dependent conductivity, power absorption, and refractive index are obtained, and the experimental results can be well reproduced with the classic Drude model. Our results reveal that by adjusting the carrier concentration of the ZnO film, the conducting ZnO film can serve as broadband antireflection coatings for substrates and optics in the terahertz frequency range.
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73.61.Ga II-VI semiconductors
78.70.Gq Microwave and radio-frequency interactions
81.15.Cd Deposition by sputtering
68.55.ag Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Hf II-VI semiconductors

Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating

David Paboeuf, Gaëlle Lucas-Leclin, Patrick Georges, Nicolas Michel, Michel Krakowski, Jun Lim, Slawomir Sujecki, and Eric Larkins

Appl. Phys. Lett. 93, 211102 (2008); http://dx.doi.org/10.1063/1.3036896 (3 pages) | Cited 12 times

Online Publication Date: 25 November 2008

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We present the phase locking of an array of index-guided tapered laser diodes. An external cavity based on the self-imaging Talbot effect has been built. A volume Bragg grating is used as the output coupler to stabilize and narrow the spectrum at 976 nm. A power of 1.7 W is achieved in the in-phase single main lobe mode with a high visibility. We have checked that each emitter is locked to the Bragg wavelength with a 100 pm spectrum linewidth. The experimental results compare well with numerical simulations performed with two-dimensional wide-angle finite difference beam propagation method.
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42.55.Px Semiconductor lasers; laser diodes
02.70.Bf Finite-difference methods
42.30.-d Imaging and optical processing
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Polarization-selective resonant photonic crystal photodetector

Jin-Kyu Yang, Min-Kyo Seo, In-Kag Hwang, Sung-Bock Kim, and Yong-Hee Lee

Appl. Phys. Lett. 93, 211103 (2008); http://dx.doi.org/10.1063/1.3036954 (3 pages) | Cited 10 times

Online Publication Date: 25 November 2008

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Resonance-assisted photonic crystal (PhC) slab photodetectors are demonstrated by utilizing six 7-nm-thick InGaAsP quantum wells. In order to encourage efficient photon coupling into the slab from the vertical direction, a coupled-dipole-cavity-array PhC structure is employed. Inheriting the characteristics of the dipole mode, this resonant detector is highly polarization selective and shows a 22-nm-wide spectral width. The maximum responsivity of 0.28 A/W, which is >20 times larger than that of the identical detector without the pattern, is observed near 1.56 μm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.70.Qs Photonic bandgap materials
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

High order mode oscillation in a terahertz photonic-band-gap multibeam reflex klystron

Kyu-Ha Jang, Seok-Gy Jeon, Jung-Il Kim, Jong-Hyo Won, Jin-Kyu So, Seung-Ho Bak, Anurag Srivastava, Sun-Shin Jung, and Gun-Sik Park

Appl. Phys. Lett. 93, 211104 (2008); http://dx.doi.org/10.1063/1.3037026 (3 pages) | Cited 5 times

Online Publication Date: 25 November 2008

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TM330-like higher order mode was excited in a multibeam reflex klystron oscillator employing a hybrid photonic-band-gap (PBG) cavity using a three-dimensional particle-in-cell simulation. One side of a conventional metal cavity was replaced with a dielectric photonic crystal lattice to form a hybrid PBG resonator that uses lattice band-gap effects resulting in a more uniform field of a higher order mode as well as the exclusion of some conventional-cavity-type modes, thereby reducing mode competition. Simulated reflex klystron in the hybrid PBG cavity produced an output power much higher than could be delivered in a conventional metal cavity.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Theory of exciton-polariton lasing at room temperature in ZnO microcavities

R. Johne, D. D. Solnyshkov, and G. Malpuech

Appl. Phys. Lett. 93, 211105 (2008); http://dx.doi.org/10.1063/1.3036895 (3 pages) | Cited 15 times

Online Publication Date: 26 November 2008

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We use the semiclassical Boltzmann equations to describe the exciton-polariton relaxation in a bulk ZnO microcavity at room temperature. We present kinetic phase diagrams which report the lasing threshold versus the main sample parameters, such as the polariton lifetime or the value of the Rabi splitting. We find that the polariton laser is operating close to the thermodynamic equilibrium in most cases which makes advantageous the use of microcavities showing very large Rabi splittings as it is the case in ZnO structures. We find that room temperature polariton lasing could be observed in the samples presently available.
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71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
71.35.-y Excitons and related phenomena
42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers

Single mode emitting ridge waveguide quantum cascade lasers coupled to an active ring resonator filter

Julia Semmel, Wolfgang Kaiser, Holger Hofmann, Sven Höfling, and Alfred Forchel

Appl. Phys. Lett. 93, 211106 (2008); http://dx.doi.org/10.1063/1.3039057 (3 pages) | Cited 5 times

Online Publication Date: 26 November 2008

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Quantum cascade ridge waveguide lasers with coupled ring resonators have been fabricated. Coupling of an actively pumped microring resonator to a ridge waveguide device allows for filtering the numerous Fabry–Pérot modes emerging in the ridge waveguide. Due to the large free spectral range of the ring resonators mode selection is accomplished, resulting in stable single mode emission for an optimized design. Thus, side mode suppression ratios of up to 26 dB over a temperature range of 140 K are attained by on-chip coupling of a ridge waveguide device with a microsquare ring resonator. The tuning rate of the microring resonator laser is 0.40 nm/K. Output powers of several milliwatts are obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Sa Microcavity and microdisk lasers
42.60.Fc Modulation, tuning, and mode locking

High quantum efficiency back-illuminated GaN avalanche photodiodes

C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, and D. Silversmith

Appl. Phys. Lett. 93, 211107 (2008); http://dx.doi.org/10.1063/1.3039061 (3 pages) | Cited 4 times

Online Publication Date: 26 November 2008

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Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. Dependency of gain and leakage current on mesa area for these heterojunction APDs were studied. Back-illumination via different wavelength sources was used to demonstrate the advantages of hole-initiated multiplication in GaN APDs.
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85.60.Dw Photodiodes; phototransistors; photoresistors
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