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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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Effects of thermal annealing on noise property and temperature coefficient of resistance of single-walled carbon nanotube films

Rongtao Lu, Guowei Xu, and Judy Z. Wu

Appl. Phys. Lett. 93, 213101 (2008); http://dx.doi.org/10.1063/1.3035848 (3 pages) | Cited 13 times

Online Publication Date: 24 November 2008

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The effect of thermal annealing on the electrical transport properties of purified and COOH-functionalized single-walled carbon nanotube (SWCNT) films has been investigated and the correlation between the noise property and temperature coefficient of resistance (TCR) has been derived. Thermal annealing has been found highly efficient to improve both noise and TCR properties of the SWCNT films, which is important to applications of SWCNT bolometers. While the improvement may be attributed mainly to the enhanced intertube coupling in the purified SWCNT films, a combined change in both intratube and intertube charge transport is responsible in the case of COOH-functionalized SWCNT films.
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73.50.Td Noise processes and phenomena
61.46.Fg Nanotubes
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
73.63.Fg Nanotubes

p-type conduction in nitrogen-doped ZnS nanoribbons

G. D. Yuan, W. J. Zhang, W. F. Zhang, X. Fan, I. Bello, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 93, 213102 (2008); http://dx.doi.org/10.1063/1.3025846 (3 pages) | Cited 13 times

Online Publication Date: 24 November 2008

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We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS–H bonding.
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73.61.Ga II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
61.72.Cc Kinetics of defect formation and annealing

Optical nanolithography using a scanning near-field probe with an integrated light source

James W. Kingsley, Sumon K. Ray, Ali M. Adawi, Graham J. Leggett, and David G. Lidzey

Appl. Phys. Lett. 93, 213103 (2008); http://dx.doi.org/10.1063/1.3032912 (3 pages) | Cited 18 times

Online Publication Date: 24 November 2008

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An ultracompact near-field optical probe is described that is based on a single, integrated assembly consisting of a gallium nitride (GaN) light-emitting diode (LED), a microlens, and a cantilever assembly containing a hollow pyramidal probe with a subwavelength aperture at its apex. The LED emits ultraviolet light and may be used as a light source for near-field photolithographic exposure. Using this simple device compatible with many commercial atomic force microscope systems, it is possible to form nanostructures in photoresist with a resolution of 35 nm, corresponding to λ/10.
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81.16.Nd Micro- and nanolithography
42.82.Cr Fabrication techniques; lithography, pattern transfer

Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

O. Demichel, F. Oehler, P. Noé, V. Calvo, N. Pauc, P. Gentile, T. Baron, D. Peyrade, and N. Magnea

Appl. Phys. Lett. 93, 213104 (2008); http://dx.doi.org/10.1063/1.3021359 (3 pages) | Cited 4 times

Online Publication Date: 24 November 2008

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We study by low temperature photoluminescence measurements the electronic states of silicon nanowires obtained by copper catalyzed chemical vapor deposition and compare them with those of wires made by etching silicon on the insulator structure. Thermal oxidation of nanowires appears to be absolutely necessary to passivate surface states and to enhance radiative recombinations at the silicon band gap. The study of the behavior of this transition as a function of temperature and pump power demonstrates that it involves the phonon assisted recombination of free carriers. The recombination energy appears at the silicon band gap, renormalized by exchange and correlation interactions favored by spatial confinement.
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78.55.Ap Elemental semiconductors
72.30.+q High-frequency effects; plasma effects
73.21.Hb Quantum wires
78.67.Lt Quantum wires
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
63.22.Gh Nanotubes and nanowires

Electromigration-induced shock waves on metal thin films

R. Mark Bradley

Appl. Phys. Lett. 93, 213105 (2008); http://dx.doi.org/10.1063/1.3037225 (3 pages) | Cited 5 times

Online Publication Date: 24 November 2008

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It is shown that surface electromigration can produce shock waves that retain their form as they propagate on the edge of a single-crystal metal thin film. We explain why these shocks form, determine their velocity, and find their internal structure. If two shocks are present initially, they collide and fuse to form a single shock.
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66.30.Qa Electromigration
62.50.Ef Shock wave effects in solids and liquids
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Gigahertz photothermal effect in silicon waveguides

W. H. P. Pernice, Mo Li, and H. X. Tang

Appl. Phys. Lett. 93, 213106 (2008); http://dx.doi.org/10.1063/1.3036957 (3 pages) | Cited 1 time

Online Publication Date: 25 November 2008

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We present a theoretical and experimental study of the frequency response of the photothermal effect in silicon waveguides. The effect is studied for modulation frequencies up to 3 GHz using integrated photonic circuits in Mach–Zehnder and ring oscillator configurations. The thermal behavior of silicon waveguides is described by a diffusive substrate heating model. In the low-frequency regime, the frequency response follows a −log(f) dependence, while a f−1/2 dependence is found in the high-frequency regime. Close agreement between theory and experiment allows for the accurate extraction of the photothermal absorption coefficient.
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42.82.Et Waveguides, couplers, and arrays
84.40.-x Radiowave and microwave (including millimeter wave) technology

Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric

Wangyang Fu, Zhi Xu, Kaihui Liu, Wenlong Wang, Xuedong Bai, and Enge Wang

Appl. Phys. Lett. 93, 213107 (2008); http://dx.doi.org/10.1063/1.3037219 (3 pages) | Cited 1 time

Online Publication Date: 26 November 2008

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In this letter, amorphous Bi1.5Zn1.0Nb1.5O7 films with large permittivity ( ∼ 70) are prepared as the gate dielectric for ZnO nanowire field-effect transistors by using low-temperature ( ∼ 100 °C) pulsed laser deposition. The transistors exhibit a low operation gate voltage (<3 V), a high carrier mobility ( ∼ 42 cm2/V s), and a steep subthreshold swing up to 240 mV/decade. These results combined with near-room-temperature processing technique suggest that the nanowire transistor with Bi1.5Zn1.0Nb1.5O7 dielectric is a promising candidate for high-performance flexible electronics.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
73.61.Ga II-VI semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Localized heating in nanoscale Pt constrictions measured using blackbody radiation emission

Daniel R. Ward, Naomi J. Halas, and Douglas Natelson

Appl. Phys. Lett. 93, 213108 (2008); http://dx.doi.org/10.1063/1.3039060 (3 pages) | Cited 8 times

Online Publication Date: 26 November 2008

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Using thermal emission microscopy, we investigate heating in Pt nanowires before and during electromigration. The wires are observed to reach temperatures in excess of 1000 K. This is beyond the thermal decomposition threshold for many organic molecules of interest for single molecule measurements with electromigrated nanogaps. Blackbody spectra of the hot Pt wires are measured and found to agree well with finite element modeling simulations of the electrical and thermal transport.
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73.22.-f Electronic structure of nanoscale materials and related systems
66.30.Qa Electromigration

Surface plasmon excitation of Au and Ag in scanning probe energy loss spectroscopy

A. Pulisciano, S. J. Park, and R. E. Palmer

Appl. Phys. Lett. 93, 213109 (2008); http://dx.doi.org/10.1063/1.3006435 (3 pages) | Cited 9 times

Online Publication Date: 26 November 2008

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We explore the incident energy dependence of the electronic excitation spectra of Au and Ag films in scanning probe energy loss spectroscopy (SPELS) and also high resolution electron energy loss spectroscopy. We show that the spectra obtained in SPELS depend strongly on the incident electron beam energy. In the case of Au, interband transitions mask the surface plasmon unless the field emission voltage is reduced to ∼ 100 V, whereas there is a clear surface plasmon peak above 300 V for Ag.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.20.Uv Electron energy loss spectroscopy
79.70.+q Field emission, ionization, evaporation, and desorption
68.55.-a Thin film structure and morphology
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