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24 Nov 2008

Volume 93, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 93, 214101 (2008); http://dx.doi.org/10.1063/1.3025819 (3 pages)

Brian Abbey, Garth J. Williams, Mark A. Pfeifer, Jesse N. Clark, Corey T. Putkunz, Angela Torrance, Ian McNulty, T. M. Levin, Andrew G. Peele, and Keith A Nugent
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Solution-processed poly(3-hexylthiophene) vertical organic transistor

Sheng-Han Li, Zheng Xu, Guanwen Yang, Liping Ma, and Yang Yang

Appl. Phys. Lett. 93, 213301 (2008); http://dx.doi.org/10.1063/1.3030990 (3 pages) | Cited 6 times

Online Publication Date: 25 November 2008

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The fabrication and operation of a solution-processed vertical organic transistor are now demonstrated. The vertical structure provides a large cross section and a short channel length to counter the inherent limitations of the organic materials. The operation of a vertical organic transistor relies on a transition metal oxide layer, V2O5, to lower the carrier injection barrier at the organic/metal interface. The effect of the oxide thickness was examined to verify the role of transition metal oxide in device operation. By studying the device performance at different temperatures and in solvent environments, an operating mechanism that occurs via an ion drift and doping process was proposed. The drift direction of the dissolved Li+ ion can be controlled by altering the gate voltage bias in order to change the carrier injection barrier.
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85.30.Tv Field effect devices
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Dynamic bias stress current instability caused by charge trapping and detrapping in pentacene thin film transistors

T. Miyadera, T. Minari, S. D. Wang, and K. Tsukagoshi

Appl. Phys. Lett. 93, 213302 (2008); http://dx.doi.org/10.1063/1.3037213 (3 pages) | Cited 4 times

Online Publication Date: 26 November 2008

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The current instability in pentacene organic thin film transistors (OTFTs) under dynamic bias stress was investigated. Current instability is strongly influenced by pulse duty ratio and pulse on-period and off-period voltages, but is independent of pulse frequency. A stable on-current without current instability was achieved by controlling the pulse duty ratio and pulse voltage. On the basis of the experimental results, a reversible transition model of dynamic charge trapping and detrapping in pentacene OTFTs is proposed, and trapping and detrapping time constants were estimated.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
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Solution-processed carbon electrodes for organic field-effect transistors

Hiroshi Wada and Takehiko Mori

Appl. Phys. Lett. 93, 213303 (2008); http://dx.doi.org/10.1063/1.3037226 (3 pages) | Cited 15 times

Online Publication Date: 26 November 2008

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Bottom-contact organic transistors with carbon-paste electrodes are fabricated by means of the surface selective deposition technique, where a carbon-paste solution is deposited on the region in which the self-assembled monolayers are removed by ultraviolet light irradiation. The resulting bottom-contact pentacene transistor realizes high performance of 1.0 cm2 V−1 s−1. The present method is applied to solution-processed polythiophene transistors as well as n-channel materials.
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85.30.Tv Field effect devices
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Metal patterning using maskless vacuum evaporation process based on selective deposition of photochromic diarylethene

Rie Takagi, Kyoko Masui, Shinichiro Nakamura, and Tsuyoshi Tsujioka

Appl. Phys. Lett. 93, 213304 (2008); http://dx.doi.org/10.1063/1.3028650 (3 pages) | Cited 13 times

Online Publication Date: 26 November 2008

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We developed an electrode/wiring patterning method that does not employ evaporation shadow masks; this method is based on selective metal deposition of photochromic diarylethene (DAE). In the selective Mg deposition based on the photoisomerization of DAE, Mg vapor atoms are deposited only on colored DAE film obtained upon UV irradiation, but not on uncolored film. We demonstrated fine metal Mg patterning with a minimum width of 3 μm and the preparation of a patterned cathode. The selective metal deposition method has significant potential for preparing fine electrodes/wiring for various organic electronic devices.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Hp Processes caused by visible and UV light
82.30.Qt Isomerization and rearrangement
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Qn Polymers; organic compounds
85.60.Jb Light-emitting devices
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