APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Dec 2008

Volume 93, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 221101 (2008); http://dx.doi.org/10.1063/1.3036234 (3 pages)

Soon Moon Jeong, Na Young Ha, Mu Guen Chee, Fumito Araoka, Ken Ishikawa, Hideo Takezoe, Suzushi Nishimura, and Goro Suzaki
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Ultrathin AlN/GaN heterostructure field-effect transistors with deposition of Si atoms on AlN barrier surface

Norio Onojima, Nobumitsu Hirose, Takashi Mimura, and Toshiaki Matsui

Appl. Phys. Lett. 93, 223501 (2008); http://dx.doi.org/10.1063/1.3036007 (3 pages) | Cited 2 times

Online Publication Date: 1 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We deposited Si atoms on the AlN barrier surface of an ultrathin AlN/GaN heterostructure field-effect transistor (HFET). This induced a remarkable change in the electrical properties of the two-dimensional electron gas. A 2-nm-thick Si layer reduced the sheet resistance of an AlN/GaN HFET (AlN barrier, 2 nm) from 60 356 to 388 Ω/sq. The effect on the Ohmic contact was also significant: the presence of an undermost layer of Si atoms under Ohmic contacts produced a low specific contact resistance of 1.7×10–6 Ω cm2. A 50-nm-gate AlN/GaN HFET with a Si layer exhibited excellent device characteristics with a current-gain cutoff frequency of 106 GHz.
Show PACS
85.30.Tv Field effect devices

High optimization process for increasing the attenuation properties of acoustic metamaterials by means of the creation of defects

V. Romero-García, J. V. Sánchez-Pérez, L. M. García-Raffi, J. M. Herrero, S. García-Nieto, and X. Blasco

Appl. Phys. Lett. 93, 223502 (2008); http://dx.doi.org/10.1063/1.3040317 (3 pages)

Online Publication Date: 1 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An improvement in the attenuation capabilities of acoustic metamaterials by means of the creation of defects is considered here as a multiobjective optimization problem. From this point of view, it is possible to define the optimum strategy in the creation of defects to achieve an important increase in acoustic attenuation in a predetermined range of frequencies. A powerful multiobjective optimization algorithm called evMOGA has been used to solve this problem. The study has been restricted to the case of a two-dimensional sonic crystal formed by rigid cylinders in air, the defects being vacancies in the initial structure.
Show PACS
43.20.Fn Scattering of acoustic waves
43.20.El Reflection, refraction, diffraction of acoustic waves
43.20.Hq Velocity and attenuation of acoustic waves
43.40.Sk Inverse problems in structural acoustics and vibration

Temperature dependence of the current conduction mechanisms in LaAlO3 thin films

Ingram Yin-Ku Chang and Joseph Ya-Min Lee

Appl. Phys. Lett. 93, 223503 (2008); http://dx.doi.org/10.1063/1.3039074 (3 pages) | Cited 5 times

Online Publication Date: 3 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Metal-oxide-semiconductor capacitors and transistors with LaAlO3 dielectric films were fabricated and the current conduction mechanisms were studied. The LaAlO3 films remained amorphous with postdeposition annealing up to 1000 °C. The leakage current density was 8.3×10−5 A/cm2 at −1 V. The low leakage current was attributed to the high barrier height of Al/LaAlO3 interface. The Al/LaAlO3 barrier height and the effective electronic mass calculated from Schottky emission and Fowler–Nordheim tunneling were 1.12 eV and 0.27m0, respectively. The dominant conduction mechanism in the temperature range of 300 K<T<420 K was space-charge-limited current, and the trapping depth was determined to be 0.36±0.1 eV.
Show PACS
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.61.Ng Insulators
73.40.Ns Metal-nonmetal contacts
72.20.Ht High-field and nonlinear effects
84.32.Tt Capacitors

Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

Jone F. Chen, Shiang-Yu Chen, Kuo-Ming Wu, and C. M. Liu

Appl. Phys. Lett. 93, 223504 (2008); http://dx.doi.org/10.1063/1.3040693 (3 pages) | Cited 1 time

Online Publication Date: 3 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Channel length (Lch) dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor (DEMOS) transistors stressed under high drain voltage and high gate voltage is investigated. On-resistance degradation is reduced in longer Lch device, however, threshold voltage shift (ΔVT) is greater. Charge pumping data reveal that electron trapping in gate oxide above channel region is responsible for ΔVT. Simulation results show that longer Lch device exhibits enhanced vertical electric field (Ey), i.e., enhanced hot-electron injection, in channel region due to the alleviation of Kirk effect. Results presented in this letter reveal that enhanced ΔVT driven by enhanced channel Ey may become a serious reliability concern in DEMOS transistors with longer Lch.
Show PACS
85.30.Tv Field effect devices

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

Jung Won Seo, Jae-Woo Park, Keong Su Lim, Ji-Hwan Yang, and Sang Jung Kang

Appl. Phys. Lett. 93, 223505 (2008); http://dx.doi.org/10.1063/1.3041643 (3 pages) | Cited 52 times

Online Publication Date: 3 December 2008

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81% (including the substrate) in the visible region and an excellent switching behavior under 3 V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10 years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.
Show PACS
84.30.Sk Pulse and digital circuits
84.32.Tt Capacitors

On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt

Weihua Guan, Ming Liu, Shibing Long, Qi Liu, and Wei Wang

Appl. Phys. Lett. 93, 223506 (2008); http://dx.doi.org/10.1063/1.3039079 (3 pages) | Cited 41 times

Online Publication Date: 5 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu/ZrO2:Cu/Pt memory devices conforms to a filament formation and annihilation mechanism. Temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state (ON state). Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive bridge. On this basis, we propose that the set process (switching from OFF state to ON state) and the reset process (switching from ON to OFF state) stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.
Show PACS
84.30.Sk Pulse and digital circuits

From photovoltaics to medical imaging: Applications of thin-film CdTe in x-ray detection

J. Kang, E. I. Parsai, D. Albin, V. G. Karpov, and Diana Shvydka

Appl. Phys. Lett. 93, 223507 (2008); http://dx.doi.org/10.1063/1.3042212 (3 pages) | Cited 6 times

Online Publication Date: 5 December 2008

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Recent developments in photovoltaics created a commercially viable technology of large area uniform thin-film structures, potentially extendable to the field of medical imaging, where the capability of producing large area x-ray detectors is essential for the successful diagnosis and treatment of cancer. We propose a large area thin-film CdTe structure suitable for radiation detection and discuss its main characteristics under x-ray beams used in radiation therapy. While based on the same principle, the details of its operations are very dissimilar from that of photovoltaics.
Show PACS
73.50.Pz Photoconduction and photovoltaic effects
85.30.-z Semiconductor devices
87.57.-s Medical imaging
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close