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1 Dec 2008

Volume 93, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 221101 (2008); http://dx.doi.org/10.1063/1.3036234 (3 pages)

Soon Moon Jeong, Na Young Ha, Mu Guen Chee, Fumito Araoka, Ken Ishikawa, Hideo Takezoe, Suzushi Nishimura, and Goro Suzaki
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Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction

Chao-Cheng Lin, Ting-Chang Chang, Chun-Hao Tu, Wei-Ren Chen, Chih-Wei Hu, Simon M. Sze, Tseung-Yuen Tseng, Sheng-Chi Chen, and Jian-Yang Lin

Appl. Phys. Lett. 93, 222101 (2008); http://dx.doi.org/10.1063/1.3039065 (3 pages) | Cited 9 times

Online Publication Date: 1 December 2008

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An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiOx. Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
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73.63.Bd Nanocrystalline materials
81.16.Pr Micro- and nano-oxidation
81.16.Be Chemical synthesis methods
61.72.Cc Kinetics of defect formation and annealing
73.40.Ns Metal-nonmetal contacts

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Wan Shen, Regina Dittmann, Uwe Breuer, and Rainer Waser

Appl. Phys. Lett. 93, 222102 (2008); http://dx.doi.org/10.1063/1.3039809 (3 pages) | Cited 44 times

Online Publication Date: 1 December 2008

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We compared the resistive switching performance of barium strontium titanate (BST) thin films with tungsten (W) and platinum (Pt) top electrodes, respectively. The yield, endurance, and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop in the resistance for both high and low resistance states, the devices with W top electrode can be switched for 104 times without any obvious degradation. We attribute the improved switching performance to a reversible oxidation and reduction in a WOx layer at the W-BST interface, which was detected by time-of-flight secondary-ion-mass spectroscopy measurements.
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73.61.Le Other inorganic semiconductors
72.60.+g Mixed conductivity and conductivity transitions
73.40.Ns Metal-nonmetal contacts

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

Satoru Miyamoto, Katsuhiko Nishiguchi, Yukinori Ono, Kohei M. Itoh, and Akira Fujiwara

Appl. Phys. Lett. 93, 222103 (2008); http://dx.doi.org/10.1063/1.3028649 (3 pages) | Cited 6 times

Online Publication Date: 1 December 2008

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Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.
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73.63.Kv Quantum dots
85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
68.65.Hb Quantum dots (patterned in quantum wells)

The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors

Byung-Il Hwang, Kyung Park, Ha-Suk Chun, Chee-Hong An, Hyoungsub Kim, and Hoo-Jeong Lee

Appl. Phys. Lett. 93, 222104 (2008); http://dx.doi.org/10.1063/1.3031726 (3 pages) | Cited 15 times

Online Publication Date: 3 December 2008

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This study examined a fundamental aspect of ZnO-based thin film transistors (TFTs): the connection between the deposition conditions and the microstructure of ZnO films, and the electrical performance of the TFTs. We characterized the microstructure of ZnO films deposited under various rf powers by using high resolution transmission electron microscopy and x-ray diffraction. In further investigating the effects of the microstructure on the device performance, we experimentally demonstrated that the electrical mobility of the devices was coupled to the grain size of the ZnO films in an exponential function.
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85.30.Tv Field effect devices

Ab initio description and visualization of charge transport in durene crystals

Frank Ortmann, Karsten Hannewald, and Friedhelm Bechstedt

Appl. Phys. Lett. 93, 222105 (2008); http://dx.doi.org/10.1063/1.3033830 (3 pages) | Cited 6 times

Online Publication Date: 3 December 2008

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We study the charge transport through crystalline durene which exhibits large hole mobilities. By means of ab initio calculations, we determine the temperature-dependent polaron bandwidth and the mobility tensor of the charge carriers. The origin of the bandlike mobility curves is discussed, and the strong anisotropy of the mobility is analyzed in detail. We put a special focus on the relationship between crystal packing geometry, molecular wave function overlap, and charge transport properties. The results include a visualization of the transport channels in durene which can be regarded as a prototypical herringbone-stacked crystal.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Le Polymers; organic compounds (including organic semiconductors)
71.15.-m Methods of electronic structure calculations
71.38.-k Polarons and electron-phonon interactions

Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor

Nadeemullah A. Mahadik, Syed B. Qadri, and Mulpuri V. Rao

Appl. Phys. Lett. 93, 222106 (2008); http://dx.doi.org/10.1063/1.3040315 (3 pages) | Cited 5 times

Online Publication Date: 3 December 2008

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Localized strain in AlGaN/GaN high electron mobility transistor (HEMT) device structures was studied by high resolution x-ray diffraction and rocking curve measurements, and the results were compared with the corresponding channel sheet resistance measurements. The map of in-plane tensile strain on the HEMT wafer showed a near one-to-one correspondence with the electrical resistivity. The in-plane strain variation in the range of (2.295–3.539)×10−4 resulted in a corresponding sheet resistance variation between 345 and 411 Ω/◻.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, S. Ishida, T. Taniyama, K. Hirakawa, Y. Arakawa, and T. Machida

Appl. Phys. Lett. 93, 222107 (2008); http://dx.doi.org/10.1063/1.3042098 (3 pages) | Cited 3 times

Online Publication Date: 3 December 2008

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We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.75.-c Magnetic properties of nanostructures
75.47.Pq Other materials
73.63.Kv Quantum dots

Theoretical consideration of step-flow and two-dimensional nucleation modes in homoepitaxial growth of 4H-SiC on (0001) vicinal surfaces under silicon-rich condition

K. Mochizuki

Appl. Phys. Lett. 93, 222108 (2008); http://dx.doi.org/10.1063/1.3043433 (3 pages) | Cited 1 time

Online Publication Date: 4 December 2008

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Reported experimental results on homoepitaxial growth of 4H-SiC on (0001) Si-face vicinal surfaces under silicon-rich conditions in a SiH4–C3H8–H2 system are quantitatively analyzed according to the surface-diffusion theory dealing with step dynamics. The surface-diffusion length of C2H2 molecules, which are the main carbon-containing chemical species reacting with silicon adatoms on the surface, is determined to be 12–36 nm at 1500 °C. According to the two-dimensional nucleation theory using these values, the maximum growth rate for step-flow growth is estimated as a function of the off-angle of 4H-SiC substrates.
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68.55.ag Semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Fx Diffusion; interface formation
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation

Quantum resistance metrology in graphene

A. J. M. Giesbers, G. Rietveld, E. Houtzager, U. Zeitler, R. Yang, K. S. Novoselov, A. K. Geim, and J. C. Maan

Appl. Phys. Lett. 93, 222109 (2008); http://dx.doi.org/10.1063/1.3043426 (3 pages) | Cited 24 times

Online Publication Date: 5 December 2008

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We performed a metrological characterization of the quantum Hall resistance in a 1 μm wide graphene Hall bar. The longitudinal resistivity in the center of the ν = ±2 quantum Hall plateaus vanishes within the measurement noise of 20 mΩ up to 2 μA. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5 μA current) equal to that in conventional semiconductors. The principal limitation of the present experiments is the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.
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73.43.-f Quantum Hall effects
06.20.-f Metrology
73.23.-b Electronic transport in mesoscopic systems

Discrete breathers in ac-driven nanoelectromechanical shuttle arrays

Jan Wiersig, Sergej Flach, and Kang-Hun Ahn

Appl. Phys. Lett. 93, 222110 (2008); http://dx.doi.org/10.1063/1.3043434 (3 pages) | Cited 5 times

Online Publication Date: 5 December 2008

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We investigate the dynamics of electrically ac-driven nanoelectromechanical shuttle arrays. The electromechanical coupling enforces long-range interactions. We find multistability regimes upon changing the voltage and frequency. We show that the instability driven by parametric amplification of sinusoidal mechanical waves leads to the creation of spatially localized mechanical oscillations, discrete breathers, and subsequently to an abrupt change in the electrical transport properties. In particular, we find current rectification, which is induced by the excitation of discrete breathers. This is of potential interest and use for nanomechanical sensor application.
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73.23.-b Electronic transport in mesoscopic systems
73.63.-b Electronic transport in nanoscale materials and structures

Alkanethiol-based single-molecule transistors

Chun-Lan Ma, Diu Nghiem, and Yu-Chang Chen

Appl. Phys. Lett. 93, 222111 (2008); http://dx.doi.org/10.1063/1.3043438 (3 pages) | Cited 5 times

Online Publication Date: 5 December 2008

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We have investigated the transport properties of alkanethiol molecules in the two-terminal and three-terminal junctions by using first-principles approaches. We observe that states around the Fermi levels are introduced in the amino-substituted butanethiol junction. It leads to a sharp increase in the current, which is credited to the resonant tunneling. The current-voltage characteristics suggest that the amino-substituted butanethiol molecular junction may be a promising candidate for field-effect transistors.
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85.30.Tv Field effect devices
71.15.-m Methods of electronic structure calculations
71.20.Rv Polymers and organic compounds

Ultraviolet radiation sensing in composite oxide semiconductor films

M. Bahoura, A. Lee, R. Mundle, R. B. Konda, G. Kogo, O. Bamiduro, O. Yasar, W. Moore, K. Zhang, F. Williams, and A. K. Pradhan

Appl. Phys. Lett. 93, 222112 (2008); http://dx.doi.org/10.1063/1.3043455 (3 pages) | Cited 2 times

Online Publication Date: 5 December 2008

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We report on the ultraviolet (UV)-radiation sensing of pulsed-laser deposited In2O3:SnO2:ZnO films grown on glass substrates. The films demonstrate sharp increase ( ∼ 0.35 Ω) in electrical resistance on UV illumination. The resistance of the films shows strong spectral (in the vicinity of 325 nm) and power dependence. This is explained due to the presence of defects located at lattice disorders that generate levels within the semiconductor band gap and originate depletion region around them when charged. This reduces the effective conduction region, increasing the effective resistance. These results show new possibilities for the low-cost high performance UV radiation sensors for biosafety.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.ag Semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Fg Pulsed laser ablation deposition
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