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1 Dec 2008

Volume 93, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 221101 (2008); http://dx.doi.org/10.1063/1.3036234 (3 pages)

Soon Moon Jeong, Na Young Ha, Mu Guen Chee, Fumito Araoka, Ken Ishikawa, Hideo Takezoe, Suzushi Nishimura, and Goro Suzaki
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Dielectrophoresis of ionized gas microbubbles: Dipole reversal due to diffusive double-layer polarization

Zachary R. Gagnon and Hsueh-Chia Chang

Appl. Phys. Lett. 93, 224101 (2008); http://dx.doi.org/10.1063/1.3002283 (3 pages) | Cited 2 times

Online Publication Date: 2 December 2008

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Gas bubbles generated by electrolysis reactions are shown to exhibit anomalous induced ac dipoles and dielectrophoretic behavior that cannot be described by classical Maxwell–Wagner theory. Normal charging and screening of conducting ionized gas in the gas-phase double layer are shown to render the bubble insulating at low ac field frequencies to affect negative dielectrophoresis. This screening effect couples with dielectric polarization at high frequencies to produce no crossover frequency for small bubbles and two crossover frequencies for bubbles larger than a critical size of 40 μm. A double-layer theory accurately captures the two crossover frequencies and critical bubble size behavior.
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82.45.Hk Electrolysis
77.22.Ej Polarization and depolarization
47.55.D- Drops and bubbles

Power generation and shunt damping performance of a single crystal lead magnesium niobate-lead zirconate titanate unimorph: Analysis and experiment

A. Erturk, O. Bilgen, and D. J. Inman

Appl. Phys. Lett. 93, 224102 (2008); http://dx.doi.org/10.1063/1.3040011 (3 pages) | Cited 10 times

Online Publication Date: 2 December 2008

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This letter investigates the power generation and shunt damping performance of the single crystal piezoelectric ceramic lead magnesium niobate–lead zirconate titanate (PMN-PZT) analytically and experimentally. PMN-PZT is a recently developed interface for energy harvesting and shunt damping with its large piezoelectric constant (−2252 pm/V) and coupling coefficient (0.95) for the transverse piezoelectric mode. A unimorph PMN-PZT cantilever with an aluminum substrate is tested under base excitation and its electromechanical response is predicted with a coupled distributed parameter model. The power generation performance of the device is 138 μW/(g2 cm3) at 1744 Hz, causing 84% tip vibration attenuation due to the resistive shunt damping effect.
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77.65.Bn Piezoelectric and electrostrictive constants
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.07.Mp Transducers

Stand-off detection of trace explosives via resonant infrared photothermal imaging

R. Furstenberg, C. A. Kendziora, J. Stepnowski, S. V. Stepnowski, M. Rake, M. R. Papantonakis, V. Nguyen, G. K. Hubler, and R. A. McGill

Appl. Phys. Lett. 93, 224103 (2008); http://dx.doi.org/10.1063/1.3027461 (3 pages) | Cited 22 times

Online Publication Date: 4 December 2008

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We describe a technique for rapid stand-off detection of trace explosives and other analytes of interest. An infrared (IR) laser is directed to a surface of interest, which is viewed using a thermal imager. Resonant absorption by the analyte at specific IR wavelengths selectively heats the analyte, providing a thermal contrast with the substrate. The concept is demonstrated using trinitrotoluene and cyclotrimethylenetrinitramine on transparent, absorbing, and reflecting substrates. Trace explosives have been detected from particles as small as 10 μm.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.33.Vx Reactions in flames, combustion, and explosions
85.60.Gz Photodetectors (including infrared and CCD detectors)

Thickness dependent transport properties and percolative phase separation in polycrystalline manganite thin films

Y. H. Chen and T. B. Wu

Appl. Phys. Lett. 93, 224104 (2008); http://dx.doi.org/10.1063/1.3037202 (3 pages) | Cited 4 times

Online Publication Date: 4 December 2008

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The effects of film thicknesses on the electronic transport and percolative metal-insulator (M-I) transition of La1−xSrxMnO3 (LSMO) films have been investigated. The conductivity increases with the layer thickness; this is regarded as the relaxation of tensile strains and reduction in grain boundaries (fewer scattering centers) as well as shorter hopping distances, which suppresses the Jahn–Teller distortion or enhances the double exchange. It is also observed by conductive atomic force microscopy (CAFM) that metallic and insulating regions coexist in LSMO films. The domains undergo a percolative M-I transition, and TM-I observed by CAFM is consistent with the result of four-point probe measurements.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.Ng Insulators
73.50.Dn Low-field transport and mobility; piezoresistance
68.55.jd Thickness
71.30.+h Metal-insulator transitions and other electronic transitions
75.50.Dd Nonmetallic ferromagnetic materials
64.75.St Phase separation and segregation in thin films

Dynamic condensation blocking in cryogenic refueling

V. V. Osipov and C. B. Muratov

Appl. Phys. Lett. 93, 224105 (2008); http://dx.doi.org/10.1063/1.3025674 (3 pages) | Cited 1 time

Online Publication Date: 5 December 2008

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We demonstrate that a negative feedback between vapor pressure and condensation rate may be established in two-phase systems during vapor compression with rates of practical importance. As a result, dynamic condensation blocking occurs. The effect is studied numerically in the case of filling a no-vent insulated tank by liquid hydrogen. It is shown that the filling dynamics quite sensitively depends on the filling rate, and for sufficiently fast filling rates consist of a fast stage dominated by gas compression and a slow stage governed by heat conduction in the liquid.
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68.03.Fg Evaporation and condensation of liquids
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
44.10.+i Heat conduction

Nonvolatile memory based on sol-gel ZnO thin-film transistors with Ag nanoparticles embedded in the ZnO/gate insulator interface

Dipti Gupta, Manish Anand, Seong-Wan Ryu, Yang-Kyu Choi, and Seunghyup Yoo

Appl. Phys. Lett. 93, 224106 (2008); http://dx.doi.org/10.1063/1.3041777 (3 pages) | Cited 23 times

Online Publication Date: 5 December 2008

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A nonvolatile memory is demonstrated using a solution-processed sol-gel ZnO thin-film transistor (TFT) in which Ag nanoparticles are embedded as charge storage nodes at the insulator-ZnO interface. Its TFT transfer characteristics exhibit a large clockwise hysteresis that is proportional to the gate bias sweep range. Measurement of the threshold voltage shift versus the pulse width of gate bias reveals that the device can be programed or erased at a time scale of as short as 10−4 s. Retention of the initial memory window is measured to be 27% after 105 s and projected to last until 107 s.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
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