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1 Dec 2008

Volume 93, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 221101 (2008); http://dx.doi.org/10.1063/1.3036234 (3 pages)

Soon Moon Jeong, Na Young Ha, Mu Guen Chee, Fumito Araoka, Ken Ishikawa, Hideo Takezoe, Suzushi Nishimura, and Goro Suzaki
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Stress gradients induced in Cu films by capping layers

Conal E. Murray, Paul R. Besser, Christian Witt, and Jean L. Jordan-Sweet

Appl. Phys. Lett. 93, 221901 (2008); http://dx.doi.org/10.1063/1.3035853 (3 pages) | Cited 4 times

Online Publication Date: 1 December 2008

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The presence of capping layers deposited on copper films can create strain gradients through the Cu film thickness. Grazing-incidence and conventional x-ray diffraction measurements determined the in-plane stress of the Cu films as a function of depth. Cu films possessing a SiCxNyHz capping layer exhibited greater tensile stress near the cap than in the bulk, whereas Cu films possessing a CoWP film did not show a gradient. The constraint imposed by the SiCxNyHz cap during the cooling process from the cap deposition temperature (350 °C) leads to an increase in the in-plane stress of 180 MPa from the bulk value.
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61.05.cp X-ray diffraction
68.60.Bs Mechanical and acoustical properties
81.65.Rv Passivation

Effect of C incorporation on relaxation of SiGe/Si

H.-W. Kim, S. Choi, S. Hong, H. K. Jung, G.-D. Lee, E. Yoon, and C. S. Kim

Appl. Phys. Lett. 93, 221902 (2008); http://dx.doi.org/10.1063/1.3040308 (3 pages) | Cited 2 times

Online Publication Date: 1 December 2008

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Thin fully strained Si1−xGex/Si1−x−yGexCy/Si1−xGex heterostructures (x = 0.2), with controlled C incorporation sites, were grown on Si substrates using ultrahigh vacuum chemical vapor deposition. Following the growth, layers were relaxed using rapid thermal annealing at 1000 °C for 30 s, and high degrees of relaxation of 65% and 59% were achieved with and without interstitial C, respectively. We show that the difference in cross hatch density and step height between two samples, which correspond to different misfit dislocation pileup behaviors, suggests controllability of SiGe relaxation via variation in C incorporation sites in the SiGeC layer.
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61.72.uf Ge and Si
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.jj Interstitials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Shrinkage and expansion mechanisms of SiO2 elliptical membrane nanopores

Jae Won Shin, Jeong Yong Lee, Do Hyun Oh, Tae Whan Kim, and Woon Jo Cho

Appl. Phys. Lett. 93, 221903 (2008); http://dx.doi.org/10.1063/1.3027062 (3 pages)

Online Publication Date: 1 December 2008

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20 nm SiO2 elliptical membrane nanopores with various thicknesses were directly formed in situ by using a focused electron beam with transmission electron microscopy (TEM). The shrinkage and the expansion behaviors of the SiO2 ellipse nanopores with different thicknesses were attributed to variations in their geometries, in particular their curvatures. The geometric mechanisms of elliptical nanopores with various thicknesses fabricated utilizing a SiO2 membrane with a thickness gradient by using an electron beam irradiation are described on the basis of TEM images, which depend on the electron beam irradiation time.
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68.37.Lp Transmission electron microscopy (TEM)
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Molecular dynamics simulations of buckling-induced plasticity

Julien Durinck, Christophe Coupeau, Jérôme Colin, and Jean Grilhé

Appl. Phys. Lett. 93, 221904 (2008); http://dx.doi.org/10.1063/1.3033552 (3 pages) | Cited 4 times

Online Publication Date: 1 December 2008

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Molecular dynamics simulations of thin film buckling demonstrate that high compressive stresses are localized in the straight-sided wrinkle leading to the nucleation of dislocations, which are mobile and plastically release a large amount of the strain. As a consequence, the maximum deflection determined in the framework of elasticity theory is found to be overestimated. Finally, the resulting plastic deformation has been estimated and included in the expression of the deflection.
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81.40.Lm Deformation, plasticity, and creep
62.20.mq Buckling
62.20.fq Plasticity and superplasticity
68.60.Bs Mechanical and acoustical properties

Fabrication of three dimensional porous silicon distributed Bragg reflectors

D. Mangaiyarkarasi, M. B. H. Breese, and Y. S. Ow

Appl. Phys. Lett. 93, 221905 (2008); http://dx.doi.org/10.1063/1.3040304 (3 pages) | Cited 4 times

Online Publication Date: 2 December 2008

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Three-dimensional distributed Bragg reflectors, which reflect all incident wavelengths, have been fabricated with micrometer dimensions in porous silicon, resulting in white reflective surfaces when viewed over a wide angular range. Large area arrays of several mm2 containing many individual micrometer-size pixellated reflectors that can be tuned to reflect a narrow or wide range of wavelengths are designed to appear either as constant or changing reflective images to the naked eye. This work opens avenues in controlling the reflection of light in all directions for applications in wide-angle displays, broadband reflective surfaces for resonant white light emission from semiconductor nanocrystals, and three-dimensional microcavities.
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42.82.-m Integrated optics
42.82.Cr Fabrication techniques; lithography, pattern transfer

Layered high-gain lens antennas via discrete optical transformation

Wei Xiang Jiang, Tie Jun Cui, Hui Feng Ma, Xin Mi Yang, and Qiang Cheng

Appl. Phys. Lett. 93, 221906 (2008); http://dx.doi.org/10.1063/1.3040307 (3 pages) | Cited 15 times

Online Publication Date: 2 December 2008

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In reality, the optical-transformation media with complicated and continuous electromagnetic parameters are difficult to realize. In this work, we propose a discrete embedded optical transformation from which a layered high-gain lens antenna is designed. All layers of the lens antenna are composed of homogeneous and uniaxially anisotropic metamaterials, which are simple and realizable. When the layered lens is embedded in a horn antenna, the lens antenna provides a high-directivity radiation beam. We also use the discrete optical transformation to design a multibeam high-gain antenna.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.25.Gy Edge and boundary effects; reflection and refraction
42.79.Dj Gratings

Crystallization-induced stress in thin phase change films of different thicknesses

Qiang Guo, Minghua Li, Yi Li, Luping Shi, Tow Chong Chong, Johannes A. Kalb, and Carl V. Thompson

Appl. Phys. Lett. 93, 221907 (2008); http://dx.doi.org/10.1063/1.3040314 (3 pages) | Cited 8 times

Online Publication Date: 2 December 2008

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We have studied crystallization-induced stress in phase change films (Ge2Sb2Te5) as a function of thickness and with and without a capping layer, by measuring the deflection of microcantilevers. The stress is found to increase with decreasing film thickness. A thin dielectric capping layer leads to a further increase in stress compared to uncapped films. This observation can be explained by the suppression of stress relaxation in the phase change film in the presence of a capping layer. High stress will affect device performance as the size of phase change memory cells decreases.
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68.60.Bs Mechanical and acoustical properties
68.55.ag Semiconductors
81.40.Lm Deformation, plasticity, and creep
62.20.fg Shape-memory effect; yield stress; superelasticity
68.55.jd Thickness
64.70.kg Semiconductors

Efficient energy transfer for Ce to Nd in Nd/Ce codoped yttrium aluminum garnet

Jian Xin Meng, Jin Qing Li, Zhao Pu Shi, and Kok Wai Cheah

Appl. Phys. Lett. 93, 221908 (2008); http://dx.doi.org/10.1063/1.3035849 (3 pages) | Cited 13 times

Online Publication Date: 3 December 2008

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A two order of enhancement in near-infrared emission from Nd3+ in Ce3+/Nd3+ codoped yttrium aluminum garnet (YAG) matrix is obtained. This is due to efficient absorption by the allowed 4f-5d transition of Ce3+ ions then transfer to Nd3+ ions via a well matched energy level. This is among the most efficient near-infrared emission from Nd3+ ions strongly sensitized by exciting with an allowed transition in an inorganic matrix. This means that a new class of material, YAG:Ce,Nd, was produced and it potentially can be an efficient near-infrared phosphor that could be easily excited by a GaN light emitting diode, producing a new type of near-infrared emitter.
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78.55.Hx Other solid inorganic materials

Controllable light transmission through cascaded metal films perforated with periodic hole arrays

Meng-Dong He, Ling-Ling Wang, Jian-Qiang Liu, Xiang Zhai, Qing Wan, Xiaoshuang Chen, and B. S. Zou

Appl. Phys. Lett. 93, 221909 (2008); http://dx.doi.org/10.1063/1.3040301 (3 pages) | Cited 10 times

Online Publication Date: 3 December 2008

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The transmission of linearly polarized plane wave through cascaded metal films perforated with periodic hole arrays is investigated by using the three-dimensional finite-difference time-domain method. The results show that the transmission spectra can be controlled by changing the longitudinal interval G and/or the lateral displacements Lx and Ly, which are parallel and perpendicular to the polarization direction of the incident light, respectively. The variation in longitudinal interval G results in a redshift or blueshift of the transmission peak due to the coupling of the localized surface plasmon (LSP) modes on two metal layers. The lateral displacement Lx leads to the splitting of the transmission peak, originating from the variation in the coupling manner of LSP modes, while the lateral displacement Ly suppresses the transmission peak.
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78.66.Bz Metals and metallic alloys
42.70.Qs Photonic bandgap materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
68.55.jd Thickness

Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to thermal treatment

J. M. Yuk, J. Y. Lee, Y. S. No, T. W. Kim, and W. K. Choi

Appl. Phys. Lett. 93, 221910 (2008); http://dx.doi.org/10.1063/1.3040320 (3 pages) | Cited 4 times

Online Publication Date: 3 December 2008

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Transmission electron microscopy (TEM), high-resolution TEM, and x-ray energy dispersive spectroscopy results showed that Zn metallic nanocrystals and ZnSiO3 insulating nanocrytals embedded in a SiO2 matrix were created from the ZnO thin films deposited on n-Si (001) substrates due to rapid thermal annealing. The formed Zn metallic nanocrystals were transformed into monoclinic ZnSiO3 insulating nanocrystals with increasing number of Zn atoms resulting from an increase in the annealing time up to 10 min. The transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO3 nanocrystals in a SiO2 matrix due to rapid thermal annealing are described on the basis of the experimental results.
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71.30.+h Metal-insulator transitions and other electronic transitions
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
61.72.Cc Kinetics of defect formation and annealing

Entropic origins of stability in silicon interstitial clusters

Sumeet S. Kapur and Talid Sinno

Appl. Phys. Lett. 93, 221911 (2008); http://dx.doi.org/10.1063/1.3042096 (3 pages) | Cited 2 times

Online Publication Date: 5 December 2008

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The role of entropy in the thermodynamic properties of small interstitial clusters in crystalline silicon is investigated using an empirical potential. It is shown that both vibrational and configurational entropies are potentially important in setting the properties of small silicon interstitial clusters and, in particular, contribute to the formation of “magic” sizes that exhibit special stability, which have been inferred by experimental measurements of dopant diffusion. The results suggest that a competition between formation energy and entropy of small clusters could be linked to the selection process between various self-interstitial precipitate morphologies observed in ion-implanted crystalline silicon.
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61.72.jj Interstitials
65.40.gd Entropy

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

J. P. Liu, K. Li, S. M. Pandey, F. L. Benistant, A. See, M. S. Zhou, L. C. Hsia, Ruud Schampers, and Dmitri O. Klenov

Appl. Phys. Lett. 93, 221912 (2008); http://dx.doi.org/10.1063/1.3040323 (3 pages) | Cited 11 times

Online Publication Date: 5 December 2008

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We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.
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85.30.Tv Field effect devices
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
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