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8 Dec 2008

Volume 93, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 93, 231101 (2008); http://dx.doi.org/10.1063/1.3040686 (3 pages)

Mads Brøkner Christiansen, Anders Kristensen, Sanshui Xiao, and Niels Asger Mortensen
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Photonic integration in k-space: Enhancing the performance of photonic crystal dye lasers

Mads Brøkner Christiansen, Anders Kristensen, Sanshui Xiao, and Niels Asger Mortensen

Appl. Phys. Lett. 93, 231101 (2008); http://dx.doi.org/10.1063/1.3040686 (3 pages) | Cited 10 times

Online Publication Date: 8 December 2008

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We demonstrate how two optical functionalities can be implemented in a single photonic crystal structure by carefully engineering dispersion in several different bands at several different wavelengths. We use the concept for optically pumped dye doped hybrid polymer band edge lasers and show how a rectangular photonic crystal lattice imprinted into the surface can provide both feedback for in-plane band edge lasing and couple pump light into the device plane, thus increasing the emitted intensity and lowering the lasing threshold by more than an order of magnitude.
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42.55.Mv Dye lasers
42.55.Tv Photonic crystal lasers and coherent effects
42.82.-m Integrated optics
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Terahertz generation in multiple laser-induced air plasmas

Meng-Ku Chen, Jae Hun Kim, Chia-En Yang, Stuart Shizhuo Yin, Rongqing Hui, and Paul Ruffin

Appl. Phys. Lett. 93, 231102 (2008); http://dx.doi.org/10.1063/1.3046122 (3 pages) | Cited 7 times

Online Publication Date: 9 December 2008

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An investigation of the terahertz wave generation in multiple laser-induced air plasmas is presented. First, it is demonstrated that the intensity of the terahertz wave increases as the number of air plasmas increases. Second, the physical mechanism of this enhancement effect of the terahertz generation is studied by quantitatively measuring the intensity of the generated terahertz wave as a function of phase difference between adjacent air plasmas. It is found out that the superposition is the main mechanism to cause this enhancement. Thus, the results obtained in this paper not only provide a technique to generate stronger terahertz wave but also enable a better understanding of the mechanism of the terahertz generation in air plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
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Direct measurement of the complex refractive index in the extreme ultraviolet spectral region using diffraction from a nanosphere array

B. Mills, C. F. Chau, E. T. F. Rogers, J. Grant-Jacob, S. L. Stebbings, M. Praeger, A. M. de Paula, C. A. Froud, R. T. Chapman, T. J. Butcher, J. J. Baumberg, W. S. Brocklesby, and J. G. Frey

Appl. Phys. Lett. 93, 231103 (2008); http://dx.doi.org/10.1063/1.3033549 (3 pages) | Cited 1 time

Online Publication Date: 9 December 2008

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Using extreme ultraviolet (XUV) radiation from a high harmonic source, we observe diffraction from a single-layer self-assembled hexagonal array of 196±1.2 nm diameter polystyrene spheres. The Mie solution is used to predict the correct form factor for a single sphere and hence model the intensities of the observed diffraction peaks for the first three orders. By measuring the diffraction intensities in this way, we demonstrate a technique for obtaining the complex refractive index of a material at multiple wavelengths in the XUV from a single measurement. We present experimental results for polystyrene in the range of 25–30 nm.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Me Organic compounds and polymers
61.41.+e Polymers, elastomers, and plastics
78.66.Qn Polymers; organic compounds
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Large cavity quantum cascade lasers with InP interstacks

A. Bismuto, T. Gresch, A. Bächle, and Jérôme Faist

Appl. Phys. Lett. 93, 231104 (2008); http://dx.doi.org/10.1063/1.3042213 (3 pages) | Cited 8 times

Online Publication Date: 9 December 2008

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Multicore quantum cascade lasers with large cavities show low optical losses, high saturation intensity, and low beam divergence. We present a four active core laser based on InGaAs–AlInAs material system emitting at 10.5 μm. To improve thermal conductance, InP interstacks were used to separate active regions. Selective lateral etching of the active regions was used to reduce optical losses. Peak powers up to 4.6 W, average powers up to 310 mW, and wall-plug efficiencies up to 4.6% were measured at 300 K. A far field with full width at half maximum of 18.7° and 49.8° in the lateral and in the growth direction, respectively, was observed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
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Plasmonic photonic crystal with a complete band gap for surface plasmon polariton waves

Liang Feng, Ming-Hui Lu, Vitaliy Lomakin, and Yeshaiahu Fainman

Appl. Phys. Lett. 93, 231105 (2008); http://dx.doi.org/10.1063/1.3043581 (3 pages) | Cited 8 times

Online Publication Date: 9 December 2008

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A dielectric plasmonic photonic crystal for manipulating surface plasmon polariton (SPP) fields has been designed, fabricated, and tested. The band structure of SPP fields inside the plasmonic photonic crystal has been calculated using the plane wave expansion method and validated by full wave numerical simulations. The fabricated device was characterized using our far-field SPP imaging technique. The transmittance of incident SPP waves is about 5% at 1520 nm (a designed band gap frequency), confirming the designed band structure. The results show, both experimentally and theoretically, a complete two-dimensional band gap for in-plane SPP waves. The SPP fields at frequencies within this specified 0.14ωa/2πc-wide band gap frequency range are forbidden to propagate through the plasmonic photonic crystal.
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42.70.Qs Photonic bandgap materials
77.22.Ch Permittivity (dielectric function)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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Generation of polychromatic radially and azimuthally polarized beams

T. Grosjean, M. Suarez, and A. Sabac

Appl. Phys. Lett. 93, 231106 (2008); http://dx.doi.org/10.1063/1.3040056 (3 pages) | Cited 10 times

Online Publication Date: 9 December 2008

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We propose a fiber-based system aimed at generating radially and azimuthally polarized beams over spectral ranges of several tens of nanometers. The device is either adaptable to polychromatic sources such as supercontinuum fiber lasers or to tunable ones (optical parametric oscillator, laser diode, etc.). A preliminary version of the system has been engineered to work in the visible portion of the spectrum. The concept proposed here can be adapted to the infrared or blue-UV spectral domains. As a starting application, polychromatic Bessel beams of the first order have been produced.
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42.55.Wd Fiber lasers
42.72.Bj Visible and ultraviolet sources
42.72.Ai Infrared sources
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.-k Nonlinear optics
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Enhanced four-wave mixing by atomic coherence in a Pr3+:Y2SiO5 crystal

Hai-Hua Wang, Dun-Mao Du, Yun-Fei Fan, Ai-Jun Li, Lei Wang, Xiao-Gang Wei, Zhi-Hui Kang, Yun Jiang, Jin-Hui Wu, and Jin-Yue Gao

Appl. Phys. Lett. 93, 231107 (2008); http://dx.doi.org/10.1063/1.3043683 (3 pages) | Cited 8 times

Online Publication Date: 9 December 2008

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We experimentally demonstrate an enhanced four-wave mixing (FWM) based on atomic coherence in a Pr3+:Y2SiO5 crystal. By employing coherent population return and fractional stimulated Raman adiabatic passage to prepare maximum atomic coherence in the crystal, an efficient FWM signal can be generated. By measuring the generated FWM signal, the time-dependent atomic coherence is monitored. Such an enhanced FWM in solids may have practical applications in nonlinear optics and laser spectroscopy.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
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Experimental demonstration of a μ = −1 metamaterial lens for magnetic resonance imaging

Manuel J. Freire, Ricardo Marques, and Lukas Jelinek

Appl. Phys. Lett. 93, 231108 (2008); http://dx.doi.org/10.1063/1.3043725 (3 pages) | Cited 30 times

Online Publication Date: 9 December 2008

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In this work a μ = −1 metamaterial (MM) lens for magnetic resonance imaging (MRI) is demonstrated. MRI uses surface coils to detect the radio frequency (rf) energy absorbed and emitted by the nuclear spins in the imaged object. The proposed MM lens manipulates the rf field detected by these surface coils so that the coil sensitivity and spatial localization are substantially improved. Beyond this specific application, we feel that the reported results are the experimental confirmation of a new concept for the manipulation of rf field in MRI, which paves the way to many other interesting applications.
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07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.70.-a Optical materials
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Directional light extraction from thin-film resonant cavity light-emitting diodes with a photonic crystal

K. Bergenek, Ch. Wiesmann, H. Zull, R. Wirth, P. Sundgren, N. Linder, K. Streubel, and T. F. Krauss

Appl. Phys. Lett. 93, 231109 (2008); http://dx.doi.org/10.1063/1.3046130 (3 pages) | Cited 6 times

Online Publication Date: 10 December 2008

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We report directional light extraction from AlGaInP thin-film resonant cavity light emitting diodes (RCLEDs) with shallow photonic crystals (PhCs). Diffraction of guided modes into the light extraction cone enhances the light extraction by a factor of 2.6 compared to unstructured RCLEDs, where the farfields still show higher directionality than Lambertian emitters. The external quantum efficiency is 15.5% to air and 26% with encapsulation, respectively. The PhC-RCLEDs are also more stable to a temperature induced wavelength shift than unstructured RCLEDs.
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85.60.Jb Light-emitting devices
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Wave propagation and tunneling through periodic structures

I. V. Konoplev, P. MacInnes, A. W. Cross, A. D. R. Phelps, L. Fisher, and K. Ronald

Appl. Phys. Lett. 93, 231110 (2008); http://dx.doi.org/10.1063/1.3033826 (3 pages) | Cited 9 times

Online Publication Date: 10 December 2008

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The phenomenon of tunneling manifests itself in nearly every field of physics. The ability to distinguish a wave tunneling through a barrier from one propagating is important for a number of applications. Here we explore the properties of the wave traveling through the band gap created by a lattice, either as a consequence of tunneling through the barrier or due to the presence of a pass band inside the gap. To observe the pass band for studying tunneling and propagating waves simultaneously, a localized lattice defect was introduced. The differences between the two phenomena are highlighted via waves’ dispersion characteristics.
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42.70.Qs Photonic bandgap materials
03.65.Xp Tunneling, traversal time, quantum Zeno dynamics
73.40.Gk Tunneling
42.25.Fx Diffraction and scattering
41.20.Jb Electromagnetic wave propagation; radiowave propagation
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Enhanced and partially polarized output of a light-emitting diode with its InGaN/GaN quantum well coupled with surface plasmons on a metal grating

Kun-Ching Shen, Cheng-Yen Chen, Hung-Lu Chen, Chi-Feng Huang, Yean-Woei Kiang, C. C. Yang, and Ying-Jay Yang

Appl. Phys. Lett. 93, 231111 (2008); http://dx.doi.org/10.1063/1.3046099 (3 pages) | Cited 11 times

Online Publication Date: 11 December 2008

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The enhanced and partially polarized output of a green light-emitting diode (LED), in which its InGaN/GaN quantum well (QW) couples with surface plasmons (SPs) on a surface Ag grating structure, is demonstrated. Compared with a LED sample without (flat) Ag coating, the total output intensity of an LED of SP-QW coupling can be enhanced by ∼ 59% ( ∼ 200)% when the grating period and groove depth are 500 and 30 nm, respectively. Also, a bottom-emission polarization ratio of 1.7 can be obtained under the condition of 15 nm in groove depth.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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Temperature distribution and modification mechanism inside glass with heat accumulation during 250 kHz irradiation of femtosecond laser pulses

Masaaki Sakakura, Masahiro Shimizu, Yasuhiko Shimotsuma, Kiyotaka Miura, and Kazuyuki Hirao

Appl. Phys. Lett. 93, 231112 (2008); http://dx.doi.org/10.1063/1.3046101 (3 pages) | Cited 28 times

Online Publication Date: 11 December 2008

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Heat accumulation by high repetition rate femtosecond laser irradiation inside glass generates a much larger modification than that by a single pulse. In this study, we determined the temperature distribution due to heat accumulation and the characteristic temperature for heat modification inside a soda lime glass by analyzing the relationship between the radius of modification and glass temperature. The validity of the analysis was confirmed by reproducing the modification due to two-beam irradiation. The determined characteristic temperature suggested that the temperature distribution and the spatial dependence of the stress relaxation are important in the mechanism of heat modification.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Jj Elasticity and anelasticity, stress-strain relations
61.43.Fs Glasses
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Restoration of high spatial frequency at the image formed by stimulated Brillouin scattering with a prepulse

Du Hyun Beak, Jin Woo Yoon, Jae Sung Shin, and Hong Jin Kong

Appl. Phys. Lett. 93, 231113 (2008); http://dx.doi.org/10.1063/1.3042101 (3 pages) | Cited 1 time

Online Publication Date: 11 December 2008

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We have found experimentally that it is possible to restore the high spatial frequency of optical images by using stimulated Brillouin scattering (SBS) with a prepulse. The Stokes wave usually has to lose the high spatial frequency because of the necessary energy to generate the acoustic grating. However, this problem has been resolved by using a prepulse method. We have achieved an amplitude increase of ∼ 41% compared to the normal SBS scheme at a spatial frequency of ∼ 0.027 mm−1. This method is easy to apply to a system using the optical image by the SBS process.
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42.30.Wb Image reconstruction; tomography
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.30.Va Image forming and processing
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Depth-resolved holographic optical coherence imaging using a high-sensitivity photorefractive polymer device

M. Salvador, J. Prauzner, S. Köber, K. Meerholz, K. Jeong, and D. D. Nolte

Appl. Phys. Lett. 93, 231114 (2008); http://dx.doi.org/10.1063/1.3044464 (3 pages) | Cited 9 times

Online Publication Date: 12 December 2008

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We present coherence-gated holographic imaging using a highly sensitive photorefractive (PR) polymer composite as the recording medium. Due to the high sensitivity of the composite holographic recording at intensities as low as 5 mW/cm2 allowed for a frame exposure time of only 500 ms. Motivated by regenerative medical applications, we demonstrate optical depth sectioning of a polymer foam for use as a cell culture matrix. An axial resolution of 18 μm and a transverse resolution of 30 μm up to a depth of 600 μm was obtained using an off-axis recording geometry.
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42.40.Ht Hologram recording and readout methods
42.40.Eq Holographic optical elements; holographic gratings
42.30.Wb Image reconstruction; tomography
87.63.L- Visual imaging
42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
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Enhanced contrast coherent anti-Stokes Raman scattering microscopy using annular phase masks

Michael R. Beversluis and Stephan J. Stranick

Appl. Phys. Lett. 93, 231115 (2008); http://dx.doi.org/10.1063/1.3046719 (3 pages) | Cited 5 times

Online Publication Date: 12 December 2008

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We have experimentally demonstrated enhanced image contrast of sample fine structure in a coherent anti-Stokes Raman scattering (CARS) microscope using liquid crystal spatial light modulators as programmable Toraldo-style pupil phase masks. We demonstrated through modeling, implementation, and verification of the focal intensity and phase distributions of the excitation beams the trade-offs between improved image contrast and CARS signal levels.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
07.60.Pb Conventional optical microscopes
42.79.Hp Optical processors, correlators, and modulators
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Elliptically polarized terahertz emission in the forward direction of a femtosecond laser filament in air

Yanping Chen, Claude Marceau, Weiwei Liu, Zhen-Dong Sun, Yizhu Zhang, Francis Théberge, Marc Châteauneuf, Jacques Dubois, and See Leang Chin

Appl. Phys. Lett. 93, 231116 (2008); http://dx.doi.org/10.1063/1.3046781 (3 pages) | Cited 12 times

Online Publication Date: 12 December 2008

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Elliptically polarized terahertz emission from a femtosecond laser filament in air in the forward direction was discovered by using a wire grid polarizer and electro-optic sampling technique. The generation mechanism could be through four-wave optical rectification or second-order optical rectification inside the filament zone where the inversion symmetry of air is broken.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
51.70.+f Optical and dielectric properties
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Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy

Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi, and Y. Fujiwara

Appl. Phys. Lett. 93, 231117 (2008); http://dx.doi.org/10.1063/1.3046784 (3 pages) | Cited 3 times

Online Publication Date: 12 December 2008

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Carrier capturing in GaInP/Er,O-codoped GaAs (GaAs:Er,O)/GaInP laser diodes (LDs) was investigated by means of the threshold current density (Jth) of laser emission. The Er-doped LDs showed laser emission of the GaAs band edge at room temperature, and its Jth increases with the Er flow rate during the growth. In the dependence of Jth on reciprocal cavity length, the effective gain factor of the LDs decreased by the codoping of Er and O. These results reveal that ultrafast capturing of injected carriers at an Er-related trap level is accomplished even in the stimulated emission region of GaAs. The fast capturing process allowed us to observe both the spontaneous intra-4f-shell emission due to Er3+ ions at 1.54 μm and the stimulated emission at the GaAs band edge ( ∼ 840 nm) in the Er-doped LDs.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.uj III-V and II-VI semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.47.J- Ultrafast spectroscopy (<1 psec)
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Underwater microdischarge in arranged microbubbles produced by electrolysis in electrolyte solution using fabric-type electrode

Osamu Sakai, Masaru Kimura, Tatsuru Shirafuji, and Kunihide Tachibana

Appl. Phys. Lett. 93, 231501 (2008); http://dx.doi.org/10.1063/1.3006348 (3 pages) | Cited 9 times

Online Publication Date: 8 December 2008

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Pulsed microdischarge was generated in microbubbles produced by electrolysis in an electrolyte solution without external gas feed by using a fabric-type electrode. The electrode structure not only allowed low-voltage ignition of the atmospheric-pressure discharge in hydrogen or oxygen containing microbubbles but also worked effectively in producing and holding the bubbles on its surface. The generation of reactive species was verified by optical emissions from the produced microplasmas, and their transport into the solution was monitored by the change in hydrogen concentration.
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52.50.-b Plasma production and heating
52.80.-s Electric discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
82.45.Fk Electrodes
82.45.Gj Electrolytes
82.45.Hk Electrolysis
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Positive ion polymerization in hydrogen diluted silane plasmas

S. Nunomura and M. Kondo

Appl. Phys. Lett. 93, 231502 (2008); http://dx.doi.org/10.1063/1.3042263 (3 pages) | Cited 8 times

Online Publication Date: 9 December 2008

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Mass spectra of positive ions (cations) and neutrals have been measured in hydrogen diluted silane plasmas at gas pressures of 0.1–10 Torr. The mass spectrum of ions changes with the pressure, while that of neutrals maintains a similar shape. The dominant ion species varies from a hydrogen ion group at ≲0.5 Torr to a monosilicon hydride ion group at ≈ 0.5–1 Torr and polysilicon hydride ion groups at ≳1 Torr, which is determined from ionization channels and consecutive ion-molecule reactions. The ion bombardment is suppressed with the pressure, from several tens of eV at ≲1 Torr to a few eV at ≳7 Torr.
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82.35.-x Polymers: properties; reactions; polymerization
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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Observation of collisionless heating of low energy electrons in low pressure inductively coupled argon plasmas

Min-Hyong Lee, Hyo-Chang Lee, and Chin-Wook Chung

Appl. Phys. Lett. 93, 231503 (2008); http://dx.doi.org/10.1063/1.3042264 (3 pages) | Cited 9 times

Online Publication Date: 11 December 2008

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Collisionless heating of low energy electrons was observed in low pressure argon rf-biased inductively coupled plasmas (ICPs) by measurement of the electron energy distribution function (EEDF). When only capacitive power (bias) was supplied, the EEDF in the discharge was a bi-Maxwellian distribution with two electron groups. It was found that the low energy electrons were heated up significantly even with a little inductive power (<20 W) even when the discharge was in E mode. Due to the low gas pressure and low temperature of low energy electrons (close to the energy of the Ramsauer minimum), the collisional heating of low energy electrons appears to be negligible. Therefore, this effective heating of the low energy electrons showed a direct experimental evidence of the collisionless heating by inductive field. The significant heating of low energy electrons in E mode indicates that collisionless heating in the skin layer is an important electron heating mechanism of low pressure ICP even when the discharge is in E mode.
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52.50.-b Plasma production and heating
52.80.Pi High-frequency and RF discharges
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Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films

D. D’Angelo, L. Romano, I. Crupi, E. Carria, V. Privitera, and M. G. Grimaldi

Appl. Phys. Lett. 93, 231901 (2008); http://dx.doi.org/10.1063/1.3036899 (3 pages) | Cited 3 times

Online Publication Date: 8 December 2008

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Solid phase epitaxial regrowth (SPER) of p-doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p- and n-type doping. We introduced a charged defect, whose energy level is independent of the dopant species.
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81.15.Np Solid phase epitaxy; growth from solid phases
61.72.sd Impurity concentration
71.55.Cn Elemental semiconductors
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Analysis on the mechanism of photoluminescence quenching in π-conjugated polymers in photo-oxidation process with broadband transient grating

Ying-hui Wang, Ya-jing Peng, Yue-qi Mo, Yan-qiang Yang, and Xian-xu Zheng

Appl. Phys. Lett. 93, 231902 (2008); http://dx.doi.org/10.1063/1.3045953 (3 pages) | Cited 1 time

Online Publication Date: 9 December 2008

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Photoinduced oxidation process of poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] is probed by using broadband transient grating technique. The results suggest that the damage of bonds in the side and main chains leads to the line shape variation and efficiency decreasing of luminescence in photoluminescence quenching, and their temporal evolution and damage rates are found to vary with molecular energy states.
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78.55.Kz Solid organic materials
81.65.Mq Oxidation
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Infrared analysis of hole properties of Mg-doped p-type InN films

Masayuki Fujiwara, Yoshihiro Ishitani, Xinqiang Wang, Song-Bek Che, and Akihiko Yoshikawa

Appl. Phys. Lett. 93, 231903 (2008); http://dx.doi.org/10.1063/1.3006052 (3 pages) | Cited 15 times

Online Publication Date: 9 December 2008

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Mg-doped InN films grown by plasma-assisted molecular beam epitaxy were characterized by infrared reflectance. Signatures of p-type conductivity in the spectra were obtained in the same doping density range where the existence of net acceptors was found by electrolyte capacitance-voltage measurements. Numerical spectrum analysis, which takes into account the large broadening factor of the normal mode energies of longitudinal optical phonon–plasmon coupling yielded high hole densities in the range of (0.1–1.2)×1019 cm−3 and optical mobilities in the range of 25–70 cm2/V s.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition
63.20.kk Phonon interactions with other quasiparticles
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Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach

F. Patella, F. Arciprete, E. Placidi, M. Fanfoni, A. Balzarotti, A. Vinattieri, L. Cavigli, M. Abbarchi, M. Gurioli, L. Lunghi, and A. Gerardino

Appl. Phys. Lett. 93, 231904 (2008); http://dx.doi.org/10.1063/1.3040327 (3 pages) | Cited 2 times

Online Publication Date: 10 December 2008

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We report on single dot microphotoluminescence (μPL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO2 mask deposited on GaAs(001). By comparing atomic force microscopy measurements with μPL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.
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68.47.Fg Semiconductor surfaces
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
78.47.jd Time resolved luminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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Terahertz electromagnetic interference shielding using single-walled carbon nanotube flexible films

M. A. Seo, J. H. Yim, Y. H. Ahn, F. Rotermund, D. S. Kim, S. Lee, and H. Lim

Appl. Phys. Lett. 93, 231905 (2008); http://dx.doi.org/10.1063/1.3046126 (3 pages) | Cited 12 times

Online Publication Date: 10 December 2008

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We performed time-domain terahertz spectroscopy on thin layers of single-walled carbon nanotubes (SWCNTs) coated on flexible films. The SWCNT layers demonstrate good shielding of electromagnetic waves in the terahertz range while maintaining good transparency for visible light. The shielding efficiency can be engineered through the thickness control and/or chemical treatment of SWCNT layers. The frequency-dependent dielectric constants of SWCNT layers are in good agreement with the Drude free-electron model.
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78.67.Ch Nanotubes
81.07.De Nanotubes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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