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8 Dec 2008

Volume 93, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 93, 231101 (2008); http://dx.doi.org/10.1063/1.3040686 (3 pages)

Mads Brøkner Christiansen, Anders Kristensen, Sanshui Xiao, and Niels Asger Mortensen
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The effect of aluminum oxide incorporation on the material and electrical properties of hafnium oxide on Ge

Monica Sawkar-Mathur, Ya-Chuan Perng, Jun Lu, Hans-Olof Blom, John Bargar, and Jane P. Chang

Appl. Phys. Lett. 93, 233501 (2008); http://dx.doi.org/10.1063/1.3040311 (3 pages) | Cited 5 times

Online Publication Date: 9 December 2008

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Hafnium aluminate thin films were synthesized by atomic layer deposition (ALD) to assess the effect of aluminum oxide incorporation on the dielectric/Ge interfacial properties. In these HfxAlyOz thin films, the Hf to Al cation ratio was effectively controlled by changing the ratio of hafnium oxide to aluminum oxide ALD cycles, while their short range order was changed upon increasing aluminum oxide incorporation, as observed by extended x-ray absorption fine structure analysis. The incorporation of aluminum oxide was shown to improve the electrical characteristics of hafnium oxide/Ge devices, including lower interface state densities and leakage current densities.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
81.05.Cy Elemental semiconductors
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Field emission from graphene based composite thin films

Goki Eda, H. Emrah Unalan, Nalin Rupesinghe, Gehan A. J. Amaratunga, and Manish Chhowalla

Appl. Phys. Lett. 93, 233502 (2008); http://dx.doi.org/10.1063/1.3028339 (3 pages) | Cited 73 times

Online Publication Date: 9 December 2008

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Field emission from graphene is challenging because the existing deposition methods lead to sheets that lay flat on the substrate surface, which limits the field enhancement. Here we describe a simple and general solution based method for the deposition of field emitting graphene/polymer composite thin films. The graphene sheets are oriented at some angles with respect to the substrate surface leading to field emission at low threshold fields ( ∼ 4 V μm−1). Our method provides a route for the deposition of graphene based thin film field emitter on different substrates, opening up avenues for a variety of applications.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
68.55.am Polymers and organics
61.46.-w Structure of nanoscale materials
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Subwavelength imaging of acoustic waves by a canalization mechanism in a two-dimensional phononic crystal

Zhaojian He, Feiyan Cai, Yiqun Ding, and Zhengyou Liu

Appl. Phys. Lett. 93, 233503 (2008); http://dx.doi.org/10.1063/1.3043684 (3 pages) | Cited 18 times

Online Publication Date: 9 December 2008

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In this letter, the subwavelength imaging of acoustic waves is reported based on a mechanism that the evanescent modes of a source are canalized by the Bloch modes of a two-dimensional phononic crystal that served as the lens. The phononic crystal was designed to have a thickness that meets the condition of Fabry–Pérot resonance in order to enhance wave transmission and hence to improve imaging performance. Numerical simulations demonstrated that for a point acoustic source an image as small as 0.16λ can be formed.
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43.20.+g General linear acoustics
43.58.+z Acoustical measurements and instrumentation
43.90.+v Other topics in acoustics (restricted to new topics in section 43)
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Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators

Hengky Chandrahalim, Sunil A. Bhave, Ronald Polcawich, Jeff Pulskamp, Daniel Judy, Roger Kaul, and Madan Dubey

Appl. Phys. Lett. 93, 233504 (2008); http://dx.doi.org/10.1063/1.3046717 (3 pages) | Cited 14 times

Online Publication Date: 10 December 2008

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This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept point (IIP3) of +43.7 dBm versus +23.3 dBm]. In contrast, the PZT-only resonator demonstrated much wider frequency tuning range (5.1% versus 0.2%).
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
84.30.Vn Filters
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Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation

W. S. Lau, Peizhen Yang, V. Ho, B. K. Lim, S. Y. Siah, and L. Chan

Appl. Phys. Lett. 93, 233505 (2008); http://dx.doi.org/10.1063/1.3037205 (3 pages) | Cited 1 time

Online Publication Date: 10 December 2008

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The on-current of p-channel transistors fabricated on (100) Si substrate can be easily increased by switching from ⟨110⟩ to ⟨100⟩ channel orientation because of faster hole transport. In this paper, we pointed out that there is also a reduction in the gate-to-source/drain overlap, resulting in an increase in the effective channel length for p-channel transistors. Our experimental observation can be explained by a reduction in boron lateral ion channeling due to this switch.
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85.30.Tv Field effect devices
72.20.Ee Mobility edges; hopping transport
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.47.Fg Semiconductor surfaces
81.05.Cy Elemental semiconductors
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Gunn oscillations in a self-switching nanodiode

K. Y. Xu, G. Wang, and A. M. Song

Appl. Phys. Lett. 93, 233506 (2008); http://dx.doi.org/10.1063/1.3042268 (3 pages) | Cited 6 times

Online Publication Date: 10 December 2008

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The feasibility of Gunn oscillations in a planar nanoscale unipolar diode or a self-switching device (SSD) is analyzed using Monte Carlo simulations. The asymmetric nanochannel that the SSD is based on is shown to induce charge domains much more receptively when compared to a reference symmetric nanochannel. The oscillation frequency reaches 130 GHz. Potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
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85.35.-p Nanoelectronic devices
85.30.De Semiconductor-device characterization, design, and modeling
84.30.Ng Oscillators, pulse generators, and function generators
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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Vertically aligned liquid crystals on a γ-Al2O3 alignment film using ion-beam irradiation

Hong-Gyu Park, Young-Hwan Kim, Byeong-Yun Oh, Won-Kyu Lee, Byoung-Yong Kim, Dae-Shik Seo, and Jeong-Yeon Hwang

Appl. Phys. Lett. 93, 233507 (2008); http://dx.doi.org/10.1063/1.3046728 (3 pages) | Cited 13 times

Online Publication Date: 12 December 2008

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Using ion-beam (IB) irradiation, liquid crystals (LCs) were vertically aligned (VA) on a γ-Al2O3 alignment film. Atomic-layer deposition was used to orient the LCs on high-quality γ-Al2O3 alignment films. The LC molecule orientation indicates the vertical direction of the atomic-layer-deposited γ-Al2O3 alignment films. X-ray photoelectron spectroscopy showed that IB irradiation changed the chemical structure, shifting the Al–O binding energy and altering the Al–O bonding intensity. The low-voltage transmittance characteristics of the VA LC displays on the γ-Al2O3 alignment films were also measured, showing reduced voltage and power requirements.
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71.20.Ps Other inorganic compounds
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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Enhanced field emission from ZnO nanotetrapods on a carbon nanofiber buffered Ag film by screen printing

Chi Li, Kai Hou, Xiaxi Yang, Ke Qu, Wei Lei, Xiaobing Zhang, Baoping Wang, and X. W. Sun

Appl. Phys. Lett. 93, 233508 (2008); http://dx.doi.org/10.1063/1.3046779 (3 pages) | Cited 7 times

Online Publication Date: 12 December 2008

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Field emission properties of screen-printed ZnO nanotetrapods on a carbon nanofiber buffered Ag electrode were studied. The turn-on electric field (at a current of 0.1 μA/cm2) and maximum emission current are 0.6 V/μm and 2.8 mA/cm2 (at a field of 2.2 V/μm), which were significantly improved compared to the control device made of ZnO nanotetrapods on Ag directly without a carbon nanofiber buffer. The improved field emission is due to the better contact (both mechanical and electrical) formed with a carbon nanofiber buffer.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.07.Bc Nanocrystalline materials
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