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8 Dec 2008

Volume 93, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 231101 (2008); http://dx.doi.org/10.1063/1.3040686 (3 pages)

Mads Brøkner Christiansen, Anders Kristensen, Sanshui Xiao, and Niels Asger Mortensen
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Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Sung-jin Mun, Jeong-M. Choi, Kwang H. Lee, Kimoon Lee, and Seongil Im

Appl. Phys. Lett. 93, 233301 (2008); http://dx.doi.org/10.1063/1.3041634 (3 pages) | Cited 11 times

Online Publication Date: 8 December 2008

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We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm-thin pentacene grown on the SiO2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on SiO2.
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73.61.Ph Polymers; organic compounds
72.80.Le Polymers; organic compounds (including organic semiconductors)
85.30.Tv Field effect devices
68.55.J- Morphology of films
77.55.-g Dielectric thin films
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A flexible organic pentacene nonvolatile memory based on high-κ dielectric layers

Ming-Feng Chang, Po-Tsung Lee, S. P. McAlister, and Albert Chin

Appl. Phys. Lett. 93, 233302 (2008); http://dx.doi.org/10.1063/1.3046115 (3 pages) | Cited 15 times

Online Publication Date: 10 December 2008

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We report a pentacene thin film transistor nonvolatile memory fabricated on a flexible polyimide substrate. This device shows a low program/erase voltage of 12 V, a speed of 1/100 ms, an initial memory window of 2.4 V, and a 0.78 V memory window after 48 h. This has been achieved by using a high-κ dielectric as charge trapping, blocking, and tunneling gate insulator layers.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
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Multilayered solid-state organic laser for simultaneous multiwavelength oscillations

K. Yamashita, A. Arimatsu, N. Takeuchi, M. Takayama, K. Oe, and H. Yanagi

Appl. Phys. Lett. 93, 233303 (2008); http://dx.doi.org/10.1063/1.3046720 (3 pages) | Cited 7 times

Online Publication Date: 10 December 2008

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This paper describes an organic dye-doped polymeric laser with a multilayered structure of active waveguides. Using the technique of photonanoimprint lithography, organic active-waveguide layers with distributed-feedback cavities and a polymeric intermediate cladding layer were stacked on a silica substrate. Under optical pumping, lasing oscillations at 427 and 636 nm, which correspond to the Bragg reflection wavelengths in the respective active waveguides, were simultaneously observed. The fabrication scheme presented here is expected to be a promising technology for the development of compact multicolor laser sources.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Wc Optical coatings
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High performance ambient processed inverted polymer solar cells through interfacial modification with a fullerene self-assembled monolayer

Steven K. Hau, Hin-Lap Yip, Hong Ma, and Alex K.-Y. Jen

Appl. Phys. Lett. 93, 233304 (2008); http://dx.doi.org/10.1063/1.3028094 (3 pages) | Cited 77 times

Online Publication Date: 11 December 2008

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The performance of inverted bulk-heterojunction solar cells with zinc oxide nanoparticles as the electron selective contact is compared to those modified with a fullerene self-assembled monolayer (C60-SAM). The devices modified with a C60-SAM show very significant improvement in conversion efficiencies compared to unmodified devices leading to efficiencies as high as 4.9%. This is due to enhanced electronic coupling of the inorganic/organic interface from the C60-SAM leading to improved fill factor and photocurrent. Furthermore, devices fabricated in an inert environment were compared to those fabricated in ambient showing comparable device performance.
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84.60.Jt Photoelectric conversion
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
72.40.+w Photoconduction and photovoltaic effects
81.16.Dn Self-assembly
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Dz II-VI semiconductors
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Organic heterostructure device with nonvolatile memory behavior using electrically doped layers

Frank Lindner, Karsten Walzer, and Karl Leo

Appl. Phys. Lett. 93, 233305 (2008); http://dx.doi.org/10.1063/1.3046723 (3 pages) | Cited 6 times

Online Publication Date: 12 December 2008

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Recently, several memory devices based on organic semiconductors were reported. In most cases, single organic layers were employed, and the switching mechanisms were not fully understood. Here, we report on a novel device structure based on electrically doped organic heterostructures showing highly stable memory behavior. The organic layers are embedded between a bottom indium tin oxide and a top metal contact and form a quantum well-like structure. The device shows a hysteresis in the current-voltage characteristics and well-defined switching behavior. We achieved reproducible bistable electrical switching and stable memory phenomena in these organic multilayer heterostructure devices. The two states were retained for up to several days without noticeable decrease of their on/off ratio. Further, it was found that the ratio of the on/off current depends on the writing voltage, allowing the use as multistate memory.
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84.30.Sk Pulse and digital circuits
85.30.De Semiconductor-device characterization, design, and modeling
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Reduced hole mobility due to the presence of excited states in poly-(3-hexylthiophene)

J. Y. Song, N. Stingelin, W. P. Gillin, and T. Kreouzis

Appl. Phys. Lett. 93, 233306 (2008); http://dx.doi.org/10.1063/1.3049129 (3 pages) | Cited 8 times

Online Publication Date: 12 December 2008

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The hole mobility in poly-(3-hexylthiophene) samples is measured by the dark injection transient technique in both hole only and ambipolar devices. By applying a small offset bias prior to the voltage step, electronic excited states are generated in the ambipolar but not in the hole only devices. The presence of excited states reduces the room temperature hole mobility (typically 5×10−5 cm2 V−1 s−1) by as much as 15% compared to that measured without offset, in contrast to the hole only devices where no significant mobility reduction is seen at the same, or indeed higher, current densities. We attribute the lower mobility to interactions between the charge carriers and the long lived triplet states and to an effective reduction in the number of transport sites available.
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73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
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