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Appl. Phys. Lett. 93, 243119 (2008); http://dx.doi.org/10.1063/1.3028015 (3 pages)

Self-doping effects in epitaxially grown graphene

D. A. Siegel1,2, S. Y. Zhou1,2, F. El Gabaly3, A. V. Fedorov4, A. K. Schmid3, and A. Lanzara1,2

1Department of Physics, University of California, Berkeley, California 94720, USA
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

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(Received 19 September 2008; accepted 27 October 2008; published online 18 December 2008)

Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

© 2008 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 61.72.up

    Other materials

  • 81.05.U-

    Carbon/carbon-based materials

  • 68.35.bt

    Other materials

  • 68.37.Nq

    Low energy electron microscopy (LEEM)

  • 79.60.Jv

    Interfaces; heterostructures; nanostructures

  • 73.22.-f

    Electronic structure of nanoscale materials and related systems

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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