Epitaxial growth of GaN films grown on single crystal Fe substrates

Okamoto, K.; Inoue, S.; Matsuki, N.; Kim, T.-W.; Ohta, J.; Oshima, M.; Fujioka, H.; Ishii, A.

doi:doi:10.1063/1.3056117

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Growth of biepitaxial zinc oxide thin films on silicon (100) using yttria-stabilized zirconia buffer layer

In this work, an approach for integrating zinc oxide thin films with Si(100) substrates using an epitaxial tetragonal yttria-stabilized zirconia buffer layer is reported. Selected area electron diffraction measurements revealed the following epitaxial relationship: [110]YSZ∥[100]Si and (001)YSZ∥(001)Si. X-ray diffraction studies demonstrated that subsequent growth of the zinc oxide thin film on the yttria-stabilized zirconia buffer layer occurred with the following epitaxial relationship: (0002...

Viscoelastic mechanical behavior of soft microcantilever-based force sensors

Polydimethylsiloxane (PDMS) microcantilevers have been used as force sensors for studying cellular mechanics by converting their displacements to cellular mechanical forces. However, PDMS is an inherently viscoelastic material and its elastic modulus changes with loading rates and elapsed time. Therefore, the traditional approach to calculating cellular mechanical forces based on elastic mechanics can result in errors. This letter reports a more in-depth method for viscoelastic characterization...

GaN films have been grown on single crystalline Fe(110), Fe(100), and Fe(111) substrates with low-temperature AlN buffer layers by the use of pulsed laser deposition. AlN films with 30° rotated domains and polycrystalline AlN films grow on Fe(100) and Fe(111), respectively. On the other hand, AlN(0001) films grow epitaxially on Fe(110) substrates. X-ray reflectivity measurements have revealed that the heterointerface of AlN/Fe(110) is quite abrupt and that its abruptness remains unchanged, even after annealing at 700 °C. GaN epitaxial films have been grown on AlN/Fe(110) structures with an in-plane relationship of GaN[11−20]∥AlN[11−20]∥Fe[001]. The first-principles calculations have revealed that this in-plane epitaxial relationship is determined by the adsorption process of nitrogen atoms on the Fe surfaces at the initial stage of the growth.

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KEYWORDS and PACS

Keywords

adsorption, aluminium compounds, annealing, buffer layers, density functional theory, gallium compounds, III-V semiconductors, iron, nitrogen, pulsed laser deposition, reflectivity, semiconductor epitaxial layers, semiconductor growth, semiconductor heterojunctions, vapour phase epitaxial growth, wide band gap semiconductors, X-ray analysis

PACS

68.55.ag

Semiconductors
68.43.De

Statistical mechanics of adsorbates
73.40.Kp

III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.43.Mn

Adsorption kinetics
81.15.Fg

Pulsed laser ablation deposition
61.72.Cc

Kinetics of defect formation and annealing

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http://dx.doi.org/10.1063/1.3056117

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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