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29 Dec 2008

Volume 93, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 93, 261101 (2008); http://dx.doi.org/10.1063/1.3053074 (3 pages)

Takashi Fujikura, Osamu Matsuda, Dieter M. Profunser, Oliver B. Wright, Jeremy Masson, and Sylvain Ballandras
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Engineering piezoresistivity using biaxially strained silicon

Jesper Goor Pedersen, Jacob Richter, Mads Brandbyge, Erik V. Thomsen, and Ole Hansen

Appl. Phys. Lett. 93, 263501 (2008); http://dx.doi.org/10.1063/1.3059557 (3 pages)

Online Publication Date: 29 December 2008

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We calculate the shear piezocoefficient of p-type silicon with grown-in biaxial strain using a 6×6 k⋅p method. We find a significant increase in the value of the shear piezocoefficient for compressive grown-in biaxial strain, while tensile strain decreases the piezocoefficient. The dependence of the piezocoefficient on temperature and dopant density is altered qualitatively for strained silicon. In particular, we find that a vanishing temperature coefficient may result for silicon with grown-in biaxial tensile strain. These results suggest that strained silicon may be used to engineer the piezoresistivity to enhance the performance of piezoresistive stress sensors.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Cw Elemental semiconductors
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
71.15.-m Methods of electronic structure calculations

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

H. Y. Yu, S. Z. Chang, M. Aoulaiche, X. P. Wang, C. Adelmann, B. Kazer, P. Absil, A. Lauwers, and S. Biesemans

Appl. Phys. Lett. 93, 263502 (2008); http://dx.doi.org/10.1063/1.3058695 (3 pages) | Cited 4 times

Online Publication Date: 29 December 2008

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The mechanism governing threshold voltage (Vt) modulation in NiSi/SiON n-channel metal-oxide-semiconductor field-effect transistors when doping with rare-earth elements (dysprosium or Dy in this work) is studied. In addition to the widely reported interface dipole theory, this letter provides additional evidence that the bulk trapping charges (related to the unintermixed Dy2O3 layer after device fabrication) can play an important role in determining the device Vt for the above-mentioned gate stacks. It is thus suggested that a careful design of the capping layer thickness and the thermal budget for intermixing the capping layer with host dielectrics is necessary to eliminate the impact from bulk trapping charges to the device performance.
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73.30.+y Surface double layers, Schottky barriers, and work functions
77.55.-g Dielectric thin films
73.20.-r Electron states at surfaces and interfaces
85.30.-z Semiconductor devices

Broadening of the plasmon resonance due to plasmon-plasmon intermode scattering in terahertz high-electron-mobility transistors

V. V. Popov, O. V. Polischuk, W. Knap, and A. El Fatimy

Appl. Phys. Lett. 93, 263503 (2008); http://dx.doi.org/10.1063/1.3055610 (3 pages) | Cited 9 times

Online Publication Date: 30 December 2008

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We calculate the terahertz absorption spectrum of the high-electron-mobility transistor with a short gate and long ungated channel regions and show that the main contribution to the linewidth of the gated plasmon resonance can be attributed to the plasmon-plasmon intermode scattering. The results allow interpreting recent experimental results on resonant terahertz detection by InGaAs nanotransistors. The physics of the plasmon-plasmon intermode scattering is discussed and efficiency of this process is quantitatively compared to the other possible plasmon damping mechanisms.
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85.30.Tv Field effect devices
72.30.+q High-frequency effects; plasma effects
84.40.-x Radiowave and microwave (including millimeter wave) technology
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