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29 Dec 2008

Volume 93, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 93, 261101 (2008); http://dx.doi.org/10.1063/1.3053074 (3 pages)

Takashi Fujikura, Osamu Matsuda, Dieter M. Profunser, Oliver B. Wright, Jeremy Masson, and Sylvain Ballandras
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Raman spectroscopy of (K,Na)NbO3 and (K,Na)1−xLixNbO3

H. J. Trodahl, N. Klein, D. Damjanovic, N. Setter, B. Ludbrook, D. Rytz, and M. Kuball

Appl. Phys. Lett. 93, 262901 (2008); http://dx.doi.org/10.1063/1.3056658 (3 pages) | Cited 14 times

Online Publication Date: 29 December 2008

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We report Raman spectroscopy in all four phases of a (K0.5+δNa0.5−δ)NbO3 (δ ∼ 0.03) crystal and ((K0.5+δNa0.5−δ)1−xLix)NbO3 for x = 0.02  and 0.03. The phase transitions in the Li-free crystal are homogeneous and hysteretic, with no mixed-phase region between the rhombohedral and orthorhombic phases. Raman spectra in the lowest-temperature phase in the Li-doped material differ significantly from those at x = 0 and suggest a structural phase boundary at a Li concentration of less than 2%.
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78.30.Hv Other nonmetallic inorganics
61.72.up Other materials
64.70.K- Solid-solid transitions

The radial distribution of defects in a percolation path

X. Li, C. H. Tung, and K. L. Pey

Appl. Phys. Lett. 93, 262902 (2008); http://dx.doi.org/10.1063/1.3056659 (3 pages) | Cited 12 times

Online Publication Date: 29 December 2008

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Our results show that the defect distribution within a nanometer size percolation path is nonuniform. The defects, which are shown as oxygen vacancies, spread out radially from the center of the percolation path. The conduction band edges of the defective oxide are lowered for 0.14–0.78 eV when the Si–O composition changes from SiO1.76 to SiO0.7.
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61.72.jd Vacancies
71.20.Ps Other inorganic compounds
77.22.Jp Dielectric breakdown and space-charge effects

Cation ordering in epitaxial lead zirconate titanate films

L. C. Zhang, A. L. Vasiliev, I. B. Misirlioglu, R. Ramesh, S. P. Alpay, and M. Aindow

Appl. Phys. Lett. 93, 262903 (2008); http://dx.doi.org/10.1063/1.3058755 (3 pages) | Cited 2 times

Online Publication Date: 29 December 2008

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Electron diffraction and atom location by channeling enhanced microanalysis were used to show that epitaxial PbZr0.2Ti0.8O3 films grown on (001) SrTiO3 substrates by pulsed laser deposition exhibit long-range order on the tetravalent cation sublattice parallel to the film/substrate interface. This ordering gives two distinct tetravalent cation sites, one Zr lean and one Zr rich, and results in a superlattice with a tetragonal unit cell with lattice parameters a0 ≈ √2aPZT and c0 ≈ aPZT. Since such ordered states are inherently unstable in homovalent perovskite solutions, it is inferred that the ordering arises in response to the lattice misfit and could constitute an additional relaxation mode.
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68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
82.80.-d Chemical analysis and related physical methods of analysis

Domain control in ferroelectric nanodots through surface charges

Jie Wang and Marc Kamlah

Appl. Phys. Lett. 93, 262904 (2008); http://dx.doi.org/10.1063/1.3058821 (3 pages) | Cited 8 times

Online Publication Date: 29 December 2008

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Stable polarization distributions of freestanding ferroelectric nanodots with different surface charges are investigated numerically using a phase field model. The out-of-plane components of polarizations are found to be proportional to the density of surface charge. When the density of surface charge exceeds a critical value, the in-plane components of polarizations disappear. It makes ferroelectric nanodots experience an unusual transition from a vortex state to a single-domain state. Simulation results also show that regular multidomain structures can be obtained by means of specified surface charges, which suggests a way to tailor the physical properties for specific applications.
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77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Crystal structure and multiferroic properties of Gd-substituted BiFeO3

V. A. Khomchenko, D. A. Kiselev, I. K. Bdikin, V. V. Shvartsman, P. Borisov, W. Kleemann, J. M. Vieira, and A. L. Kholkin

Appl. Phys. Lett. 93, 262905 (2008); http://dx.doi.org/10.1063/1.3058708 (3 pages) | Cited 32 times

Online Publication Date: 30 December 2008

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Room-temperature crystal structure, local ferroelectric, and magnetic properties of the Bi1−xGdxFeO3 (x = 0.1,0.2,0.3) polycrystalline samples have been investigated by x-ray diffraction, piezoresponse force microscopy, and magnetometry techniques. Performed measurements have revealed a sequence of the composition-driven structural phase transitions R3c→Pn21a (occurs at x ∼ 0.1) and Pn21a→Pnma (takes place within the concentrational range of 0.2<x<0.3). The latter structural transformation is attributed to the substitution-induced suppression of the polar displacements. Gd substitution has been shown to effectively induce the appearance of the spontaneous magnetization, thus indicating a promising way for improving multiferroic properties of antiferromagnetic BiFeO3.
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75.30.-m Intrinsic properties of magnetically ordered materials
77.80.-e Ferroelectricity and antiferroelectricity

Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors

Aiying Wu, Paula M. Vilarinho, Dong Wu, and Alexei Gruverman

Appl. Phys. Lett. 93, 262906 (2008); http://dx.doi.org/10.1063/1.3059566 (3 pages) | Cited 11 times

Online Publication Date: 31 December 2008

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Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1−x)O3 films by piezoresponse force microscopy is reported. In some grains polarization orients opposite to the external field in the presence of the applied field, while the rest of the film volume switches in a normal way. This effect is observed in thin film capacitors which excludes charge injection effect and spontaneous backswitching due the built-in field, which is the possible reason for this behavior. The abnormal switching behavior is attributed to the charge compensation effect at the boundaries of the grains with rhombohedral structure.
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77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
84.32.Tt Capacitors

Effect of Mo substitution on ferroelectric properties of Bi3.6Ho0.4Ti3O12 thin films prepared by sol-gel method

Dongyun Guo, Chuanbin Wang, Qiang Shen, Lianmeng Zhang, Meiya Li, and Jun Liu

Appl. Phys. Lett. 93, 262907 (2008); http://dx.doi.org/10.1063/1.3063121 (3 pages) | Cited 7 times

Online Publication Date: 31 December 2008

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The series of (Bi0.9Ho0.1)4−2x/3Ti3−xMoxO12 (BHTM) (x = 0, 0.9%, 1.5%, 3.0%, and 6.0%) thin films on Pt/Ti/SiO2/Si substrates is prepared by sol-gel method, and the effect of Mo content on the microstructure and ferroelectric properties of these films are investigated. When the Mo content is not excessive, the BHTM films consisted of the single phase of Bi-layered Aurivillius phase. The B-site substitution with high-valent cation of Mo6+, in Bi3.6Ho0.4Ti3O12 films, enhanced the 2Pr (remanent polarization) and reduced the 2Ec (coercive field) of these films. The BHTM thin film with x = 1.5% exhibited the best electrical properties with 2Pr of 48.4 μC/cm2, 2Ec of 263.5 kV/cm, dielectric constant of 391 (at 1 MHz), good insulting behavior, as well as the fatigue-free characteristic.
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77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
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