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21 Jul 2008

Volume 93, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 93, 031101 (2008); http://dx.doi.org/10.1063/1.2959092 (3 pages)

Di Xu, Kevin P. Chen, Kris Ohlinger, and Yuankun Lin
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Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors

Peizhen Yang, W. S. Lau, V. Ho, B. K. Lim, S. Y. Siah, and L. Chan

Appl. Phys. Lett. 93, 033501 (2008); http://dx.doi.org/10.1063/1.2952494 (3 pages) | Cited 2 times

Online Publication Date: 21 July 2008

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If the on current of p-channel metal-oxide semiconductor (PMOS) transistors fabricated on (100) silicon substrate can be easily increased by switching from ⟨110⟩ to ⟨100⟩ orientation because of faster hole transport in the “on state,” it is natural to expect that this switching can also increase the off current because of faster hole transport in the “off state.” Indeed we managed to observe this experimentally for relatively long PMOS transistors. In this letter, we will also show that there is an overall performance improvement in PMOS transistors despite the increase in both on current and off current.
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85.30.Tv Field effect devices

Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada

Appl. Phys. Lett. 93, 033502 (2008); http://dx.doi.org/10.1063/1.2955834 (3 pages) | Cited 10 times

Online Publication Date: 21 July 2008

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Current-injected 1.54 μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Sz Deposition technology

Reversible resistive switching behaviors in NiO nanowires

Sung In Kim, Jae Hak Lee, Young Wook Chang, Sung Sic Hwang, and Kyung-Hwa Yoo

Appl. Phys. Lett. 93, 033503 (2008); http://dx.doi.org/10.1063/1.2958234 (3 pages) | Cited 26 times

Online Publication Date: 21 July 2008

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We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-μm-long NiO nanowire device operates under 2.5 V and even a 25-μm-long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices.
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72.60.+g Mixed conductivity and conductivity transitions
73.63.Nm Quantum wires

Cylindrical cloak with axial permittivity/permeability spatially invariant

Yu Luo, Jingjing Zhang, Hongsheng Chen, Sheng Xi, and Bae-Ian Wu

Appl. Phys. Lett. 93, 033504 (2008); http://dx.doi.org/10.1063/1.2953433 (3 pages) | Cited 18 times

Online Publication Date: 22 July 2008

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In order to reduce the difficulties in the experimental realizations of the cloak but still keep good performance of invisibility, we proposed a perfect cylindrical invisibility cloak with spatially invariant axial material parameters. The advantage of this kind of cloak is that only ρ and φ components of μ (or ε) are spatially variant, which makes it possible to realize perfect invisibility with two-dimensional metamaterials. The effects of perturbations of the parameters on the performance of this cloak are quantitatively analyzed by scattering theory. Our work provides a simple and feasible solution to the experimental realization of cloaks with ideal parameters.
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77.22.Ch Permittivity (dielectric function)
42.25.Fx Diffraction and scattering

Noninvasive nuclear magnetic resonance profiling of painting layers

Federica Presciutti, Juan Perlo, Federico Casanova, Stefan Glöggler, Costanza Miliani, Bernhard Blümich, Brunetto Giovanni Brunetti, and Antonio Sgamellotti

Appl. Phys. Lett. 93, 033505 (2008); http://dx.doi.org/10.1063/1.2963026 (3 pages) | Cited 5 times

Online Publication Date: 22 July 2008

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In this work we demonstrate the potential of single-sided nuclear magnetic resonance (NMR) sensors to access deeper layers of paintings noninvasively by means of high-resolution depth profiles spanning several millimeters. The performance of the sensor in resolving painting structures was tested on models for which excellent agreement with microscopy techniques was obtained. The depth profiling NMR technique was used in situ to investigate old master paintings. The observation of differences in NMR relaxation times of tempera binders from these paintings and from artificially aged panels raises the possibility to differentiate between original and recently restored areas.
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76.60.Es Relaxation effects
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama

Appl. Phys. Lett. 93, 033506 (2008); http://dx.doi.org/10.1063/1.2959065 (3 pages) | Cited 62 times

Online Publication Date: 22 July 2008

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The dependence of the relationship between the reset current Ireset and the compliance current Icomp (Ireset-Icomp characteristic) of a Pt/NiOx/Pt structure on the parasitic capacitance between the Pt/NiOx/Pt structure and a current limiter C was measured for Icomp<1 mA. It was clarified that C deviated the Ireset-Icomp characteristic from the ideal linear relationship expected for C = 0 and Ireset saturated at higher Icomp for larger C. This is attributed to a transient current flowing through C when the forming or set transitions occurred. The relationship of Ireset ≈ Icomp was maintained down to Icomp = 150 μA in the 1T1R cell with very small C.
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84.30.Sk Pulse and digital circuits

Noise temperature and linewidth of high-temperature-superconducting heterodyne gigahertz oscillators

J. Du, J. C. Macfarlane, and L. Hao

Appl. Phys. Lett. 93, 033507 (2008); http://dx.doi.org/10.1063/1.2959187 (3 pages) | Cited 10 times

Online Publication Date: 22 July 2008

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A method for the generation of stable, widely tunable heterodyne oscillations by means of a high-temperature-superconducting resistive superconducting quantum interference device is described. The details of the fabrication techniques, electrical characteristics, operating temperatures and frequency range of 100 MHz–2 GHz, are reported. The noise temperatures of several devices, made and tested in different laboratories, are estimated and the linewidths of the heterodyne oscillations are compared with theoretical values.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
85.25.Cp Josephson devices
84.30.Ng Oscillators, pulse generators, and function generators

Nonlinear electric field tuning characteristics of yttrium iron garnet–lead zirconate titanate microwave resonators

Y. K. Fetisov and G. Srinivasan

Appl. Phys. Lett. 93, 033508 (2008); http://dx.doi.org/10.1063/1.2960353 (3 pages) | Cited 7 times

Online Publication Date: 22 July 2008

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This report is on hysteresis and switching associated with electric field (E) tuning of ferromagnetic resonance in a bilayer of yttrium iron garnet (YIG)-lead zirconate titanate (PZT). The tuning is facilitated by piezoelectricity of PZT and mechanical bonding with YIG. For E<2 kV/cm, the frequency shift δf is linear with E. For E<10 kV/cm a pronounced hysteresis is seen in δf versus E. For E>10 kV/cm, a butterflylike dependence of δf with an abrupt switch in the sign and magnitude of δf are measured. The observations are attributed to nonlinearities of the piezoelectric deformation.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Dd Connectors, relays, and switches
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
77.80.Fm Switching phenomena

Multigigabit 1.3 μm GaNAsSb/GaAs Photodetectors

S. Fedderwitz, A. Stöhr, S. F. Yoon, K. H. Tan, M. Weiß, W. K. Loke, A. Poloczek, S. Wicaksono, and D. Jäger

Appl. Phys. Lett. 93, 033509 (2008); http://dx.doi.org/10.1063/1.2960540 (3 pages)

Online Publication Date: 22 July 2008

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We report on the fabrication of high-speed GaNAsSb photodetector for multigigabit operation at 1.3 μm wavelength. The 2 μm thick bulk GaNAsSb photoabsorption layer contains 3.3% of N and 8% of Sb, resulting in optical band gap of ∼ 0.9 eV suitable for near infrared operation up to wavelengths of about 1380 nm. By using the bulk photoabsorption layer, we have fabricated GaNAsSb photodetector with high dc responsivity of 0.12 A/W at 1.3 μm wavelength. The photodetector exhibits 3 dB cutoff frequency at 1.3 μm wavelength of 4.5 GHz. Furthermore, 5 Gb/s fiber-optic transmission at 1.3 μm wavelength is demonstrated using the GaNAsSb photodetector.
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85.60.Gz Photodetectors (including infrared and CCD detectors)

Flexible high gain complementary inverter using n-ZnO and p-pentacene channels on polyethersulfone substrate

Min Suk Oh, Wonjun Choi, Kimoon Lee, D. K. Hwang, and Seongil Im

Appl. Phys. Lett. 93, 033510 (2008); http://dx.doi.org/10.1063/1.2956406 (3 pages) | Cited 12 times

Online Publication Date: 22 July 2008

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We report on the fabrication of complementary inverters that have ZnO and pentacene as n-type and p-type channels on a polyethersulfone substrate operating under 7 V. Patterned Al and AlOx thin film were deposited at room temperature on the plastic as a common gate electrode and dielectric, respectively. After initial gate instability between ZnO channel and AlOx dielectric was controlled, our n-type thin-film transistors (TFTs) displayed quite a similar drain current level to that of p-type TFTs. Our flexible complementary device showed much high voltage gain of ∼ 100 even under a bent condition (56 mm radius of curvature). Our complementary inverter also demonstrates a promising dynamic behavior of ∼ 20 ms.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

High density metal-insulator-metal capacitor based on ZrO2/Al2O3/ZrO2 laminate dielectric

Yung-Hsien Wu, Chien-Kang Kao, Bo-Yu Chen, Yuan-Sheng Lin, Ming-Yen Li, and Hsiao-Che Wu

Appl. Phys. Lett. 93, 033511 (2008); http://dx.doi.org/10.1063/1.2958238 (3 pages) | Cited 18 times

Online Publication Date: 22 July 2008

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The metal-insulator-metal (MIM) capacitor for analog and rf applications has been developed with ZrO2/Al2O3/ZrO2 laminate as the dielectric. The high capacitance density of 21.54 fF/μm2 can be achieved due to the tetragonal ZrO2 which makes the higher dielectric constant of 38.7. This MIM capacitor also demonstrates the quadratic voltage coefficient of 2443 ppm/V2 and the good leakage current of 2.11×10−6 A/cm2 at 2 V which is ascribed to the inserted Al2O3. Since the Schottky emission is suggested as the major dielectric conduction mechanism, a further reduced quadratic voltage coefficient and leakage characteristic can be realized by using a high work-function electrode. The combination of the promising electrical properties and the desirable process integration renders this structure highly suitable for advanced MIM capacitors.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

Negative-bias temperature instability induced electron trapping

J. P. Campbell, K. P. Cheung, J. S. Suehle, and A. Oates

Appl. Phys. Lett. 93, 033512 (2008); http://dx.doi.org/10.1063/1.2963368 (3 pages) | Cited 1 time

Online Publication Date: 23 July 2008

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Despite four decades of research, the physics responsible for the negative-bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole trapping/detrapping mechanism or a hydrogen depassivation mechanism. In this study, we present NBTI-induced changes in the peak transconductance which indicate the presence of a third mechanism involving electron trapping/detrapping. The presence of this electron trapping/detrapping component adds further complexity to the very complicated NBTI phenomenon.
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85.30.Tv Field effect devices

Control of threshold voltage in ZnO-based oxide thin film transistors

Jin-Seong Park, Jae Kyeong Jeong, Yeon-Gon Mo, Hye Dong Kim, and Chang-Jung Kim

Appl. Phys. Lett. 93, 033513 (2008); http://dx.doi.org/10.1063/1.2963978 (3 pages) | Cited 46 times

Online Publication Date: 23 July 2008

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We investigated the feasibility of controlling the threshold voltage (Vth) by adjusting the thickness of the active layer (tactive) rather than by conventional chemical doping in indium-gallium-zinc oxide (IGZO) transistors with an inverted staggered structure. The value of Vth of the IGZO transistor was linearly modulated from −15.3±1.6 to −0.1±0.21 V by reducing tactive without any significant change in the field-effect mobility (μFE), subthreshold gate swing, or Ion/off ratio. The free electron density extracted from the relationship between tactive and Vth was 1.9×1017 cm−3, which was consistent with the value of 1.5×1017 cm−3 obtained from the C-V measurement for the 30-nm-thick IGZO films. The slight increase in the μFE with increasing tactive, which was in contradiction with the behavior of the corresponding amorphous Si transistor, was explained by the anomalous behavior of the source/drain contact resistance.
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85.30.Tv Field effect devices

Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, and Filippo Fabbri

Appl. Phys. Lett. 93, 033514 (2008); http://dx.doi.org/10.1063/1.2960339 (3 pages) | Cited 9 times

Online Publication Date: 23 July 2008

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Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations [Si(g) 30° and C(g) 30° partials], with a stacking fault between them. The EBIC contrast of C(g) 30° partial is always several percent higher than that of Si(g) 30° partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak (417 nm) appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Electrostatically actuated silicon-based nanomechanical switch at room temperature

Diego N. Guerra, Matthias Imboden, and Pritiraj Mohanty

Appl. Phys. Lett. 93, 033515 (2008); http://dx.doi.org/10.1063/1.2964196 (3 pages) | Cited 11 times

Online Publication Date: 24 July 2008

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We demonstrate a silicon-based high-frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room-temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modulating the drive signal. This phase-modulated device can be used as a low-power, high-speed mechanical switch integrated on-chip with silicon circuitry.
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84.32.Dd Connectors, relays, and switches

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang

Appl. Phys. Lett. 93, 033516 (2008); http://dx.doi.org/10.1063/1.2956393 (3 pages) | Cited 39 times

Online Publication Date: 25 July 2008

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Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3/Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2 nm thick)/GGO(5 nm thick), a maximum drain current of 1.05 A/mm, a transconductance of 714 mS/mm, and a peak mobility of 1300 cm2/V s have been achieved, the highest ever reported for III-V inversion-channel devices of 1 μm gate length.
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85.30.Tv Field effect devices
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