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21 Jul 2008

Volume 93, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 93, 031101 (2008); http://dx.doi.org/10.1063/1.2959092 (3 pages)

Di Xu, Kevin P. Chen, Kris Ohlinger, and Yuankun Lin
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Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate

Dong Hun Kim, Nam Gyu Cho, Ho-Gi Kim, Hyun-Suk Kim, Jae-Min Hong, and Il-Doo Kim

Appl. Phys. Lett. 93, 032901 (2008); http://dx.doi.org/10.1063/1.2954014 (3 pages) | Cited 25 times

Online Publication Date: 21 July 2008

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The authors report on the dielectric and leakage current properties of room temperature grown MgO-Ba0.6Sr0.4TiO3 (MgO-BST) composite thin films to be utilized InGaZnO4 thin films transistors (TFTs) fabricated on a polyethylene terephthalate (PET) substrate. The InGaZnO4 TFTs with MgO-BST gate dielectrics exhibited low operation voltage of 4 V, high on/off current ratio of 4.13×106, and high field effect mobility of 10.86 cm2/V s. These results verify that a room temperature grown MgO-BST gate dielectric is a good candidate for producing high performance InGaZnO4 TFTs on plastic substrates.
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85.30.Tv Field effect devices

Dielectric and polarization experiments in high loss dielectrics: A word of caution

M. Maglione and M. A. Subramanian

Appl. Phys. Lett. 93, 032902 (2008); http://dx.doi.org/10.1063/1.2949752 (3 pages) | Cited 12 times

Online Publication Date: 21 July 2008

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The recent quest for improved functional materials like high permittivity dielectrics and/or multiferroics has triggered an intense wave of research. Many materials have been checked for their dielectric permittivity or their polarization state. In this report, we call for caution when samples are simultaneously displaying an insulating behavior and a defect-related conductivity. Many oxides containing mixed valent cations or oxygen vacancies fall into this category. In such cases, most of the standard experiments may result in an effective high dielectric permittivity, which may not be related to ferroelectric polarization. Here we list a few examples of possible discrepancies between measured parameters and their expected microscopic origin.
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77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.80.-e Ferroelectricity and antiferroelectricity
61.72.jd Vacancies
77.22.Ej Polarization and depolarization

Evolution of the neutron quasielastic scattering through the ferroelectric phase transition in 93%PbZn1/3Nb2/3O3–7%PbTiO3

G.-M. Rotaru, S. N. Gvasaliya, B. Roessli, S. Kojima, S. G. Lushnikov, and P. Günter

Appl. Phys. Lett. 93, 032903 (2008); http://dx.doi.org/10.1063/1.2963474 (3 pages) | Cited 3 times

Online Publication Date: 23 July 2008

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We show that the neutron diffuse scattering in relaxor ferroelectric (1−x)PZN−xPT (x = 0.07) consists of two components. The first component is strictly elastic but extended in q-space and grows below 600 K. The second component, which was not reported before for the (1−x)PZN−xPT relaxor ferroelectrics, is quasielastic with a linewidth that has a similar temperature dependence as the width of the central peak observed by Brillouin spectroscopy. The temperature dependence of the susceptibility of the quasielastic scattering has a maximum at the ferroelectric transition.
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77.80.B- Phase transitions and Curie point
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Ferroelectric polarization and piezoelectric properties of layer-structured K0.5Bi4.5Ti4O15 single crystals

Yuji Noguchi, Muneyasu Suzuki, Yuuki Kitanaka, Shunsuke Teranishi, and Masaru Miyayama

Appl. Phys. Lett. 93, 032904 (2008); http://dx.doi.org/10.1063/1.2956397 (3 pages) | Cited 12 times

Online Publication Date: 24 July 2008

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Single crystals of ferroelectric K0.5Bi4.5Ti4O15 with a Bi-layered structure were grown by the flux method, and the properties of polarization hysteresis, piezoelectric strain, and leakage current were investigated along the polar a axis at 25 °C. K0.5Bi4.5Ti4O15 crystals exhibited a large remanent polarization of 31 μC/cm2, which suggests that K0.5Bi4.5Ti4O15 has the largest spontaneous polarization among Bi layer-structured ferroelectrics with four TiO6 layers in the perovskite blocks. Strain measurements showed that the piezoelectric strain constant was 31 pm/V.
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77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
81.10.Dn Growth from solutions

Epitaxy of single crystalline PrO2 films on Si(111)

T. Weisemoeller, C. Deiter, F. Bertram, S. Gevers, A. Giussani, P. Zaumseil, T. Schroeder, and J. Wollschläger

Appl. Phys. Lett. 93, 032905 (2008); http://dx.doi.org/10.1063/1.2958227 (3 pages) | Cited 13 times

Online Publication Date: 24 July 2008

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A film of praseodymium sesquioxide with hexagonal structure, that has been deposited on Si(111) by molecular beam epitaxy, was annealed in oxygen atmosphere to obtain a PrO2 film for improved heteroepitaxy as buffer dielectric for alternative semiconductor layer integration. The film structure is characterized by x-ray diffraction and x-ray reflectometry. The film is single crystalline with Fmmathm (fluorite) structure. It is B oriented with respect to Si and has lattice constants close to bulk PrO2. The cubic lattice of the PrO2 film is slightly distorted due to residual oxygen vacancies which increase the diameter of Pr ions.
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68.55.-a Thin film structure and morphology
68.55.J- Morphology of films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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